A decorative member including: a color developing layer including a light reflective layer and a light absorbing layer provided on the light reflective layer; and a substrate provided on one surface of the color developing layer. The light absorbing layer includes a copper oxynitride (Cu.sub.aO.sub.bN.sub.c).

Provided are a metal nitride material for a thermistor, which has a high heat resistance and a high reliability and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: V.sub.xAl.sub.y(N.sub.1-wO.sub.w).sub.z (where 0.70≦y/(x+y)≦0.98, 0.45≦z≦0.55, 0<w≦0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. The method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using a V—Al alloy sputtering target.

A conductive laminate for a touch panel including a substrate which is light-transmitting, an underlayer which is light-transmitting and formed on at least one surface of the substrate, a first copper oxynitride layer formed on the underlayer on an opposite side of the substrate, a copper layer formed on the first copper oxynitride layer on an opposite side of the underlayer, and a second copper oxynitride layer formed on the copper layer on an opposite side of the first copper oxynitride layer.

A novel oxide semiconductor, a novel oxynitride semiconductor, a transistor including them, or a novel sputtering target is provided. A composite target includes a first region and a second region. The first region includes an insulating material and the second region includes a conductive material. The first region and the second region each include a microcrystal whose diameter is greater than or equal to 0.5 nm and less than or equal to 3 nm or a value in the neighborhood thereof. A semiconductor film is formed using the composite target.

A decoration member including: a color developing layer including a light reflective layer and a light absorbing layer provided on the light reflective layer; and a substrate provided on one surface of the color developing layer. The substrate includes a pattern layer, and the light absorbing layer includes silicon (Si).

A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.

The invention relates to a coating comprising at least one molybdenum-containing layer having molybdenum oxide, said molybdenum being essentially molybdenum monoxide. The invention further relates to a PVD process for producing the disclosed coating, in which the layer comprising the molybdenum monoxide is produced using arc evaporation. The invention also relates to a component that has said coating.

Methods for the manufacture of extreme ultraviolet (EUV) mask blanks and production systems therefor are disclosed. A method for forming an EUV mask blank comprises forming a bilayer on a portion of a multi-cathode PVD chamber interior and then forming a multilayer stack of Si/Mo on a substrate in the multi-cathode PVD chamber.

The present invention describes an improved multilayer solar selective coating useful for solar thermal power generation. Solar selective coating of present invention essentially consists of Ti/Chrome interlayer, two absorber layers (AlTiN and AlTiON) an anti-reflection layer (AlTiO). Coating deposition process uses Ti and Al as the source materials, which are abundantly available and easy to manufacture as sputtering targets for industrial applications. The present invention allows deposition of all the layers in a single sputtering chamber on flat and tubular substrates with high absorptance and low emittance, thus making the process simpler and cost effective. The process of the present invention can be up-scaled easily for deposition on longer tubes with good uniformity and reproducibility. The coating of the present invention also displays improved adhesion, UV stability, corrosion resistance and stability under extreme environments.

A cutting implement including a metal substrate and a coating is provided. The coating has zirconium PVD (ZrCRTiNO), which provides protection against corrosion of the metal substrate. In some instances, the zirconium PVD provides protection from corrosion for at least 200 hours. A layer of titanium nitride (TiN) can be added to the coating to increase the hardness of the metal substrate. In such an embodiment, the layer of titanium nitride (TiN) is applied before the zirconium PVD (ZrCRTiNO). Titanium nitride (TiN) coated steel is 3 to 5 times harder than uncoated steel. Thus, a combination of titanium nitride (TiN) and zirconium PVD (ZrCRTiNO) as a coating on a metal substrate can increase the life of the metal substrate by providing increased hardness and anti-corrosive properties.