A doped diamond semiconductor and method of production using a laser is disclosed herein. As disclosed, a dopant and/or a diamond or sapphire seed material may be added to a graphite based ablative layer positioned below a confinement layer, the ablative layer also being graphite based and positioned above a backing layer, to promote formation of diamond particles having desirable semiconductor properties via the action of a laser beam upon the ablative layer. Dopants may be incorporated into the process to activate the reaction sought to produce a material useful in production of a doped semiconductor or a doped conductor suitable for the purpose of modulating the electrical, thermal or quantum properties of the material produced. As disclosed, the diamond particles formed by either the machine or method of confined pulsed laser deposition disclosed may be arranged as semiconductors, electrical components, thermal components, quantum components and/or integrated circuits.

A coated tool according to the present disclosure comprises a base body and a coating film. The base body is made of a cemented carbide or a cermet. The coating film is located on the base body. In a case where a hardness is measured by pressing an indenter from a surface of the coating film to a depth of 20% of the coating film while changing an indentation load of the indenter, when a minimum hardness of the hardness is defined as a first hardness, a maximum hardness of the hardness is defined as a second hardness, a depth at the first hardness is defined as a first hardness depth, and a depth at the second hardness is defined as a second hardness depth, the second hardness depth is smaller than the first hardness depth, and a difference therebetween is greater than 7 GPa.

A plasma processing apparatus comprising: a chamber; an upper electrode; a shower head having openings, an inner space of the chamber being divided into a first space and a second space; a shielding part including first and second shielding plates arranged in parallel between the upper electrode and the shower head, the shielding part having through-holes aligned with the openings; a gas supply device configured to supply a gas; a radio frequency (RF) power supply configured to output an RF voltage; a voltage applying part configured to select ions or radicals passing through the through-holes in the plasma by applying a control voltage to the shielding part; and a controller configured to control the voltage applying part by independently applying a control voltage to each of the first and second shield plates depending on control from the controller.

In one embodiment, a drug delivery system and method provide a member including a combination of a drug substance and a polymer or other material, and an encapsulating layer formed in an outer surface of the member by gas cluster ion beam irradiation of the outer surface of the member, which encapsulating layer is adapted to determine one or more characteristics of the drug delivery system.

A method of manufacturing a ferroelectric element includes forming an insulating film on one side of a metal substrate by an electron beam (EB) vapor deposition method or a sputtering method; forming a metal film on the insulating film by the sputtering method; and forming a ferroelectric film on the metal film by a sol-gel method. The metal substrate includes iron (Fe) and nickel (Ni), and a content of the nickel (Ni) is greater than or equal to 30% and less than or equal to 40%.

A method of making a light weight housing for an internal component is provided. The method including the steps of: forming a first metallic foam core into a desired configuration; forming a second metallic foam core into a desired configuration; inserting an internal component into the first metallic foam core; placing the second metallic foam adjacent to the first metallic core in order to secure the internal component between the first metallic foam core and the second metallic foam core; and applying an external metallic shell to an exterior surface of the first metallic foam core and the second metallic foam core.

A method of making a light weight component is provided. The method including the steps of: forming a metallic foam core into a desired configuration; and applying an external metallic shell to an exterior surface of the metallic foam core after it has been formed into the desired configuration.

A method of making a light weight component is provided. The method including the steps of: forming a metallic foam core into a desired configuration; inserting a pre-machined component into an opening in the metallic foam core; applying an external metallic shell to an exterior surface of the metallic foam core after it has been formed into the desired configuration and after the pre-machined component has been inserted into the metallic foam core; introducing an acid into an internal cavity defined by the external metallic shell; dissolving the metallic foam core; and removing the dissolved metallic foam core from the internal cavity, wherein the component and the external metallic shell are resistant to the acid.

A deposition method is implemented in a focused ion beam system that supplies a compound gas to a specimen, and applies an ion beam to the specimen to deposit a deposition film, the deposition method including: a first deposition film-depositing step that deposits a first deposition film on the specimen using the ion beam that is defocused with respect to the specimen; and a second deposition film-depositing step that deposits a second deposition film on the first deposition film using the ion beam that is smaller in defocus amount than that used in the first deposition film-depositing step.

An oxide superconducting wire, includes a laminate including a base material, an intermediate layer, and an oxide superconducting layer, the intermediate layer being laminated on a main surface of the base material, the intermediate layer being constituted of one or more layers having an orientation, the intermediate layer having one or more first non-orientation regions extending in a longitudinal direction of the base material, the oxide superconducting layer being laminated on the intermediate layer, the oxide superconducting layer having a crystal orientation controlled by the intermediate layer, the oxide superconducting layer having second non-orientation regions located on the first non-orientation regions, and a metal layer which covers at least a front surface and side surfaces of the oxide superconducting layer in the laminate.