C23C14/228

Method for holding and releasing a substrate
11814721 · 2023-11-14 · ·

The present disclosure provides a holding arrangement. The holding arrangement for holding a substrate includes: a body portion having a first side; a dry adhesive material provided on the first side of the body portion; a seal surrounding the dry adhesive material and configured to provide a vacuum region on the first side, wherein the dry adhesive material is provided in the vacuum region; and a conduit to evacuate the vacuum region.

ORGANIC VAPOR JET PRINTING SYSTEM

An organic vapor jet printing (OVJP) device is provided that includes an OVJP print die having one or more delivery channels to deliver organic material and carrier gas to a region below the print die and one or more exhaust channels to remove material from below the print die. A directly-heated delivery line connected to the one or more delivery channels and a source of the organic material external to the OVJP print die includes a resistive material and a plurality of electrical connections to the resistive material. When a current is applied to the resistive material via the plurality of electrical connections, the resistive material heats the interior of the directly-heated delivery line.

ORGANIC VAPOR JET PRINTING SYSTEM

Methods, systems, and devices are provided for organic vapor jet deposition (OVJP), which require significantly fewer print heads than conventional OVJP deposition systems. The disclosed OVJP systems include half the number of OVJP print heads than a conventional system, or less, and provide for relative movement of the substrate and print heads to allow for rapid and comprehensive material deposition over the full surface of the substrate.

Deposition Apparatus and Methods

A deposition apparatus (20) comprising: a chamber (22); a process gas source (62) coupled to the chamber; a vacuum pump (52) coupled to the chamber; at least two electron guns (26); one or more power supplies (30) coupled to the electron guns;

a plurality of crucibles (32,33,34) positioned or positionable in an operative position within a field of view of at least one said electron gun; and a part holder (170) having at least one operative position for holding parts spaced above the crucibles by a standoff height H. The standoff height H is adjustable in a range including at least 22 inches.

HOLDING ARRANGEMENT FOR HOLDING A SUBSTRATE, CARRIER FOR SUPPORTING A SUBSTRATE, VACUUM PROCESSING SYSTEM, METHOD FOR HOLDING A SUBSTRATE, AND METHOD FOR RELEASING A SUBSTRATE
20220243316 · 2022-08-04 ·

The present disclosure provides a holding arrangement. The holding arrangement for holding a substrate includes: a body portion having a first side; a dry adhesive material provided on the first side of the body portion; a seal surrounding the dry adhesive material and configured to provide a vacuum region on the first side, wherein the dry adhesive material is provided in the vacuum region; and a conduit to evacuate the vacuum region.

Multilayered zinc alloy plated steel material having excellent spot weldability and corrosion resistance
11414743 · 2022-08-16 · ·

Provided is a multilayered zinc alloy plated steel material comprising a base iron and multilayered plated layers formed on the base iron, wherein each of the multilayered plated layers is any one of a Zn-plated layer, a Mg-plated layer, and a Zn—Mg alloy-plated layer, and the ratio of the weight of Mg contained in the multilayered plated layers is 0.13-0.24 on the basis of the total weight of the multilayered plated layers.

SYMMETRIC PUMP DOWN MINI-VOLUME WITH LAMINAR FLOW CAVITY GAS INJECTION FOR HIGH AND LOW PRESSURE

Aspects of the present disclosure provide systems and apparatuses for a substrate processing assembly with a laminar flow cavity gas injection for high and low pressure. A dual gas reservoir assembly is provided in a substrate processing chamber, positioned within a lower shield assembly. A first gas reservoir is in fluid communication with a processing volume of the substrate processing assembly via a plurality of gas inlet, positioned circumferentially about the processing volume. A second gas reservoir is positioned circumferentially about the first gas reservoir, coupled therewith via one or more reservoir ports. The second gas reservoir is in fluid communication with a first gas source. A recursive path gas assembly is positioned in an upper shield body adjacent to an electrode to provide one or more gases to a dark space gap.

PROCESSING APPARATUS AND GAS SUPPLY METHOD
20220290814 · 2022-09-15 ·

A processing apparatus includes: a processing container configured to accommodate a substrate; a storage tank connected to the processing container via a gas supply pipe; a pressure sensor configured to detect a pressure in the storage tank; a valve provided in the gas supply pipe between the processing container and the storage tank; and a controller configured to control an opening degree of the valve based on the pressure in the storage tank detected by the pressure sensor.

VAPOR PHASE TRANSPORT SYSTEM AND METHOD FOR DEPOSITING PEROVSKITE SEMICONDUCTORS

Vapor phase transport systems and methods of depositing perovskite films are described. In an embodiment, a deposition method includes feeding a perovskite solution or constituent powder to a vaporizer, followed by vaporization and depositing the constituent vapor as a perovskite film. In an embodiment, a deposition system and method includes vaporizing different perovskite precursors in different vaporization zones at different temperatures, followed by mixing the vaporized precursors to form a constituent vapor, and depositing the constituent vapor as a perovskite film.

Spatial control of vapor condensation using convection

Embodiments of the disclosed subject matter provide a device including a nozzle, a source of material to be deposited on a substrate in fluid communication with the nozzle, a delivery gas source in fluid communication with the source of material to be deposited with the nozzle, an exhaust channel disposed adjacent to the nozzle, and a confinement gas source in fluid communication with the nozzle and the exhaust channel, and disposed adjacent to the exhaust channel.