A biosensor component is provided that provides enhanced characteristics for use in biosensors, such as blood glucose sensors. The biosensor component comprises a substrate, a conductive layer deposited on the substrate, and a resistive material layer deposited on the conductive layer. The conductive layer includes nickel, chromium, and iron, such that a combined weight percent of the nickel and chromium in the conductive layer is in the range of 25 to less than 95 weight percent, the weight percent of nickel in the conductive layer is at least 4 weight percent, the weight percent of chromium in the conductive layer is at least 10 weight percent, the weight percent of iron in the conductive layer at least 2 weight percent, and such that the conductive layer comprises 0 to 20 weight percent molybdenum.

Artificial lift pump components such as couplings are disclosed, all having a body formed from a selected material, the body having an inner diameter and an outer diameter, a first surface treatment introducing carbon, nitrogen, boron into the material to form a first and hard layer, and a second layer defined as an deposited coating to the first layer that is also made of a carbon, nitrogen, or boron and is further characterized as being ceramic like (hard) and having a low-friction.

A method of modifying a high-resistivity substrate so that the substrate may be electrostatically clamped to a chuck is disclosed. The bottom surface is implanted with a resistivity-reducing species. In this way, resistivity of the bottom surface of the substrate may be greatly reduced. In some embodiments, to implant the bottom surface, a coating is applied to the top surface. After application of the coating, the substrate is flipped so that the front surface contacts the top surface of the chuck.

The ions are then implanted into the exposed bottom surface to create the low resistivity layer. The resistivity of the low resistivity layer proximate the bottom surface after implant may be less than 1000 ohm-cm. Once the bottom surface has been implanted, the substrate may be processed conventionally. The low resistivity layer may later be removed by wafer backside thinning processes.

Apparatus for depositing germanium and carbon onto one or more substrates comprises a vacuum chamber, at least first and second magnetron sputtering devices and at least one movable mount for supporting the one or more substrates within the vacuum chamber. The first magnetron sputtering device is configured to sputter germanium towards the at least one mount from a first sputtering target comprising germanium, thereby defining a germanium sputtering zone within the vacuum chamber. The second magnetron sputtering device is configured to sputter carbon towards the at least one mount from a second sputtering target comprising carbon, thereby defining a carbon sputtering zone within the vacuum chamber. The at least one mount and the at least first and second magnetron sputtering devices are arranged such that, when each substrate is moved through the germanium sputtering zone on the at least one movable mount, germanium is deposited on the said substrate, and when each substrate is moved through the carbon sputtering zone on the at least one movable mount, carbon is deposited on the said substrate.

A process for producing a highly conducting film of conductor-bonded graphene sheets that are highly oriented, comprising: (a) preparing a graphene dispersion or graphene oxide (GO) gel; (b) depositing the dispersion or gel onto a supporting solid substrate under a shear stress to form a wet layer; (c) drying the wet layer to form a dried layer having oriented graphene sheets or GO molecules with an inter-planar spacing d.sub.002 of 0.4 nm to 1.2 nm; (d) heat treating the dried layer at a temperature from 55° C. to 3,200° C. for a desired length of time to produce a porous graphitic film having pores and constituent graphene sheets or a 3D network of graphene pore walls having an inter-planar spacing d.sub.002 less than 0.4 nm; and (e) impregnating the porous graphitic film with a conductor material that bonds the constituent graphene sheets or graphene pore walls to form the conducting film.

A sliding element for an internal combustion engine may include a base material having an annular external surface. The external surface may include a bonding layer, a first layer of coating, and a second layer of coating sequentially disposed thereon. The first layer of coating and the second layer of coating may include hard amorphous carbon (DLC) of a combined matrix having a plurality of sp3/sp2 bonds. The first layer of coating may include 45% sp3 bonds or less and may have a thickness of at least 10 micrometers. The second layer of coating may include at least 55% sp3 bonds and may have a thickness of at least 3 micrometers.

An improved cathodic arc source and method of DLC film deposition with a carbon containing directional-jet plasma flow produced inside of cylindrical graphite cavity with depth of the cavity approximately equal to the cathode diameter. The generated carbon plasma expands through the orifice into ambient vacuum resulting in plasma flow strong self-constriction. The method represents a repetitive process that includes two steps: the described above plasma generation/deposition step that alternates with a recovery step. This step provides periodical removal of excessive amount of carbon accumulated on the cavity wall by motion of the cathode rod inside of the cavity in direction of the orifice. The cathode rod protrudes above the orifice, and moves back to the initial cathode tip position. The said steps periodically can be reproduced until the film with target thickness is deposited. Technical advantages include the film hardness, density, and transparency improvement, high reproducibility, long duration operation, and particulate reduction.

A method for preparing an optically transparent, superomniphobic coating on a substrate, such as an optical substrate, is disclosed. The method includes providing a glass layer disposed on a substrate, the glass layer having a first side adjacent the substrate and an opposed second side, the glass layer comprising 45-85 wt. % silicon oxide in a first glass phase and 10-40 wt. % boron oxide in a second glass phase, such that a glass layer has a composition in a spinodal decomposition region. The method further includes heating the second side of the glass layer to form a phase-separated portion of the layer, the phase-separated portion comprising an interpenetrating network of silicon oxide domains and boron oxide domains, and removing at least a portion of the boron oxide domains from the phase-separated portion to provide a graded layer disposed on the substrate. The graded layer has a first side disposed adjacent the substrate, the first side comprising 45-85 wt. % silicon oxide and 10-40 wt. % boron oxide, and opposite the first side, a porous second side comprising at least 45 wt. % silicon oxide and no more than 5 wt. % boron oxide.

A method of fabricating a carbon nanotube (“CNT”) array includes providing a substrate with a CNT catalyst disposed on a surface of the substrate, heating the CNT catalyst to an annealing temperature, exposing the CNT catalyst to a CNT precursor for an exposure period to pre-load the CNT catalyst, and exposing the pre-loaded CNT catalyst to a carbon source for a growth period to form the CNT array. The formed CNT array comprises a plurality of CNT bundles that are aligned with one another in an alignment direction. At least one of the plurality of bundles comprises an average structural factor of 1.5 or less along an entirety of the length thereof.

Provided is a carrier-attached metal foil which can suppress the number of foreign matter particles on the surface of a metal layer to enhance circuit formability, and can keep stable releasability even after heating at a high temperature of 240° C. or higher (for example, 260° C.) for a long period of time. The carrier-attached metal foil includes a carrier, a release functional layer provided on the carrier, the release functional layer including a metal oxynitride, and a metal layer provided on the release functional layer.