Compositions of matter described as urea (multi)-urethane (meth)acrylate-silanes having the general formula R.sub.A—NH—C(O)—N(R.sup.4)—R.sup.11—[O—C(O)NH—R.sub.S].sub.n, or R.sub.S—NH—C(O)—N(R.sup.4)—R.sup.11—[O—C(O)NH—R.sub.A].sub.n. Also described are articles including a substrate, a base (co)polymer layer on a major surface of the substrate, an oxide layer on the base (co)polymer layer; and a protective (co)polymer layer on the oxide layer, the protective (co)polymer layer including the reaction product of at least one urea (multi)-urethane (meth)acrylate-silane precursor compound. The substrate may be a (co)polymer film or an electronic device such as an organic light emitting device, electrophoretic light emitting device, liquid crystal display, thin film transistor, or combination thereof. Methods of making such urea (multi)-urethane (meth)acrylate-silane precursor compounds, and their use in composite films and electronic devices are also described. Methods of using multilayer composite films as barrier films in articles selected from solid state lighting devices, display devices, and photovoltaic devices are also described.

The present invention provides for an electroactive device having a first conductive layer, a second conductive layer, and one or more electroactive layers sandwiched between the first and second conductive layers. One or more adjacent layers of the electroactive device may include a physical separation between a first portion and a second portion of the adjacent layers, the physical separation defining a respective tapered sidewall of each of the first and second portions. The one or more adjacent layers may include one of the first and second conductive layers. The remaining layers of the electroactive device may be formed over the physical separation of the one or more adjacent layers. The remaining layers may include the other of the first and second conductive layers.

The present invention provides for an electroactive device having a first conductive layer, a second conductive layer, and one or more electroactive layers sandwiched between the first and second conductive layers. One or more adjacent layers of the electroactive device may include a physical separation between a first portion and a second portion of the adjacent layers, the physical separation defining a respective tapered sidewall of each of the first and second portions. The one or more adjacent layers may include one of the first and second conductive layers. The remaining layers of the electroactive device may be formed over the physical separation of the one or more adjacent layers. The remaining layers may include the other of the first and second conductive layers.

The disclosure describes techniques for forming nanoparticles including Fe.sub.16N.sub.2 phase. In some examples, the nanoparticles may be formed by first forming nanoparticles including iron, nitrogen, and at least one of carbon or boron. The carbon or boron may be incorporated into the nanoparticles such that the iron, nitrogen, and at least one of carbon or boron are mixed. Alternatively, the at least one of carbon or boron may be coated on a surface of a nanoparticle including iron and nitrogen. The nano particle including iron, nitrogen, and at least one of carbon or boron then may be annealed to form at least one phase domain including at least one of Fe.sub.16N.sub.2, Fe.sub.16(NB).sub.2, Fe.sub.16(NC).sub.2, or Fe.sub.16(NCB).sub.2.

A coated metallic substrate is provided, including, at least; one layer of oxides, such layer being directly topped by an intermediate coating layer comprising Fe, Ni, Cr and Ti wherein the amount of Ti is above or equal to 5 wt. % and wherein the following equation is satisfied: 8 wt. %<Cr+Ti<40 wt. %, the balance being Fe and Ni, such intermediate coating layer being directly topped by a coating layer being an anticorrosion metallic coating.

A coated metallic substrate is provided, including, at least; one layer of oxides, such layer being directly topped by an intermediate coating layer comprising Fe, Ni, Cr and Ti wherein the amount of Ti is above or equal to 5 wt. % and wherein the following equation is satisfied: 8 wt. %<Cr+Ti<40 wt. %, the balance being Fe and Ni, such intermediate coating layer being directly topped by a coating layer being an anticorrosion metallic coating.

A sputtering target comprising a flat part and a tapered part on a sputter surface, wherein of the tapered part includes a crystal distortion having an average KAM value of 0.5° or more. It is possible to lower the ignition failure rate of ignition (plasma ignition), and start the sputter process stably. Because the downtime of the device can thereby be shortened, it is possible to contribute to the improvement in throughput and cost performance.

An apparatus with a deposition source and a substrate holder having a source mounting portion, which is rotatable about a first axis, a shielding element, which is disposed between the deposition source and the substrate holder, and a drive arrangement. The deposition source has a material outlet opening from which material is emitted. A longitudinal axis of an elongate central region of the material outlet opening extends parallel and centrally between the edges of the material outlet opening. The deposition source is mounted to the source mounting portion such that the longitudinal axis of the central region is parallel to the first axis. The shielding element has an aperture. The drive arrangement controls rotation of the source mounting portion, adjustment of a width of the aperture, and relative movement between the substrate holder and both the source mounting portion and the shielding element.

An apparatus with a deposition source and a substrate holder having a source mounting portion, which is rotatable about a first axis, a shielding element, which is disposed between the deposition source and the substrate holder, and a drive arrangement. The deposition source has a material outlet opening from which material is emitted. A longitudinal axis of an elongate central region of the material outlet opening extends parallel and centrally between the edges of the material outlet opening. The deposition source is mounted to the source mounting portion such that the longitudinal axis of the central region is parallel to the first axis. The shielding element has an aperture. The drive arrangement controls rotation of the source mounting portion, adjustment of a width of the aperture, and relative movement between the substrate holder and both the source mounting portion and the shielding element.

Disclosed is a PVD processing method including a first process, a second process, a third process, and a fourth process. In the first process, an opening of a shield, which is provided between a first target containing a metal oxide and a second target containing a metal constituting the metal oxide, and a stage on which a substrate as a film formation object is placed, is made to coincide with the first target so as to expose the first target to the stage and the opening is brought close to the first target. In the second process, sputtering is performed using the first target. In the third process, the opening is made to coincide with the second target so as to expose the first target to the stage, and the opening is brought close to the second target. In the fourth process, sputtering is performed using the second target.