A coating for a bipolar plate of a fuel cell or an electrolyzer contains a homogeneous or heterogeneous solid metal solution. The coating contains at least 15% Iridium and up to 84% Ruthenium with a total combined concentration of Iridium and Ruthenium of at least 99% (atomic). The coating also contains at least one of Nitrogen, Carbon, and Flourine. The coating may contain traces of Oxygen or Hydrogen. The coating may be used as part of a layer system that includes one or more undercoat layers and the coating as a covering layer.

A corrosion-resistant member including: a metal base material (10); a corrosion-resistant coating (30) formed on the surface of the base material (10); and a buffer layer (20) formed between the base material (10) and the corrosion-resistant coating (30). The base material (10) contains a main element having the highest mass content ratio among elements contained in the base material (10) and a trace element having a mass content ratio of 1% by mass or less. The corrosion-resistant coating (30) contains at least one kind selected from magnesium fluoride, aluminum fluoride, and aluminum oxide. The buffer layer (20) contains an element of the same kind as the trace element, and the content ratio obtained by energy dispersive X-ray analysis of the element of the same kind as the trace element contained in the buffer layer (20) is 2% by mass or more and 99% by mass or less.

A corrosion-resistant member including: a metal base material (10); and a corrosion-resistant coating (30) formed on the surface of the base material (10). The corrosion-resistant coating (30) is a stack of a magnesium fluoride layer (31) and an aluminum fluoride layer (32) in order from the base material (10) side. The aluminum fluoride layer (32) has a first crystalline region (32A) and a second crystalline region (32B) containing crystalline aluminum fluoride. The first crystalline region (32A) is a region in which diffraction spot arrays having regularity are observed in an electron beam diffraction image obtained by irradiation with electron beams having a beam diameter of 10 nm to 20 nm. The second crystalline region (32B) is a region in which a plurality of diffraction spots is observed but diffraction spot arrays having regularity are not observed in an electron beam diffraction image obtained by irradiation with the above-described electron beams.

A method for ion-assisted deposition of optical coatings. The method may include performing one or more pre-deposition processes. The method may include performing evaporation using an evaporation assembly of an ion-assisted deposition system during ion-assisted deposition using a low energy ion beam source of the ion-assisted deposition system. The method may further include performing sputtering using a sputtering assembly of an ion-assisted deposition system. The evaporation assembly may include an evaporating target and an evaporator configured to directly evaporate target material from the evaporating target onto a surface of the one or more samples. The sputtering assembly may include a sputtering target and a sputtering high energy ion source configured to sputter target material from the sputtering target onto a surface of the one or more samples. The method may include performing one or more post-deposition treatment processes.

A method for fabricating a perovskite film includes the steps of: placing a substrate on a substrate stage in a chamber, the substrate stage configured to rotate around its central axis at a rotation speed; depositing first source materials on the substrate from a first set of evaporation units, each coupled to the side section or the bottom section of the chamber; depositing second source materials on the substrate from a second set of evaporation units coupled to the bottom section, wherein the chamber includes a shield defining two or more zones having respective horizontal cross-sectional areas, which are open and facing the substrate, designated for the two or more evaporation units in the second set. The perovskite film includes multiple unit layers each being formed by one rotation of the substrate stage, and having composition and thickness thereof controlled by adjusting evaporation rates, rotation speed and horizontal cross-sectional areas.

Vapor phase transport systems and methods of depositing perovskite films are described. In an embodiment, a deposition method includes feeding a perovskite solution or constituent powder to a vaporizer, followed by vaporization and depositing the constituent vapor as a perovskite film. In an embodiment, a deposition system and method includes vaporizing different perovskite precursors in different vaporization zones at different temperatures, followed by mixing the vaporized precursors to form a constituent vapor, and depositing the constituent vapor as a perovskite film.

Methods of stabilizing a vanadium compound in a solution, compositions including a vanadium compound and a stabilizing agent, apparatus including the composition, systems that use the composition, and methods of using the compositions, apparatus, and systems are disclosed. Use of the stabilizing agent allows for use of desired precursors, while mitigating unwanted decomposition of the precursors.

The invention relates to a method for synthesis of films made of light-absorbing material with perovskite-like structure which can be used for fabrication of perovskite solar cells. The method for synthesis of films made of light-absorbing material with perovskite-like structure with a structural formula ACB.sub.3 is characterized by sequential deposition of a layer of a reagent C onto a layer of a reagent AB with a thickness determined by stoichiometry of the reaction followed by the immersion of the layers in a liquid or gaseous medium containing reagent B.sub.2 where component A states for CH.sub.3NH.sub.3.sup.+, (NH.sub.2).sub.2CH.sup.+, C(NH.sub.2).sub.3.sup.+, Cs.sup.+ or a mixture thereof, component B states for Cl.sup.−, Br.sup.−, I.sup.− or a mixture thereof, component C states for metals Sn, Pb, Bi, or their melts, oxides, salts. The technical result achieved using the claimed invention is a simple and fast method for fabrication of a layer of light-absorbing organic-inorganic material with a perovskite-like structure which is homogeneous due to the formation of a film of the intermediate phase AB-B.sub.2 with improved morphology on the surfaces of a large area due to rapid crystallization, which allows the obtained material to be used in solar cells of large area.

Disclosed are a method of forming a plasma coating on a component, an apparatus for forming the coating, a component, and a processing apparatus; the apparatus for forming the coating includes: a vacuum chamber; a first coating material source, a second coating material source, and a component, which are disposed in the vacuum chamber; wherein the first coating material source includes oxygen atoms and yttrium atoms, and the second coating material source includes one of yttrium fluoride, aluminum-oxygen compound, or zirconium-oxygen compound; a first exciting device configured for exciting out the yttrium atoms and oxygen atoms from within the first coating material source; a second exciting device configured for exciting out atoms from within the second coating material source; wherein collision of the yttrium atoms and oxygen atoms excited out of the first coating material source and the atoms excited out of the second coating material source produces a chemical reaction to form on the component a plasma resistant coating including a stable phase of yttrium-based multi-element metal oxide or yttrium-based oxyfluoride. The coating formed using the apparatus has a strong plasma corrosion resistance property.

A method for preparing an ultrathin two-dimensional (2D) monocrystalline nanosheet, the method including: 1) placing BiX.sub.3 powder where X=I, Br, or Cl in a crucible, and putting the crucible on a first heating zone of a furnace disposed at a gas inlet of a quartz tube; placing substrates covered with metal sheets on a second heating zone of the furnace disposed at a gas outlet of the quartz tube; 2) vacuumizing the quartz tube; pumping Ar gas into the quartz tube until the air pressure is 101.325 kPa; pumping a carrier gas into the quartz tube; and 3) heating and maintaining the second heating zone; heating the first heating zone for BiX.sub.3 evaporation until producing chemical reaction between BiX.sub.3 and the metal sheets, and preparing ultrathin 2D nanosheets on the substrates simultaneously; and cooling the substrate naturally to 15-30° C.