In some implementations of the current subject matter, a brake rotor can include a supporting layer applied to a friction surface of a brake rotor substrate, which can optionally include cast iron, and a coating applied over the supporting layer. The supporting layer can include a preparatory metal, and the coating can impart wear and corrosion resistant properties to the friction surface. Related systems, methods, articles of manufacture, and the like are disclosed.

In some implementations of the current subject matter, a brake rotor can include a supporting layer applied to a friction surface of a brake rotor substrate, which can optionally include cast iron, and a coating applied over the supporting layer. The supporting layer can include a preparatory metal, and the coating can impart wear and corrosion resistant properties to the friction surface. Related systems, methods, articles of manufacture, and the like are disclosed.

A nanopore cell includes a conductive layer. The nanopore cell further includes a titanium nitride (TiN) working electrode disposed above the conductive layer. The nanopore cell further includes insulating walls disposed above the TiN working electrode, wherein the insulating walls and the TiN working electrode form a well into which an electrolyte may be contained. In some embodiments, the TiN working electrode comprises a spongy and porous TiN working electrode that is deposited by a deposition technique with conditions tuned to deposit sparsely-spaced TiN columnar structures or columns of TiN crystals above the conductive layer.

A component includes a film containing polycrystalline yttrium oxide. In an X-ray diffraction pattern of the film, a ratio I.sub.m/I.sub.c of a maximum intensity I.sub.m of a peak attributed to monoclinic yttrium oxide to a maximum intensity I.sub.c of a peak attributed to cubic yttrium oxide satisfies an expression: 0≤I.sub.m/I.sub.c≤0.002.

The object of the present invention is to provide a large-sized gallium nitride-based sintered body having a small oxygen amount and high strength, a large-sized gallium nitride-based sintered body having a small oxygen amount and containing a dopant, to obtain a highly crystalline gallium nitride thin film which has become a n-type or p-type semiconductor by a dopant, and methods for producing them.

A gallium nitride-based sintered body, which has an oxygen content of at most 1 atm % and an average particle size (D50) of at least 1 μm and at most 150 μm.

A sputtering target contains Ge, Sb, and Te and has a high-oxygen region with a high oxygen concentration and a low-oxygen region having a lower oxygen concentration than the high-oxygen region, and has a structure in which the low-oxygen regions are dispersed in island form in a matrix of the high-oxygen region. In the sputtering target, voids with a diameter of 0.5 μm or more and 5.0 μm or less may be present in a range of 2 or more and 10 or less in a range of 0.12 mm.sup.2 for the average density.

Systems and methods that enable printing of conformal materials and other waterproof coating materials at high resolution. An initial printing of a material on edges of a component is performed at high resolution in a first printing step, and a subsequent printing of the material on remaining surfaces of the component is applied in a second printing step, with or without curing of the material printed on the edges between the two printing steps. The printing of the material may be performed by a laser-assisted deposition or using another dispensing system to achieve a high resolution printing of the material and a high printing speed.

Embodiments disclosed herein generally relate to a system and, more specifically, a substrate processing system. The substrate processing system includes one or more cooling systems. The cooling systems are configured to lower and/or control the temperature of a body of the substrate processing system. The cooling systems include features to cool the body disposed in the substrate processing system using gas and/or liquid cooling systems. The cooling systems disclosed herein can be used when the body is disposed at any height.

Embodiments disclosed herein generally relate to a system and, more specifically, a substrate processing system. The substrate processing system includes one or more cooling systems. The cooling systems are configured to lower and/or control the temperature of a body of the substrate processing system. The cooling systems include features to cool the body disposed in the substrate processing system using gas and/or liquid cooling systems. The cooling systems disclosed herein can be used when the body is disposed at any height.

Compositions of matter described as urea (multi)-urethane (meth)acrylate-silanes having the general formula R.sub.A—NH—C(O)—N(R.sup.4)—R.sup.11—[O—C(O)NH—R.sub.S].sub.n, or R.sub.S—NH—C(O)—N(R.sup.4)—R.sup.11—[O—C(O)NH—R.sub.A].sub.n. Also described are articles including a substrate, a base (co)polymer layer on a major surface of the substrate, an oxide layer on the base (co)polymer layer; and a protective (co)polymer layer on the oxide layer, the protective (co)polymer layer including the reaction product of at least one urea (multi)-urethane (meth)acrylate-silane precursor compound. The substrate may be a (co)polymer film or an electronic device such as an organic light emitting device, electrophoretic light emitting device, liquid crystal display, thin film transistor, or combination thereof. Methods of making such urea (multi)-urethane (meth)acrylate-silane precursor compounds, and their use in composite films and electronic devices are also described. Methods of using multilayer composite films as barrier films in articles selected from solid state lighting devices, display devices, and photovoltaic devices are also described.