The present invention provides a colored radiative cooler based on a Tamm structure, including a substrate on which metal film and dielectric layers A to G are sequentially provided from bottom to top, where the Tamm structure is formed from the metal film and the dielectric layers A to D; a distributed Bragg reflector is formed from the dielectric layers A to D; and a selective emitter is formed from the dielectric layers E to G. Compared to the conventional radiative cooler, the colored radiative cooler not only has better cooling performance, but it has a wide applications in many aspects such as aesthetics and decoration.

The disclosure provides an anti-corrosion conductive film and methods of making and using thereof. The anti-corrosion conductive film is formed by sequentially forming an anti-corrosion protective layer, a stress transition layer and a conducting layer on the surface of a substrate by deposition through a high-low pulse bias alternation method. The anti-corrosion conductive film is a nano-multilayer anti-corrosion conductive film exhibiting excellent corrosion resistance and conductivity. The anti-corrosion conductive film has great application prospects in the fields of metal polar plates of fuel cells, ground grid equipment of power transmission lines, and the like.

Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 10.sup.8 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

A coated cutting tool includes a substrate of cemented carbide, cubic boron nitride (cBN) or cermet containing tungsten carbide hard grains and a tungsten carbide (WC) layer deposited immediately on top of the substrate surface. The tungsten carbide (WC) layer is a mixture or combination of hexagonal tungsten mono-carbide α-WC phase and cubic tungsten mono-carbide β-WC phase and unavoidable impurities.

A surface coated cutting tool comprises: a tool substrate and a coating layer on a surface of the tool substrate; wherein the coating layer comprises a lower layer, an intermediate layer, and an upper layer, in sequence from the tool substrate toward the surface of the tool. The lower layer comprises an A layer having an average composition represented by formula: (Al.sub.1-xCr.sub.x)N, where x is 0.20 to 0.60; the intermediate layer comprises a B layer having an average composition represented by formula: (Al.sub.1-a-bCr.sub.aSi.sub.b)N, where a is 0.20 to 0.60 and b is 0.01 to 0.20; and the upper layer comprises a C layer having an average composition represented by formula: (Ti.sub.1-α-βSi.sub.αW.sub.β)N where α is 0.01 to 0.20 and β is 0.01 to 0.10; and the upper layer has a repeated variation in W level with an average interval of 1 nm to 100 nm between adjacent local maxima and minima.

The present invention relates to an antimicrobial plastic film and a winding coating method, the antimicrobial plastic film includes a plastic film main part, wherein a surface of said plastic film main part is coated with an antimicrobial coating, the antimicrobial coating includes a bonding layer, a carrier layer, a first antimicrobial layer and a second antimicrobial layer, the winding coating method includes the steps of vacuum treatment , applying a bonding layer, applying a carrier layer, applying a first antimicrobial layer, and applying a second antimicrobial layer

A coated part includes a metallic substrate, a thermal barrier comprising a ceramic material and covering the metallic substrate, wherein the coated part further includes a protective coating covering the thermal barrier, the protective coating including, in a first region, a first MAX phase, denoted PZ2, of formula (Zr.sub.xTi.sub.1-x,).sub.2AlC or a first MAX phase, denoted PC2, of formula (Cr.sub.xTi.sub.1-x,).sub.2AlC with x non-zero and less than or equal to 1 in the MAX phases PZ2 and PC2, and the protective coating includes, in a second region covering the first region, a second MAX phase of formula Ti.sub.2AlC.

A part is adapted to be used in a semiconductor processing equipment. The part includes a substrate and a protective coating. The protective coating covers at least a part of the substrate, is made of silicon carbide, and has an atomic ratio of carbon in the protective coating increases in a direction away from the substrate while an atomic ratio of silicon in the protective coating decreases in the direction. The atomic ratio of silicon in the protective coating is larger than that of the carbon near the substrate, and the atomic ratio of silicon in the protective coating is smaller than that of carbon near the outer surface of the protective coating. A method for making the part is also provided.

Apparatus for depositing germanium and carbon onto one or more substrates comprises a vacuum chamber, at least first and second magnetron sputtering devices and at least one movable mount for supporting the one or more substrates within the vacuum chamber. The first magnetron sputtering device is configured to sputter germanium towards the at least one mount from a first sputtering target comprising germanium, thereby defining a germanium sputtering zone within the vacuum chamber. The second magnetron sputtering device is configured to sputter carbon towards the at least one mount from a second sputtering target comprising carbon, thereby defining a carbon sputtering zone within the vacuum chamber. The at least one mount and the at least first and second magnetron sputtering devices are arranged such that, when each substrate is moved through the germanium sputtering zone on the at least one movable mount, germanium is deposited on the said substrate, and when each substrate is moved through the carbon sputtering zone on the at least one movable mount, carbon is deposited on the said substrate.

Provided is a cutting tool that can have a long tool life even when used to cut soft metals in particular. The cutting tool comprises a base body and a hard carbon film arranged on the base body, the hard carbon film includes an amorphous phase and a graphite phase, the density of the hard carbon film is no less than 2.5 g/cm.sup.3 and no more than 3.5 g/cm.sup.3, the degree of crystallinity of the hard carbon film is no more than 6.5%, and the average coordination number of the amorphous phase is no less than 2.5 and no more than 4.