A three-dimensional all-solid-state lithium ion batteries including a cathode protection layer, the battery including: a cathode including a plurality of plates which are vertically disposed on a cathode current collector; a cathode protection layer disposed on a surfaces of the cathode and the cathode current collector; a solid state electrolyte layer disposed on the cathode protection layer; an anode disposed on the solid state electrolyte layer; and an anode current collector disposed on the anode, wherein the cathode protection layer is between the cathode and the solid state electrolyte layer, and wherein the solid state electrolyte layer is between the cathode protection layer and the anode.

A coating comprising a bottom layer comprising a hard physical vapor deposition (PVD) coating applied to the end mill. The bottom layer has an edge-prep and polished top surface with reoriented cutting forces. The coating includes a top layer comprising a friction reducing coating applied to the top surface of the bottom layer to prevent or minimize titanium or titanium alloy adhesion to the end mill during milling operations of a metal object comprising the titanium or titanium alloy. The coating has a chemical composition which has inertness toward titanium or titanium alloy. A cutter tool and method are also provided.

Disclosed herein are a method of forming a transition metal dichalcogenide thin film and a method of manufacturing a device including the same. The method of forming a transition metal dichalcogenide thin film includes: depositing a transition metal dichalcogenide thin film on a substrate; and heat-treating the deposited transition metal dichalcogenide thin film.

A chalcogenide film is provided. The chalcogenide film includes a noble metal chalcogenide material having a formula MC.sub.x. M represents a noble metal. C represents a chalcogen. x is any one positive value equal to or more than 1.4 and less than 2. The chalcogenide film is configured to generate electrons and holes upon light incident on the chalcogenide film.

In one embodiment, a physical vapor deposition device includes a phase change material sputtering target includes a primary matrix and at least one additional phase. The primary matrix includes at least one element from Group VI of the periodic table excluding oxygen and one or more elements from Group IV or Group V of the periodic table. The additional phase is substantially homogenously dispersed in the primary matrix.

A deposition chamber includes a chamber wall, an optically transparent rod which extends through an aperture in the wall, such that a first end of the rod is exposed inside of the deposition chamber and an opposing second end of the rod is exposed outside of the deposition chamber, a compression collar which is selectively attached to an outer surface of the wall, such that the collar surrounds the second end of the rod, and a gasket disposed around the rod and compressed by the compression collar, such that the gasket secures the rod in the aperture and generates an air-tight seal.

SbTe-based alloy sintered sputtering target having a Sb content of 10 to 60 at %, a Te content of 20 to 60 at %, and remainder being one or more types of elements selected from Ag, In, and Ge and unavoidable impurities, wherein an average grain size of oxides is 0.5 m or less. An object of this invention is to improve the texture of the SbTe-based alloy sintered sputtering target in order to prevent the generation of arcing during sputtering and improve the thermal stability of the sputtered film.

A three-dimensional all-solid-state lithium ion batteries including a cathode protection layer, the battery including: a cathode including a plurality of plates which are vertically disposed on a cathode current collector; a cathode protection layer disposed on a surfaces of the cathode and the cathode current collector; a solid state electrolyte layer disposed on the cathode protection layer; an anode disposed on the solid state electrolyte layer; and an anode current collector disposed on the anode, wherein the cathode protection layer is between the cathode and the solid state electrolyte layer, and wherein the solid state electrolyte layer is between the cathode protection layer and the anode.

There is a method for forming an oxide or chalcogenide 2D semiconductor. The method includes a step of growing on a substrate, by a deposition method, a precursor epitaxy oxide or chalcogenide film; and a step of sulfurizing the precursor epitaxy oxide or chalcogenide film, by replacing the oxygen atoms with sulfur atoms, to obtain the oxide or chalcogenide 2D semiconductor. The oxide or chalcogenide 2D semiconductor has an epitaxy structure inherent from the precursor epitaxy oxide or chalcogenide film.

Disclosed is a CuO/Se composite film, in which Se with low melting point (221 C.) and strong photosensitivity is introduced into CuO, providing the film with fewer defects and excellent optical, electrical and photoelectric properties. In the preparation method of the invention, Se is introduced into CuO and melted by low-temperature annealing, and then the molten Se can infiltrate CuO to eliminate or reduce defects in the CuO film such as voids and dangling bonds, thereby improving optical, electrical and photoelectric properties of the film and overcoming the shortcomings that CuO has poor crystallinity, high melting point and is decomposed at a high temperature.