A surface coated cutting tool comprises: a tool substrate and a coating layer on a surface of the tool substrate; wherein the coating layer comprises a lower layer, an intermediate layer, and an upper layer, in sequence from the tool substrate toward the surface of the tool. The lower layer comprises an A layer having an average composition represented by formula: (Al.sub.1-xCr.sub.x)N, where x is 0.20 to 0.60; the intermediate layer comprises a B layer having an average composition represented by formula: (Al.sub.1-a-bCr.sub.aSi.sub.b)N, where a is 0.20 to 0.60 and b is 0.01 to 0.20; and the upper layer comprises a C layer having an average composition represented by formula: (Ti.sub.1-α-βSi.sub.αW.sub.β)N where α is 0.01 to 0.20 and β is 0.01 to 0.10; and the upper layer has a repeated variation in W level with an average interval of 1 nm to 100 nm between adjacent local maxima and minima.

A coated cutting tool comprises a substrate and a coating layer formed on a surface of the substrate, and has a rake face and a flank. The coating layer comprises an alternating laminate structure in which first compound layers containing AlN and second compound layers containing a compound are laminated in an alternating manner, the compound having a composition represented by formula (1) below:
(Ti.sub.1-xAl.sub.x)N  (1)
(wherein x satisfies 0.40≤x≤0.70). An average thickness T.sub.1 per first compound layer is 5 nm or more to 160 nm or less, and an average thickness T.sub.2 per second compound layer is 8 nm or more to 200 nm or less. A ratio of T.sub.1 to T.sub.2 is 0.10 or more to 0.80 or less. An average thickness T.sub.3 of the alternating laminate structure is 2.5 μm or more to 7.0 μm or less. A ratio (H/E) of hardness H to elastic modulus E is 0.065 or more to 0.085 or less at the rake face or the flank.

A surface-coated cutting tool including a tool substrate containing WC crystal grains and insulating grains, and a coating layer composed of a multiple nitride of Ti, Al, and V and disposed on the surface of the tool substrate. The multiple nitride is represented by a compositional formula: Ti.sub.aAl.sub.bV.sub.cN satisfying the following relations:
0.25≤a≤0.35,
0.64≤b≤0.74,
0<c≤0.06, and
a+b+c=1
wherein each of a, b, and c represents an atomic proportion. The coating layer is characterized by exhibiting a peak attributed to a hexagonal crystal phase and a peak attributed to a cubic crystal phase as observed through X-ray diffractometry.

Provided are a crack-free laminated film and a structure including this laminated film. This laminated film includes: a buffer layer; and at least one layer of gallium nitride base film disposed on the buffer layer. Moreover, the compression stress of the entire laminated film is −2.0 to 5.0 GPa.

The present disclosure provides a film forming method and an aluminum nitride film forming method for a semiconductor device. The film forming method for a semiconductor device includes performing multiple sputtering routes sequentially. Each sputtering routes includes: loading a substrate into a chamber; moving a shielding plate between a target and the substrate; introducing an inert gas into the chamber to perform a surface modification process on the target; performing a pre-sputtering to pre-treat a surface of the target; moving the shielding plate away from the substrate, and performing a main sputtering on the substrate to form a film on the substrate; and moving the substrate out of the chamber.

A chamber of a hybrid chemical and physical vapor deposition (HybCPVD) provides high-quality and uniform films on relatively large multiple wafers per growth run at reasonably high deposition rates using a scalable high-throughput process. Transition-metal-alloyed III-N single-crystalline and textured thin films are epitaxially and non-epitaxially deposited on a suitable substrate (of, for example, silicon or a metal such as aluminum or titanium) by providing a mixture of various gases in a deposition/growth chamber. The precursors for the chemical reactions include vapor phase of elements of transition metals, vapor phase of chlorides, and vapor phase of hydride. This growth technique provides high growth rate and high-quality epitaxial materials.

A cutting tool part includes a cutting portion. The cutting tool part further includes a plurality of guide pads projecting radially outwards from the cutting portion. At least the cutting portion and the plurality of guide pads are made through additive manufacturing, the plurality of guide pads being integrally formed with the cutting portion in a unitary one-piece construction. A rotary cutting tool is provided having a cutting insert releasably attached to the cutting tool part.

A piezoelectric member that achieves a high sound speed includes a silicon-containing substrate and a piezoelectric layer. The piezoelectric layer is disposed on the silicon-containing substrate. At least a surface layer of the piezoelectric layer on a side opposite to the silicon-containing substrate is made of B.sub.xAl.sub.1-xN (0<x≦0.2).

The present invention provides an epitaxial film forming method for epitaxially growing a high-quality group III nitride semiconductor thin film on an α-Al.sub.2O.sub.3 substrate by a sputtering method. In the epitaxial film forming method according to an embodiment of the present invention, when an epitaxial film of a group III nitride semiconductor thin film is to be formed on the α-Al.sub.2O.sub.3 substrate arranged on a substrate holder provided with a heater electrode and a bias electrode of a sputtering apparatus, in a state where the α-Al.sub.2O.sub.3 substrate is maintained at a predetermined temperature by the heater electrode, high-frequency power is applied to a target electrode and high-frequency bias power is applied to a bias electrode and at that time, the powers are applied so that frequency interference between the high-frequency power and the high-frequency bias power does not occur.

The present disclosure relates to the field of sensor manufacturing technology, particularly discloses a method for manufacturing a micro-sensor body, comprising the steps of S1: applying a wet colloidal material on a substrate to form a colloidal layer, and covering a layer of one-dimensional nanowire film on the surface of the colloidal layer to form a sensor embryo; S2: drying the colloidal layer of the sensor embryo to an extent that the colloidal layer cracks into a plurality of colloidal islands, a portion of the one-dimensional nanowire film contracting into a contraction diaphragm adhered to the surface of the colloidal islands while the other portion of the one-dimensional nanowire film being stretched into a connection structure connected between the adjacent contraction diaphragms. By the method for manufacturing a micro-sensor body of the present disclosure, the contraction diaphragms and connection structures formed by stretching the one-dimensional nanowire film are connected stably, which enhances the stability of the sensor devices; and the cracking manner renders it easy to obtain a large-scale of sensor bodies with connection structure arrays in stable suspension.