C23C14/046

COATING OF NANO-SCALED CAVITIES
20220025520 · 2022-01-27 ·

Methods, systems, and apparatus for coating the internal surface of nano-scale cavities on a substrate are contemplated. A first fluid of high wettability is applied to the nano-scale cavity, filling the cavity. A second fluid carrying a conductor or a catalyst is applied over the opening of the nano-scale cavity. The second fluid has a lower vapor pressure than the first fluid. The first fluid is converted to a gas, for example by heating the substrate. The gas exits the nano-scale cavity, creating a negative pressure or vacuum in the nano-scale cavity. The negative pressure draws the second fluid into the nano-scale cavity. The conductor is deposited on the interior surface of the nano-scale cavity, preferably less than 10 nm thick.

Methods of forming metal chalcogenide pillars

Methods of producing a self-aligned structure comprising a metal chalcogenide are described. Some methods comprise forming a metal-containing film in a substrate feature and exposing the metal-containing film to a chalogen precursor to form a self-aligned structure comprising a metal chalcogenide. Some methods comprise forming a metal-containing film in a substrate feature, expanding the metal-containing film to form a pillar and exposing the pillar to a chalogen precursor to form a self-aligned structure comprising a metal chalcogenide. Some methods comprise directly forming a metal chalcogenide pillar in a substrate feature to form a self-aligned structure comprising a metal chalcogenide. Methods of forming self-aligned vias are also described.

Process for making alkali metal vapor cells

Making alkali metal vapor cells includes: providing a preform wafer that includes cell cavities in a cavity layer; providing a sealing wafer having a cover layer and transmission apertures; disposing a deposition assembly on the sealing wafer; disposing an alkali metal precursor in the deposition assembly; disposing the sealing wafer on the preform wafer; aligning the transmission apertures with the cell cavities; subjecting the alkali metal precursor to a reaction stimulus; producing alkali metal vapor in the deposition assembly; communicating the alkali metal vapor to the cell cavities; receiving, in the cell cavities, the alkali metal vapor from the transmission apertures; producing an alkali metal condensate in the cell cavity; moving the sealing wafer such that the cover layer encapsulates the alkali metal condensate in the cell cavities; and bonding the sealing wafer to the preform wafer to make individually sealed alkali metal vapor cells in the preform wafer.

Methods and apparatus for semi-dynamic bottom up reflow

A method of filling structures on a substrate uses a semi-dynamic reflow process. The method may include depositing a metallic material on the substrate at a first temperature, heating the substrate to a second temperature higher than the first temperature wherein heating of the substrate causes a static reflow of the deposited metallic material on the substrate, stopping heating of the substrate, and depositing additional metallic material on the substrate causing a dynamic reflow of the deposited additional metallic material on the substrate. RF bias power may be applied during the dynamic reflow to facilitate in maintaining the temperature of the substrate.

Method for preparing carbon nanotube/polymer composite
11167991 · 2021-11-09 · ·

Provided is a method for preparing a carbon nanotube/polymer composite material, including: coating a nano-silicon oxide film on the surface of a porous polymer by vacuum coating; depositing a metal catalyst nano-film on the nano-silicon oxide film by vacuum sputtering; growing a carbon nanotube array in situ on the surface of the porous polymer by plasma enhanced chemical vapor deposition to obtain a carbon nanotube/polymer porous material; and impregnating the carbon nanotube/polymer porous material with a polymer and curing to obtain the carbon nanotube/polymer composite material. By using a heat-resistant polymer having a high heat-resistant temperature and a PECVD technique, a carbon nanotube array directly grows in situ on the surface of a polymer at a low temperature, which thereby overcomes the defects of the composites previously prepared, in which carbon nanotubes are difficult to be homogeneously dispersed and the interfacial bonding force in the composites is weak.

Nanoparticle coater

A nanoparticle coater includes a housing; a nanoparticle discharge slot; a first combustion slot; and a second combustion slot.

Arrangement for coating substrate surfaces by means of electric arc discharge

The invention relates to an arrangement for coating substrate surfaces by means of electric arc discharge in a vacuum chamber, wherein electric arc discharges between a target (1) which is electrically connected as a cathode and is formed from a metal material are used. Arranged at a distance from the target (1) is an anode (2), with which the electric arc discharges are ignited to form a plasma formed with metal material of the target (1). The target (1) is connected to a first electric power source (3) and the anode (2) to a second electric power source (4), wherein the absolute values of the electric voltages connected to the target (1) and to the anode (2) different from one another.

SEPARATOR AND METHOD FOR MANUFACTURING SEPARATOR

Provided are a low-price fuel cell separator with high corrosion resistance and a method for manufacturing the separator. The present disclosure relates to a fuel cell separator including a metal substrate and a titanium layer containing titanium formed on the metal substrate, and a method for manufacturing the separator. A ratio of a (100) plane to a sum of values obtained by dividing peak intensities of the (100) plane, a (002) plane, and a (101) plane derived from titanium in an X-ray diffraction analysis of a separator surface by respective relative intensities is a constant value or more.

Replacement gate formation with angled etch and deposition

Methods herein may include forming a gate dielectric within a set of trenches in a stack of layers. A first work function (WF) metal may be formed atop the gate dielectric, and a capping layer may be formed over the first WF metal using an angled ion implant deposition, the capping layer extending across the trenches.

Methods for reducing material overhang in a feature of a substrate

Embodiments of methods for depositing material in features of a substrate have been provided herein. In some embodiments, a method for depositing material in a feature of a substrate includes depositing a material in a feature of a substrate disposed in a process chamber by sputtering a target using a plasma formed from a first gas; and etching the deposited material in the process chamber using a plasma formed from a second gas, different than the first gas, to at least partially reduce overhang of the material in the feature, wherein an atomic mass of the second gas is greater than an atomic mass of the first gas.