The present invention is related to a method of providing n-doped group III-V materials grown on (111) Si, and especially to a method comprising steps of growth of group III-V materials interleaved with steps of no growth, wherein both growth steps and no growth steps are subject to a constant uninterrupted arsenic flux concentration.

A substrate having a surface coated with a piezoelectric coating I, the coating including A-xMexN, wherein A is at least one of B, Al, Ga, In, Tl, and Me is at least one metallic element Me from the transition metal groups 3b, 4b, 5b 6b the lanthanides, and Mg the coating I having a thickness d, and further including a transition layer wherein the ratio of atomic percentage of Me to atomic percentage of Al steadily rises along a thickness extent δ3 of said coating for which there is valid:

δ3≤d.

A coated cutting tool includes a substrate having a coating including a layer of aluminium nitride, which has a phase of aluminium nitride (P). The phase of aluminium nitride (P) has an electron diffraction pattern, wherein up to a scattering vector of q=8.16 nm.sup.−1 there is at least one additional reflection (R) to any reflection found in the cubic and hexagonal aluminium nitride diffraction patterns.

At least one layer in a coating located on a surface of a substrate is a domain structure layer constituted of two or more domains different in composition and a thin layer located between the domains and being different in composition from each of the domains. The thin layer is located between any one domain and any another domain and in contact therewith. When the size of each of a plurality of first domains present in the domain structure layer is defined as a diameter of a virtual circumcircle in contact with each first domain, the average value of the size of each first domain is not smaller than 1 nm and not greater than 10 nm and a thickness of the thin layer in a direction of thickness of the domain structure layer is not less than 1 atomic layer and not more than 10 atomic layers.

Bulk acoustic wave resonator structures include a bulk layer with inclined c-axis hexagonal crystal structure piezoelectric material supported by a substrate. The bulk layer may be prepared without first depositing a seed layer on the substrate. The bulk material layer has a c-axis tilt of about 32 degrees or greater. The bulk material layer may exhibit a ratio of shear coupling to longitudinal coupling of 1.25 or greater during excitation. A method for preparing a crystalline bulk layer having a c-axis tilt includes depositing a bulk material layer directly onto a substrate at an off-normal incidence. The deposition conditions may include a pressure of less than 5 mTorr and a deposition angle of about 35 degrees to about 85 degrees.

A method of forming a piezoelectric thin film can be provided by heating a substrate in a process chamber to a temperature between about 350 degrees Centigrade and about 850 degrees Centigrade to provide a sputtering temperature of the substrate and sputtering a Group III element from a target in the process chamber onto the substrate at the sputtering temperature to provide the piezoelectric thin film including a nitride of the Group III element on the substrate to have a crystallinity of less than about 1.0 degree at Full Width Half Maximum (FWHM) to about 10 arcseconds at FWHM measured using X-ray diffraction (XRD).

A structure includes a substrate including a wafer or a portion thereof; and a piezoelectric bulk material layer comprising a first portion deposited onto the substrate and a second portion deposited onto the first portion, the second portion comprising an outer surface having a surface roughness (Ra) of 4.5 nm or less. Methods for depositing a piezoelectric bulk material layer include depositing a first portion of bulk layer material at a first incidence angle to achieve a predetermined c-axis tilt, and depositing a second portion of the bulk material layer onto the first portion at a second incidence angle that is smaller than the first incidence angle. The second portion has a second c-axis tilt that substantially aligns with the first c-axis tilt.

A molecular beam epitaxial growth apparatus of the present disclosure includes a stage, a first molecular beam source irradiates a substrate surface with a first molecular beam, a second molecular beam source irradiates the substrate surface with a second molecular beam, a shutter shields the first molecular beam or the second molecular beam, and a control unit controls the shutter and relative positions of the stage with respect to the first molecular beam source and the second molecular beam source. The radiation direction of the first molecular beam emitted from the first molecular beam source and the radiation direction of the second molecular beam emitted from the second molecular beam source are vertical to the substrate surface. Under the control of the control unit, the second molecular beam is shielded while the first molecular beam is radiated on the substrate surface, and the first molecular beam is shielded while the second molecular beam is radiated on the substrate surface.

Provided is a cemented carbide having superior wear resistance and fracture resistance. A cemented carbide containing 50.0 mass % or more and 94.5 mass % or less of tungsten carbide, 5.0 mass % or more and 12.0 mass % or less of Co, and 0.5 mass % or more and 4.0 mass % or less of Ru, the cemented carbide comprising a WC phase that includes tungsten carbide as a main component, and a binder phase that binds the WC phase, wherein the binder phase contains Co, the lattice constant of Co in the binder phase is 3.580 Å or more and 3.610 Å or less, and the saturation magnetization of the cemented carbide is 40% or more and 58% or less.

A method for marking a product (1) with a photoluminescent mark, said mark comprising a photoluminescent portion (10) which is transparent under normal light conditions and revealed by photoluminescence under UV illumination, said mark further comprising a non photoluminescent portion (9) which is transparent under normal light conditions as well s under UV illumination, said method comprising: deposing on said product a stack, said stack comprising alternatively layers (2,4) such as AlN, with a thickness of less than 1 micron and layers (3) of a second material, such as GaN with a thickness of less than 10 nm; raising the transparency of said non photoluminescent portion (10) with a deposition of transparent material (6) or incorporation of ions into said non photoluminescent portions.