Patent classifications
C23C14/08
COATINGS OF NON-PLANAR SUBSTRATES AND METHODS FOR THE PRODUCTION THEREOF
A coated article may comprise a substrate and an optical coating. The substrate may have a major surface comprising a first portion and a second portion. A first direction that is normal to the first portion of the major surface may not be equal to a second direction that is normal to the second portion of the major surface. The optical coating may be disposed on at least the first portion and the second portion of the major surface. The coated article may exhibit at the first portion of the substrate and at the second portion of the substrate hardness of about 8 GPa or greater at an indentation depth of about 50 nm or greater as measured on the anti-reflective surface by a Berkovich Indenter Hardness Test.
COATINGS OF NON-PLANAR SUBSTRATES AND METHODS FOR THE PRODUCTION THEREOF
A coated article may comprise a substrate and an optical coating. The substrate may have a major surface comprising a first portion and a second portion. A first direction that is normal to the first portion of the major surface may not be equal to a second direction that is normal to the second portion of the major surface. The optical coating may be disposed on at least the first portion and the second portion of the major surface. The coated article may exhibit at the first portion of the substrate and at the second portion of the substrate hardness of about 8 GPa or greater at an indentation depth of about 50 nm or greater as measured on the anti-reflective surface by a Berkovich Indenter Hardness Test.
METAL OXIDE AND SEMICONDUCTOR DEVICE INCLUDING THE METAL OXIDE
A novel metal oxide is provided. A semiconductor device with favorable electrical characteristics is provided. The metal oxide has a plurality of energy gaps, and includes a first region having a high energy level of a conduction band minimum and a second region having an energy level of a conduction band minimum lower than that of the first region. The second region includes more carriers than the first region. A difference between the energy level of the conduction band minimum of the first region and the energy level of the conduction band minimum of the second region is greater than or equal to 0.2 eV.
SPUTTERING TARGET AND METHOD FOR MANUFACTURING THE SAME
A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.
ORGANOTIN OXIDE HYDROXIDE PATTERNING COMPOSITIONS, PRECURSORS, AND PATTERNING
Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.
METHOD FOR PROCESSING NEGATIVE ELECTRODE PLATE, SODIUM-METAL NEGATIVE ELECTRODE PLATE AND RELATED DEVICE
A method for processing a negative electrode plate, a sodium-metal negative electrode plate and related devices. In a vacuum environment, the metal vapor reacts with oxygen, and the metal oxide formed by the reaction is plated on the surface of the sodium-metal negative electrode plate to form a metal oxide protective layer with high mechanical strength and stable chemical properties. The metal oxide protective layer can greatly reduce the phenomenon of low yield and performance deterioration caused by the reaction of sodium metal with air and water during the processing of the sodium-metal negative electrode plate. Since the metal oxide has a nanoscale thickness, it can form a corresponding sodium salt with sodium metal under electrochemical conditions, thereby improving the sodium ion transport rate on the surface of the sodium-metal negative electrode plate and improving the battery’s kinetic performance.
CUV2O6-BASED PHOTOELECTRIC SENSOR AND APPLICATION THEREOF IN DETECTION OF ARGININE
A CuV.sub.2O.sub.6-based photoelectric sensor is prepared through the following steps: acquiring a CuV.sub.2O.sub.6 thin film through a direct-current reactive magnetron co-sputtering method; and loading an 8-hydroxyquinoline solution on the CuV.sub.2O.sub.6 thin film through a spin-coating method to acquire an 8-hydroxyquinoline-modified CuV.sub.2O.sub.6 photoelectric sensor. The 8-hydroxyquinoline-modified CuV.sub.2O.sub.6 photoelectric sensor has a good anti-interference capability in the detection of arginine; it is easy to realize the low-cost mass production of CuV.sub.2O.sub.6 photoelectrodes through a developed direct-current reactive magnetron sputtering coating method; and a sensor device is low in cost, simple, portable, and easy to use, and has an application value in food safety and health and hygiene detection.
Calcium-magnesium-alumino-silicate resistant thermal barrier coatings
A method for forming a coating system on a component includes depositing a reactive layer with predetermined CMAS reaction kinetics on at least a portion of a thermal barrier coating. The method also includes activating the reactive layer with a scanning laser. A component, such as a gas turbine engine component, includes a substrate, a thermal barrier coating and a reactive layer. The thermal barrier coating is deposited on at least a portion of the substrate. The reactive layer is deposited on at least a portion of the thermal barrier coating. The reactive layer has predetermined CMAS reaction kinetics activated by laser scanning.
Ion beam sputtering with ion assisted deposition for coatings on chamber components
An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide film consists essentially of 40 mol % to less than 100 mol % of Y.sub.2O.sub.3, over 0 mol % to 60 mol % of ZrO.sub.2, and 0 mol % to 9 mol % of Al.sub.2O.sub.3.
Ion beam sputtering with ion assisted deposition for coatings on chamber components
An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide film consists essentially of 40 mol % to less than 100 mol % of Y.sub.2O.sub.3, over 0 mol % to 60 mol % of ZrO.sub.2, and 0 mol % to 9 mol % of Al.sub.2O.sub.3.