A composite diamond body includes a diamond base material and a stable layer disposed on the diamond base material. The stable layer may have a thickness of 0.001 μm or more and less than 10 μm, and may include a plurality of layers. A composite diamond tool includes the composite diamond body. There are thus provided highly wear-resistant composite diamond body and composite diamond tool that are even applicable to mirror-finish planarization of a workpiece which reacts with diamond to cause the diamond to wear.

A coated cutting tool comprises a substrate and a coating layer formed on a surface of the substrate, and has a rake face and a flank. The coating layer comprises an alternating laminate structure in which first compound layers containing AlN and second compound layers containing a compound are laminated in an alternating manner, the compound having a composition represented by formula (1) below:

(Ti.sub.1-xAl.sub.x)N  (1)

(wherein x satisfies 0.40≤x≤0.70). An average thickness T.sub.1 per first compound layer is 5 nm or more to 160 nm or less, and an average thickness T.sub.2 per second compound layer is 8 nm or more to 200 nm or less. A ratio of T.sub.1 to T.sub.2 is 0.10 or more to 0.80 or less. An average thickness T.sub.3 of the alternating laminate structure is 2.5 μm or more to 7.0 μm or less. A ratio (H/E) of hardness H to elastic modulus E is 0.065 or more to 0.085 or less at the rake face or the flank.

The present invention discloses a non-reactive PVD coating process for producing an aluminium-rich Al.sub.xTi.sub.1−xN-based thin film having an aluminium content of >75 at-% based on the total amount of aluminium and titanium in the thin film, a cubic crystal structure, and a columnar microstructure, wherein ceramic targets are used as a material source for the aluminium-rich Al.sub.xTi.sub.1−xN-based thin film.

A method to deposit a coating including a material with highly oriented microstructure, the method including at least the following sequence of process steps: providing a flat substrate into a first vacuum processing chamber; etching one surface of the substrate by physical vapor etching; depositing a first metallic layer on the etched substrate surface by sputtering in a first metal deposition step; annealing the first metallic layer at an annealing temperature at least 50° C. higher than a compound deposition temperature of the subsequent compound deposition step; depositing a first compound layer at the compound deposition temperature on the outer surface of the first metallic layer by reactive sputtering in a first compound deposition step; and depositing a second metallic layer on the outer surface of the first compound layer by sputtering in a second metal deposition step.

The object of the present invention is to provide a large-sized gallium nitride-based sintered body having a small oxygen amount and high strength, a large-sized gallium nitride-based sintered body having a small oxygen amount and containing a dopant, to obtain a highly crystalline gallium nitride thin film which has become a n-type or p-type semiconductor by a dopant, and methods for producing them.

A gallium nitride-based sintered body, which has an oxygen content of at most 1 atm % and an average particle size (D50) of at least 1 μm and at most 150 μm.

Provided are a substrate processing method and a substrate processing apparatus for forming a low-resistance metal-containing nitride film. The substrate processing method includes: a step of providing a substrate in a processing container; a step of forming a metal-containing nitride film on the substrate by repeating supplying an organic metal-containing gas and a nitrogen-containing gas alternately for a first predetermined number of cycles; a step of modifying the metal-containing nitride film by generating plasma in the processing container; and a step of repeating the step of forming the metal-containing nitride film and the step of modifying the metal-containing nitride film for a second predetermined number of cycles.

The present invention provides a method for in-situ etching of a wafer prior to physical vapor deposition, the method comprising the following steps. A sputtering chamber is provided, the sputtering chamber being collectively defined by a wafer handling apparatus and a magnetron. The wafer is placed into the sputtering chamber. A gas is introduced into the sputtering chamber such that the gas is separated into a plasma, wherein the plasma includes gas ions. A first negative potential is applied to the wafer using a wafer chuck of the wafer handling apparatus while a second negative potential is simultaneously applied to a sputtering target of the magnetron, wherein simultaneous application of the first negative potential to the wafer and the second negative potential to the sputtering target causes gas ions to eject material from the wafer and the sputtering target of the magnetron such that ejected material from the wafer and the sputtering target is collected onto a shield defined by the sputtering chamber.

A housing assembly (100) includes a substrate (110), a plastic member (120), and a covering layer (130). The substrate (110) has a display surface. A penetrating accommodation hole (112) is defined in the substrate (110), and an opening of the accommodation hole (112) is located on the display surface. The plastic member (120) is disposed in the accommodation hole (112) and fixedly connected to the substrate (110). The covering layer (130) covers an entirety of the display surface and shields the opening of the accommodation hole (112) located on the display surface.

Disclosed is a method for manufacturing a piezoelectric Al.sub.xGa.sub.1-xN (0.5≤x≤1) thin film, comprising: forming a stress control layer comprised of a Group III nitride on a silicon substrate by chemical vapor deposition (CVD); and depositing a piezoelectric Al.sub.xGa.sub.1-xN (0.5≤x≤1) thin film on the stress control layer, the thin film being deposited by PVD at 0.3 Tm (Tm is melting temperature of a piezoelectric thin film material) or higher. Further, a method for manufacturing a device in conjunction with piezoelectric Al.sub.xGa.sub.1-xN (0.5≤x≤1) thin films is provided.

Provided is a coated cutting tool, which includes a hard coating film containing a layer (b) formed of a nitride or a carbonitride, a layer (c) which is a layered coating film formed by alternately layering a nitride or carbonitride layer (c1) that contains 55 atom % or more and 75 atom % or less of Al, Cr having a second highest content percentage, and at least Si and a nitride or carbonitride layer (c2) that contains 55 atom % or more and 75 atom % or less of Al and Ti having a second highest content percentage, each layer having a film thickness of 50 nm or less, and a layer (d) that is a nitride or carbonitride that contains, with respect to a total amount of metal elements (including metalloid elements), 55 atom % or more and 75 atom % or less of Al, Cr having a second highest content percentage.