A plasma processing apparatus includes: a processing chamber disposed inside a vacuum container and in which plasma is formed; and a member which is a member forming an inner wall surface of the processing chamber and is disposed on a surface to be exposed to the plasma and has a coating film formed by spraying of yttrium fluoride or a material containing the yttrium fluoride. A ratio of an orthorhombic crystal of the yttrium fluoride or the material containing the yttrium fluoride forming the coating film relative to the entirety is 60% or more.

The present invention provides methods to sputter deposit films comprising alkali metal compounds. At least one target comprising one or more alkali metal compounds and at least one metallic component is sputtered to form one or more corresponding sputtered films. The at least one target has an atomic ratio of the alkali metal compound to the at least one metallic component in the range from 15:85 to 85:15. The sputtered film(s) incorporating such alkali metal compounds are incorporated into a precursor structure also comprising one or more chalcogenide precursor films. The precursor structure is heated in the presence of at least one chalcogen to form a chalcogenide semiconductor. The resultant chalcogenide semiconductor comprises up to 2 atomic percent of alkali metal content, wherein at least a major portion of the alkali metal content of the resultant chalcogenide semiconductor is derived from the sputtered film(s) incorporating the alkali metal compound(s). The chalcogenide semiconductors are useful in microelectronic devices, including solar cells.

According to one embodiment, an apparatus of manufacturing a radiation detection panel, includes an evaporation source configured to evaporate a scintillator material and emit the scintillator material vertically upward, a holding mechanism located vertically above the evaporation source, and holding a photoelectric conversion substrate, and a heat conductor arranged opposite to the holding mechanism with a gap.

The invention relates to an evaporation cell (1) for vacuum evaporation chamber, the evaporation cell (1) comprising a crucible (5), the crucible (5) being adapted to receive a solid or liquid material to be sublimated or evaporated, heating means (3) to heat the material in the crucible, a nozzle (6) placed at an open end of the crucible (5), the nozzle (6) comprising a frustoconical portion (61) having an opening (60) adapted for the passage of a flow of evaporated or sublimated material towards the vacuum evaporation chamber, and a cover (7) placed on the nozzle (6), the cover (7) having an opening (70) arranged about the frustoconical portion (61) of the nozzle (6). According to the invention, the cover (7) has at least one frustoconical portion (71, 72, 73) arranged about the frustoconical portion (61) of the nozzle (6), the cover (7) forming a thermal barrier between the crucible (5) and the vacuum evaporation chamber.

A carbon nanotube-based reference electrode and an all-carbon nanotube microelectrode assembly for electrochemical sensing and specialized analytics are disclosed, along with methods of manufacture, and applications including detection of ionic species including heavy metals in municipal and environmental water, monitoring of steel corrosion in steel-reinforced concrete, and analysis of biological fluids.

Optical elements including YbF.sub.3 layers with high transmittance in the LWIR spectral range are described. The YbF.sub.3 layer is produced by an ion-assisted deposition process under high voltage conditions. Dense, uniform, and nearly defect-free YbF.sub.3 layers are formed. The improved material quality of the YbF.sub.3 layers leads to low absorption in the LWIR spectral range, especially at wavelengths above 10.0 microns. The extinction coefficient of the YbF.sub.3 layers is less than 0.0400 at a wavelength of 13.5 microns.

The present invention relates a coating powder comprising a rare earth oxyfluoride (Ln-O—F) and having: an average particle size (D.sub.50) of 0.1 to 10 μm, a pore volume of pores having a diameter of 10 μm or smaller of 0.1 to 0.5 cm.sup.3/g as measured by mercury intrusion porosimetry, and a ratio of the maximum peak intensity (S0) assigned to a rare earth oxide (Ln.sub.xO.sub.y) in the 2θ angle range of from 20° to 40° to the maximum peak intensity (S1) assigned to the rare earth oxyfluoride (Ln-O—F) in the same range, S0/S1, of 1.0 or smaller in powder X-ray diffractometry using Cu-Kα rays or Cu-Kα.sub.1 rays.

According to at least one feature of the present disclosure, a method of forming an optical element, includes: Depositing an aluminum layer atop a glass substrate via a physical deposition process; depositing a first fluorine containing layer atop the aluminum layer via a physical deposition process; depositing a second fluorine containing layer atop the first fluorine containing layer via a physical deposition process; and depositing a third fluorine containing layer atop the first fluorine containing layer via an atomic layer deposition process.

An optical component includes an optical material which is a fluorine (F)-containing optical material doped with an F-containing species different from the F-containing optical material. A coating system for depositing the optical material onto a substrate or a bulk material of an optical component is an electron beam evaporation coating system, an ion assisted deposition coating system, or an ion beam sputtering coating system.

A system and method for fabricating perovskite films for solar cell applications are provided, the system including a housing for use as a vacuum chamber, a substrate stage coupled to the top section of the housing; a first evaporator unit coupled to the bottom section of the housing and configured to generate BX.sub.2 (metal halide material) vapor; a second evaporator unit coupled to the housing and configured to generate AX (organic material) vapor; and a flow control unit coupled to the housing for controlling circulation of the AX vapor. The dimensions of the horizontal cross-sectional shape of the first evaporator unit, the dimensions of the horizontal cross-sectional shape of the substrate stage, and the relative position in the horizontal direction between the two horizontal cross-sectional shapes are configured to maximize the overlap between the two horizontal cross-sectional shapes.