C23C14/046

FABRICATION OF LOW DEFECTIVITY ELECTROCHROMIC DEVICES

Prior electrochromic devices frequently suffer from high levels of defectivity. The defects may be manifest as pin holes or spots where the electrochromic transition is impaired. This is unacceptable for many applications such as electrochromic architectural glass. Improved electrochromic devices with low defectivity can be fabricated by depositing certain layered components of the electrochromic device in a single integrated deposition system. While these layers are being deposited and/or treated on a substrate, for example a glass window, the substrate never leaves a controlled ambient environment, for example a low pressure controlled atmosphere having very low levels of particles. These layers may be deposited using physical vapor deposition.

Apparatus for depositing metal film on surface of three-dimensional object
11255014 · 2022-02-22 · ·

An apparatus for depositing a metal film on a surface of a three-dimensional object, includes a mounting drum rotatably disposed inside a chamber and having a circumferential surface onto which a plurality of three-dimensional objects is settled and mounted making each surface thereof to be subjected to deposition be exposed to an outside; and at least one source target depositing a metal film onto the surface of the three-dimensional object mounted to the mounting drum by sputtering.

REFRIGERATOR AND REFRIGERATOR MANUFACTURING METHOD
20170292772 · 2017-10-12 ·

Embodiments of the present invention disclose a refrigerator having a main body including a storage space, a door coupled to the main body, and a glass film member covering at least a portion of a front surface of the door. The glass film member includes a glass panel, a protection layer bonded onto the glass panel, a film bonded to the protection layer, the film including a transparent film layer having a pattern formed on a surface thereof, a metal deposition layer deposited on the transparent film layer, and a coating layer coated on the transparent film layer.

Methods Of Forming Metal Chalcogenide Pillars

Methods of producing a self-aligned structure comprising a metal chalcogenide are described. Some methods comprise forming a metal-containing film in a substrate feature and exposing the metal-containing film to a chalogen precursor to form a self-aligned structure comprising a metal chalcogenide. Some methods comprise forming a metal-containing film in a substrate feature, expanding the metal-containing film to form a pillar and exposing the pillar to a chalogen precursor to form a self-aligned structure comprising a metal chalcogenide. Some methods comprise directly forming a metal chalcogenide pillar in a substrate feature to form a self-aligned structure comprising a metal chalcogenide. Methods of forming self-aligned vias are also described.

INTERPOSER, SEMICONDUCTOR PACKAGE, AND METHOD OF FABRICATING INTERPOSER
20170330767 · 2017-11-16 ·

A method of fabricating an interposer includes: providing a carrier substrate; forming a unit redistribution layer on the carrier substrate, the unit redistribution layer including a conductive via plug and a conductive redistribution line; and removing the carrier substrate from the unit redistribution layer. The formation of the unit redistribution layer includes: forming a first photosensitive pattern layer including a first via hole pattern; forming a second photosensitive pattern layer including a second via hole pattern and a redistribution pattern on the first photosensitive pattern layer; at least partially filling insides of the first via hole pattern, the second via hole pattern, and the redistribution pattern with a conductive material; and performing planarization to make a top surface of the unit redistribution layer flat. According to the method, no undercut occurs under a conductive structure and there are no bubbles between adjacent conductive structures, thus device reliability is enhanced and pattern accuracy is realized.

Process for manufacturing an electrically conductive member for an electronic component comprising an end equipped with a cavity

This process for manufacturing an electrically conductive member for an electronic component comprises the following steps: providing a structure comprising at least one blind hole having a bottom and at least one internal lateral flank connected to said bottom via a base of said lateral flank; forming the member, this forming step comprising a step of growing an electrically conductive material in order to form at least one portion of the member in the blind hole, said growth being faster at the base of the lateral flank of the blind hole than on the rest of said lateral flank, said member when formed comprising a cavity arranged at that end of said member which is located opposite the bottom of the blind hole, said cavity being entirely or partially bordered by a rim.

LOCAL METALLIZATION FOR SEMICONDUCTOR SUBSTRATES USING A LASER BEAM

Local metallization of semiconductor substrates using a laser beam, and the resulting structures, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. For example, a solar cell includes a substrate and a plurality of semiconductor regions disposed in or above the substrate. A plurality of conductive contact structures is electrically connected to the plurality of semiconductor regions. Each conductive contact structure includes a locally deposited metal portion disposed in contact with a corresponding a semiconductor region.

Ionized Physical Vapor Deposition (IPVD) Apparatus And Method For An Inductively Coupled Plasma Sweeping Source
20170278686 · 2017-09-28 ·

Embodiments of methods and systems for an inductively coupled plasma sweeping source for an IPVD system. In an embodiment, a method includes providing a large size substrate in a processing chamber. The method may also include generating from a metal source a sputtered metal onto the substrate. Additionally, the method may include creating a high density plasma from a high density plasma source and applying the high density plasma in a sweeping operation without involving moving parts. The method may also include controlling a plurality of operating variables in order to meet one or more plasma processing objectives.

Method and apparatus for producing diffusion aluminide coatings

A method for applying an aluminide coating includes applying an aluminum-based slurry onto an elongated member. The elongate member is introduced through an opening of a component and positioned within a cavity of the component at a location that is spaced apart from the internal surfaces of the component. Heat is applied to generate vaporized aluminum which diffuses into the internal surfaces of the component. Aluminum reacts with the internal surfaces to form an aluminide coating.

3D DIFFRACTION COATING PROCESS
20170320772 · 2017-11-09 ·

The present invention discloses a 3D diffraction coating process, the operation is simple, due to the principle of newton's rings of single light sources, superimposition of optical wave-wavlet vibration during wave transmission of light and diffraction, refraction, reflection, transmission, transmission increase and reflection increase of the light, slit diffraction generated by a round hole, a rectangular hole and a line in a pattern internally coated in the product is conducted to an outer glass layer to form a diffraction layer, and finally, a muitilayered 3D visual effect is generated, and the manufactured finished product has a good 3D effect, and is very exquisite and high-class.