The present invention provides a novel method for producing a laminate to be used as a light-transmissive electrode layer and an N-type semiconductor layer of a wet or solid-state dye-sensitized solar cell comprising a light-transmissive electrode layer, an N-type semiconductor layer, a P-type semiconductor layer, and a facing electrode in this order. In said method, a member to be used as the light-transmissive electrode layer is cathode-polarized in a treatment solution containing a Ti component so as to form a titanium oxide layer to be used as the N-type semiconductor layer on said member.

The present invention provides a novel method for producing a laminate to be used as a light-transmissive electrode layer and an N-type semiconductor layer of a wet or solid-state dye-sensitized solar cell comprising a light-transmissive electrode layer, an N-type semiconductor layer, a P-type semiconductor layer, and a facing electrode in this order. In said method, a member to be used as the light-transmissive electrode layer is cathode-polarized in a treatment solution containing a Ti component so as to form a titanium oxide layer to be used as the N-type semiconductor layer on said member.

A sputtering target assembly, sputtering apparatus, and method, the target assembly including a backing plate having an aperture formed therein; and a target bonded to a front surface of the backing plate. The aperture is disposed on the backing plate such that a first end of the aperture is sealed by a portion of the target that is predicted by a sputtering target erosion profile to have the highest etching rate during a corresponding sputtering process.

Methods for forming thin, low resistivity metal layers, such as tungsten (W) and ruthenium (Ru) layers. The methods include depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250° C. to produce the metal film. A resulting thin tungsten film has large and highly oriented α(110) grains having a resistivity less than 9 μΩ-cm and thickness less than 300 Å, with no discernable β-phase. A resulting thin ruthenium film has a resistivity less than 10 μΩ-cm and a thickness less than 300 Å.

A image forming method of the present invention includes steps of forming a coloring material layer by applying an ink containing water and a dispersible coloring material dispersed in the water to the surface of a fabric by an inkjet method; and forming, on a surface of the coloring material layer, a protective layer having an average thickness smaller than that of the coloring material layer.

A image forming method of the present invention includes steps of forming a coloring material layer by applying an ink containing water and a dispersible coloring material dispersed in the water to the surface of a fabric by an inkjet method; and forming, on a surface of the coloring material layer, a protective layer having an average thickness smaller than that of the coloring material layer.

A highly-ordered nano-structure array, formed on a substrate, mainly comprises a plurality of highly-ordered nano-structure units. Each of the highly-ordered nano-structure units forms a receiving compartment. One end of the receiving compartment opposite to the substrate has an opening. Each of the highly-ordered nano-structure units comprises at least one thin film layer. A periphery and a bottom of the receiving compartment are defined by an inner surface of a surrounding portion of the at least one thin film layer and a top surface of a bottom portion of the at least one thin film layer, respectively. The at least one thin film layer is made of at least one material selected from the group consisting of: metal, alloy, oxide, nitride, and sulfide.

An apparatus for generating sputtering of a target to produce a coating on a substrate is provided. The apparatus has a magnetron including a cathode and an anode. A power supply is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. The apparatus also includes an inductance operably connected to the at least one capacitor. A first switch and a second switch are also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. The second switch is operably connected to discharge the magnetron. The second switch is configured to discharge the magnetron according to a second pulse.

The invention relates to a method for decorating a timepiece component comprising: a) a step of preparation of the timepiece component optionally comprising a first step of depositing a first material on the timepiece component to form a first sub-layer, b) a second step of depositing a second material on the timepiece component obtained in step a) to form a second sub-layer, c) a colouring step comprising the deposition of a third coloured material on the timepiece component obtained in step b) to form a coloured external decorative layer, According to the invention, at least step b) and step c) are achieved by a physical vapour deposition method.

The invention relates to a method for decorating a timepiece component comprising: a) a step of preparation of the timepiece component optionally comprising a first step of depositing a first material on the timepiece component to form a first sub-layer, b) a second step of depositing a second material on the timepiece component obtained in step a) to form a second sub-layer, c) a colouring step comprising the deposition of a third coloured material on the timepiece component obtained in step b) to form a coloured external decorative layer, According to the invention, at least step b) and step c) are achieved by a physical vapour deposition method.