According to one embodiment, a film formation apparatus includes a chamber having an interior to be vacuumed, a carrying unit which is provided in the chamber, and which carries a workpiece that has a processing target surface in a solid shape along a circular carrying path, a film formation unit that causes a film formation material to be deposited by sputtering on the workpiece that is being carried by the carrying unit to form a film thereon, and a shielding member which has an opening located at a side where the workpiece passes through, and which forms a film formation chamber where the film formation by the film formation unit is performed. A compensation plate that protrudes in the film formation chamber is provided, and the compensation plate has a solid shape along a shape of the processing target surface of the workpiece, and is provided at a position facing the workpiece.

According to one embodiment, a film formation apparatus includes a chamber having an interior to be vacuumed, a carrying unit which is provided in the chamber, and which carries a workpiece that has a processing target surface in a solid shape along a circular carrying path, a film formation unit that causes a film formation material to be deposited by sputtering on the workpiece that is being carried by the carrying unit to form a film thereon, and a shielding member which has an opening located at a side where the workpiece passes through, and which forms a film formation chamber where the film formation by the film formation unit is performed. A compensation plate that protrudes in the film formation chamber is provided, and the compensation plate has a solid shape along a shape of the processing target surface of the workpiece, and is provided at a position facing the workpiece.

A gas flow system is provided, including a gas flow source, one or more gas inlets, one or more gas outlets, a gas flow region, a low pressure region, wherein the low pressure region is fluidly coupled to the one or more gas outlets, a high pressure region, and a gap. The one or more gas inlets are fluidly coupleable to the gas flow source. The gas flow region is fluidly coupled to the one or more gas inlets and the one or more gas outlets. The gap fluidly couples the gas flow region to the high pressure region. The high pressure region near the targets allows for process gas interactions with the target to sputter onto the substrate below. The low pressure region near the substrate prevents unwanted chemical interactions between the process gas and the substrate.

A gas flow system is provided, including a gas flow source, one or more gas inlets, one or more gas outlets, a gas flow region, a low pressure region, wherein the low pressure region is fluidly coupled to the one or more gas outlets, a high pressure region, and a gap. The one or more gas inlets are fluidly coupleable to the gas flow source. The gas flow region is fluidly coupled to the one or more gas inlets and the one or more gas outlets. The gap fluidly couples the gas flow region to the high pressure region. The high pressure region near the targets allows for process gas interactions with the target to sputter onto the substrate below. The low pressure region near the substrate prevents unwanted chemical interactions between the process gas and the substrate.

A target for sputtering comprises SiZrxOy wherein x is higher than 0.02 but not higher than 5, and y is higher than 0.03 but not higher than 2*(1+x), wherein the target has an XRD pattern with silicon 2-theta peak at 28.29°+/−0.3°, or a tetragonal phase ZrO2 2-theta peak at 30.05°+/−0.3°. The target has a low resistivity, below 1000 ohm.Math.cm, preferably below 100 ohm.Math.cm, more preferably below 10 ohm.Math.cm, even lower than 1 ohm.Math.cm.

The present invention discloses a non-reactive PVD coating process for producing an aluminium-rich Al.sub.xTi.sub.1−xN-based thin film having an aluminium content of >75 at-% based on the total amount of aluminium and titanium in the thin film, a cubic crystal structure, and a columnar microstructure, wherein ceramic targets are used as a material source for the aluminium-rich Al.sub.xTi.sub.1−xN-based thin film.

An erbium-doped bismuth oxide emitting light from high-intensity Er.sup.3+ ions is produced. Provided is a method of producing an erbium-doped bismuth oxide film including: a step of disposing a first sputtering target containing the bismuth oxide, a second sputtering target containing erbium oxide (Er.sub.2O.sub.3), and a substrate in a closed film forming chamber separately from each other; a step of setting the temperature of the substrate to room temperature, introducing H.sub.2O gas into the film forming chamber at a predetermined pressure, and supplying H.sub.2O gas in the vicinity of the substrate; a step of simultaneously sputtering the first sputtering target and the second sputtering target to deposit a part of the first sputtering target and a part of the second sputtering target on the substrate to form a precursor film; and a step of forming a crystalline film by heating the precursor film at a predetermined temperature.

A coated member, an electronic device, and a method for manufacturing the coated member are provided. The coated member comprises a substrate, a color layer formed on a surface of the substrate, and an interference layer formed on a surface of the color layer. A coordinate L* corresponding to a color space presented by the color layer in a CIE LAB color system is within a preset range. When the coordinates of L* are within the preset range, the color of the coated member may be the same or may be different from the color of the color layer. Light passes through the interference layer and then enters the color layer. The color layer reflects and refracts the light. The reflected light enters the interference layer. The interference layer interferes with the reflected light, so that the coated member appears to be a target color.

Some implementations described herein provide a deposition tool and methods of operation. The deposition tool may be used in the fabrication of integrated circuit devices to deposit materials and/or layers on a semiconductor substrate. The deposition tool may include a chamber (e.g., a processing chamber) that is coated with a dielectric coating on sidewalls of the chamber. The dielectric coating on the sidewalls of the chamber within the deposition tool increases a likelihood of a negative charge accumulating near the sidewalls of the chamber. The increased likelihood of negative charge accumulation near the sidewalls of the chamber may improve a uniformity of an electromagnetic field within the deposition tool (e.g., during a deposition operation) relative to another deposition too not including such a dielectric coating. The improved uniformity of the electromagnetic field may enable an improved uniformity of a material being deposited by the deposition tool to be achieved.

Some implementations described herein provide a deposition tool and methods of operation. The deposition tool may be used in the fabrication of integrated circuit devices to deposit materials and/or layers on a semiconductor substrate. The deposition tool may include a chamber (e.g., a processing chamber) that is coated with a dielectric coating on sidewalls of the chamber. The dielectric coating on the sidewalls of the chamber within the deposition tool increases a likelihood of a negative charge accumulating near the sidewalls of the chamber. The increased likelihood of negative charge accumulation near the sidewalls of the chamber may improve a uniformity of an electromagnetic field within the deposition tool (e.g., during a deposition operation) relative to another deposition too not including such a dielectric coating. The improved uniformity of the electromagnetic field may enable an improved uniformity of a material being deposited by the deposition tool to be achieved.