A method may include providing a set of features in a mask layer, wherein a given feature comprises a first dimension along a first direction, second dimension along a second direction, orthogonal to the first direction, and directing an angled ion beam to a first side region of the set of features in a first exposure, wherein the first side region is etched a first amount along the first direction. The method may include directing an angled deposition beam to a second side region of the set of features in a second exposure, wherein a protective layer is formed on the second side region, the second side region being oriented perpendicularly with respect to the first side region. The method may include directing the angled ion beam to the first side region in a third exposure, wherein the first side region is etched a second amount along the first direction.

The present disclosure enables high-resolution direct patterning of a material on a substrate by establishing and maintaining a separation between a shadow mask and a substrate based on the thickness of a plurality of standoffs. The standoffs function as a physical reference that, when in contact between the substrate and shadow mask determine the separation between them. Embodiments are described in which the standoffs are affixed to an element selected from the shadow mask, the substrate, the mask chuck, and the substrate chuck.

A ribbon beam plasma enhanced chemical vapor deposition (PECVD) system comprising a process chamber containing a platen for supporting a substrate, and a plasma source disposed adjacent the process chamber and adapted to produce free radicals in a plasma chamber, the plasma chamber having an aperture associated therewith for allowing a beam of the free radicals to exit the plasma chamber, wherein the process chamber is maintained at a first pressure and the plasma chamber is maintained at a second pressure greater than the first pressure for driving the free radicals from the plasma chamber into the process chamber.

A method may include providing a set of features in a mask layer, wherein a given feature comprises a first dimension along a first direction, second dimension along a second direction, orthogonal to the first direction, and directing an angled ion beam to a first side region of the set of features in a first exposure, wherein the first side region is etched a first amount along the first direction. The method may include directing an angled deposition beam to a second side region of the set of features in a second exposure, wherein a protective layer is formed on the second side region, the second side region being oriented perpendicularly with respect to the first side region. The method may include directing the angled ion beam to the first side region in a third exposure, wherein the first side region is etched a second amount along the first direction.

The present disclosure relates to the field of vapor deposition technologies, and discloses a vapor deposition method. The vapor deposition method includes: applying an exciting acoustic wave to the target, such that particles in a predetermined location of the target break away from the target and adhere to a predetermined region of the substrate when an energy of the particles is higher than an energy required for the particles to break away from the target. By using the vapor deposition method, losses of vapor deposition materials may be avoided, utilization of the vapor deposition materials may be increased, and thus costs may be reduced.

Energy bands of a thin film containing molecular clusters are tuned by controlling the size and the charge of the clusters during thin film deposition. Using atomic layer deposition, an ionic cluster film is formed in the gate region of a nanometer-scale transistor to adjust the threshold voltage, and a neutral cluster film is formed in the source and drain regions to adjust contact resistance. A work function semiconductor material such as a silver bromide or a lanthanum oxide is deposited so as to include clusters of different sizes such as dimers, trimers, and tetramers, formed from isolated monomers. A type of Atomic Layer Deposition system is used to deposit on semiconductor wafers molecular clusters to form thin film junctions having selected energy gaps. A beam of ions contains different ionic clusters which are then selected for deposition by passing the beam through a filter in which different apertures select clusters based on size and orientation.

There are provided a vapor deposition mask capable of satisfying both high definition and lightweight in upsizing and forming a vapor deposition pattern with high definition while securing strength, a vapor deposition mask preparation body capable of simply producing the vapor deposition mask and a method for producing a vapor deposition mask, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition. A metal mask 10 in which a slit 15 is provided and a resin mask 20 in which openings 25 corresponding to a pattern to be produced by vapor deposition are provided at a position of overlapping with the slit 15 are stacked, and the metal mask 10 has a general region 10a in which the slit 15 is provided and a thick region 10b larger in thickness than the general region.

A deposition method is provided wherein a donor substrate (10) is arranged opposite a target substrate (20), the donor substrate having a surface (12) facing the target substrate that is provided with a viscous donor material (14). An optical beam (30) is directed via the donor substrate to the donor material so as to release the donor material and to therewith transfer the donor material as a jet towards the target substrate. In the method provided herein an input signal (D.sub.S) is received that specifies a shape to be assumed by the jet with which the donor material is to be transferred and an energy profile of the optical beam is accordingly controlled. Additionally or alternatively the energy profile of the optical beam may be controlled in accordance with a pattern according to which the donor material is to be deposited on the target substrate. Likewise a corresponding deposition apparatus is provided.

An ultra-fine pattern deposition apparatus can include a base substrate; a photothermal converter disposed on or in the base substrate and configured to convert optical energy into thermal energy; a source part disposed on the photothermal converter; and a light reflector configured to reflect light based on a refractive index difference between the light reflector and the base substrate, and guide a source material emitted from the source part to a target region based on an opening in the light reflector and the photothermal converter being heated with the thermal energy from the photothermal converter, in which the opening in the light reflector includes a laterally recessed lower part and an upper part protruded from the laterally recessed lower part, and the laterally recessed lower part is between the upper part and the base substrate, and the photothermal converter is disposed between base substrate and the source part.

A method and apparatus for laser-induced forward transfer (LIFT) processing including a dynamic release mirror structure (DRMS) for desorbing delicate materials from a first surface and depositing a resultant formation of a portion of the materials on a second surface without damaging the material or coating the material with contaminants. The DRMS includes a lower-situated absorbing polymer layer on a transparent substrate. The lower-situated absorbing polymer layer is coated with a metal layer to reflect light of a laser pulse. The metal layer is topped by an upper-situated polymer cap layer. The 3-part layering of the metal layer sandwiched between the upper and lower polymer layers is variable in terms of materials and thickness to tune DRMS operational characteristics.