Embodiments of process kits for use in plasma process chambers are provided herein. In some embodiments, a process kit for use in a process chamber includes an annular body having an upper portion and a lower portion extending downward and radially inward from the upper portion, wherein the annular body includes an inner surface having a first segment that extends downward, a second segment that extends radially outward from the first segment, a third segment that extends downward from the second segment, a fourth segment that extends radially outward from the third segment, a fifth segment that extends downward from the fourth segment, a sixth segment that extends radially inward from the fifth segment, a seventh segment that extends downward from the sixth segment, and an eighth segment that extends radially inward from the seventh segment.

Embodiments of process kits for use in plasma process chambers are provided herein. In some embodiments, a process kit for use in a process chamber includes an annular body having an upper portion and a lower portion extending downward and radially inward from the upper portion, wherein the annular body includes an inner surface having a first segment that extends downward, a second segment that extends radially outward from the first segment, a third segment that extends downward from the second segment, a fourth segment that extends radially outward from the third segment, a fifth segment that extends downward from the fourth segment, a sixth segment that extends radially inward from the fifth segment, a seventh segment that extends downward from the sixth segment, and an eighth segment that extends radially inward from the seventh segment.

In various embodiments, eroded sputtering targets are partially refurbished by spray-depositing particles of target material to at least partially fill certain regions (e.g., regions of deepest erosion) without spray-deposition within other eroded regions (e.g., regions of less erosion). The partially refurbished sputtering targets may be sputtered after the partial refurbishment without substantive changes in sputtering properties (e.g., sputtering rate) and/or properties of the sputtered films.

A method for producing a coated cutting tool includes depositing on every flank face and every rake face of the cutting tool an Al.sub.2O.sub.3 layer by a HIPIMS process during two-fold or three-fold rotation of the substrates, at a substrate temperature ≥350° C. but <600° C., the deposited Al.sub.2O.sub.3 layer including α-Al.sub.2O.sub.3.

The present invention discloses a high-temperature stable ceramic coating structure including a microalloy comprising the elements Al, V and N producible by a gas phase deposition process.

The present invention discloses a PVD coating process for producing a multifunctional coating structure comprising the steps of producing a HEA ceramic matrix on a substrate and the targeted introduction of a controlled precipitate structure into the HEA ceramic matrix to generate a desired specific property of the coating structure.

The present invention discloses a PVD coating process for producing a multifunctional coating structure comprising the steps of producing a HEA ceramic matrix on a substrate and the targeted introduction of a controlled precipitate structure into the HEA ceramic matrix to generate a desired specific property of the coating structure.

A CoPt-oxide-based in-plane magnetized film having a magnetic coercive force of 2.00 kOe or more and remanent magnetization per unit area Mrt of 2.00 memu/cm.sup.2 or more. The in-plane magnetized film for use as a hard bias layer of a magnetoresistive element contains metal Co, metal Pt, and an oxide. The in-plane magnetized film contains the metal Co in an amount of 55 at % or more and less than 95 at % and the metal Pt in an amount of more than 5 at % and 45 at % or less relative to a total of metal components of the in-plane magnetized film, and contains the oxide in an amount of 10 vol % or more and 42 vol % or less relative to a whole amount of the in-plane magnetized film. The in-plane magnetized film has a thickness of 20 nm or more and 80 nm or less.

A method for preparing a bactericidal film on fiber cloth, comprising cleansing a reel of fiber cloth; placing the reel of fiber cloth into a vacuum chamber; supplying a DC power and a mid-frequency power; introducing argon gas to increase the chamber pressure to 0.3 Pa; position sputtering targets in the following order: silicon target, silicon carbide target, silver target, silicon carbide target, silver target, silicon carbide target and silver target, and then sputtering the targets simultaneously; wherein the silicon targets act as a bonding layer between the bactericidal film and the substrate; stopping the silicon targets, the silicon carbide targets and the silver targets first, and then turning off the argon gas; injecting air into the chamber until the pressure in the chamber and the atmospheric pressure are balanced.

The manufacturing cost of a sputtering target is reduced and the impurity concentration of the manufactured sputtering target is also reduced. A method of manufacturing a sputtering target includes: surface-treating at least one of a used sputtering target and a scrap material; melting at least one of the used sputtering target and the scrap material after the surface treatment to form an ingot; and manufacturing a sputtering target by subjecting the ingot to forging, rolling, heat treating, and machining.