Disclosed is a thermal barrier coating system for components of a turbomachine, especially for high temperature-stressed or hot gas-stressed components of a turbomachine, comprising a ceramic coating of fully or partially stabilized zirconium oxide, and an oxide cover coating which comprises aluminum and at least one element from the group lanthanum, magnesium, silicon, calcium and sodium. The aluminum oxide exists at least partially as free α-Al.sub.2O.sub.3. Also disclosed is a method for producing a corresponding thermal barrier coating system.

A doped diamond semiconductor and method of production using a laser is disclosed herein. As disclosed, a dopant and/or a diamond or sapphire seed material may be added to a graphite based ablative layer positioned below a confinement layer, the ablative layer also being graphite based and positioned above a backing layer, to promote formation of diamond particles having desirable semiconductor properties via the action of a laser beam upon the ablative layer. Dopants may be incorporated into the process to activate the reaction sought to produce a material useful in production of a doped semiconductor or a doped conductor suitable for the purpose of modulating the electrical, thermal or quantum properties of the material produced. As disclosed, the diamond particles formed by either the machine or method of confined pulsed laser deposition disclosed may be arranged as semiconductors, electrical components, thermal components, quantum components and/or integrated circuits.

The present invention relates to a method of forming a coating layer of which a composition can be controlled, the method comprising steps of: preparing a substrate inside a chamber; evaporating a deposition material to generate YF.sub.3 or YOF particles in a gas phase by irradiating an electron beam on a YF.sub.3 deposition material provided in a solid form in an electron beam source; generating radical particles having activation energy by injecting a process gas containing oxygen into a RF energy beam source; irradiating an RF energy beam including oxygen radical particles toward the substrate; controlling a composition of a thin film by generating YOF deposition particles having a modified atomic ratio by adjusting an amount of fluorine substitution by oxygen as the YF.sub.3 or YOF particles and the oxygen radical particles react, and depositing the YOF deposition particles on the substrate with the RF energy beam.

Energy bands of a thin film containing molecular clusters are tuned by controlling the size and the charge of the clusters during thin film deposition. Using atomic layer deposition, an ionic cluster film is formed in the gate region of a nanometer-scale transistor to adjust the threshold voltage, and a neutral cluster film is formed in the source and drain regions to adjust contact resistance. A work function semiconductor material such as a silver bromide or a lanthanum oxide is deposited so as to include clusters of different sizes such as dimers, trimers, and tetramers, formed from isolated monomers. A type of Atomic Layer Deposition system is used to deposit on semiconductor wafers molecular clusters to form thin film junctions having selected energy gaps. A beam of ions contains different ionic clusters which are then selected for deposition by passing the beam through a filter in which different apertures select clusters based on size and orientation.

An exterior material for cooking appliance capable of improving durability, heat resistance, scratch resistance, and cleaning performance by forming a Silicon-Diamond like carbon (SiDLC) coating layer including silicon (Si) under a high-temperature environment, and a method for manufacturing the exterior material. The exterior material includes: a base material; and a SiDLC coating layer provided on the base material, wherein the SiDLC coating layer includes Si of about 1 weight % to 50 weight %, carbon (C), and other inevitable impurities.

Containers are provided that include a body structure having a top end that defines an opening, a sealed base end, and a sidewall structure extending between the top and base ends, in which the sidewall structure has an interior surface and an exterior surface, the interior surface defining an interior space, and a protective coating that includes a diamond-like carbon on at least a portion of the exterior surface of the sidewall structure. Methods for enhancing the mechanical strength of containers are also provided.

A deposition system includes comprising an induction crucible apparatus configured to produce a material vapour. When in use, the induction crucible apparatus is configured to inductively heat a crucible to generate two or more thermal zones in the crucible. The deposition system further includes a substrate support configured to support a substrate and a plasma source configured to generate a plasma between the induction crucible apparatus and the substrate support such that transmission of the material vapour at least partly through the plasma generates a deposition material for deposition on the substrate.

Described herein is a protective coating composition that provides erosion and corrosion resistance to a coated article (such as a chamber component) upon the article's exposure to harsh chemical environment (such as hydrogen based and/or halogen based environment) and/or upon the article's exposure to high energy plasma. Also described herein is a method of coating an article with the protective coating using electronic beam ion assisted deposition, physical vapor deposition, or plasma spray. Also described herein is a method of processing wafer, which method exhibits, on average, less than about 5 yttrium based particle defects per wafer.

A method of fabricating a superconducting wire includes forming a buffer layer on the substrate, the buffer layer including an Al.sub.2O.sub.3 layer, the Al.sub.2O.sub.3 layer being formed by reactive magnetron sputtering in which first oxygen gas as reactant gas and a sputtering target made of aluminium metal are used, the Al.sub.2O.sub.3 layer being formed while being supplied the first oxygen gas at a first concentration, the first concentration being a concentration of the first oxygen gas at which an emission intensity of Al in plasma near a surface of the sputtering target is not less than 25% and not more than 80% of a first reference value, the first reference value being the emission intensity of Al at which the concentration of the first oxygen gas is zero; and forming a superconducting layer above the buffer layer.

An exterior material of a home appliance having improved corrosion resistance and fingerprint resistance by changing a treatment method of a surface of the exterior material, and the home appliance including the same, and a manufacturing method therefor are provided. The method of manufacturing the exterior material of the home appliance, the method including applying a diamond like carbon (DLC) coating on the substrate to form a DLC coating layer; and conducting anti-fingerprint coating to form the anti-fingerprint coating on the DLC coating layer.