A system for treating a substrate comprising an unwinder adapted to receive and unwind a roll of substrate and a rewinder adapted to rewind the substrate from the unwinder. The system further comprising a physical vapour deposition (PVD) apparatus, a vacuum chamber in which the unwinder, PVD apparatus and rewinder are disposed; and wherein a coating drum of the PVD apparatus has a temperature of between 0° C. and 10° C., and is adapted to increase a desorption rate of the substrate.

Provided is a sputtering target capable of reducing generation of particles, and a method for producing the same. The sputtering target includes: 10 mol % or more and 85 mol % or less of Co, 0 mol % or more and 47 mol % or less of Pt, and 0 mol % or more and 47 mol % or less of Cr, as metal components; and at least B.sub.6O as an oxide component.

A fixture, a tray and a sputtering system. The fixture is internally provided with a support structure and a clamping structure connected with each other, wherein the clamping structure is configured to clamp a to-be-sputtered substrate; an orthographic projection of the clamping structure on a plane where the support structure is located and the support structure share an superimposed area and are separate in non-superimposed areas; wherein the support structure located in the non-superimposed area and/or the clamping structure located in the non-superimposed area has a first hollowed structure. The fixture is internally provided with the first hollowed structure, such that a part of an area of the to-be-sputtered substrate covered by the fixture may be exposed via the first hollowed structure when the fixture holds the to-be-sputtered substrate, so as to reduce the area of the to-be-sputtered substrate covered by the fixture.

A laminate, a display device including the laminate, and an article including the display, the laminate including a substrate, a protective layer, and an intermediate layer provided between the substrate and the protective layer, wherein the protective layer includes a fluorine-containing (poly)ether amide silane compound represented by Formula 1 and having a molecular weight greater than 2,000 Da, and the intermediate layer includes at least one Si—O bond and having a density greater than about 2.0 g/cm.sup.3 and less than about 2.5 g/cm.sup.3,

Rf-(L1).sub.p1-Q1-(L2).sub.p2-Si(R.sub.1)(R.sub.2)(R.sub.3)  Formula 1 wherein, in Formula 1, Rf, L1, p1, Q1, L2, p2, R.sub.1 to R.sub.3 are the same as described in the specification.

A laminate, a display device including the laminate, and an article including the display, the laminate including a substrate, a protective layer, and an intermediate layer provided between the substrate and the protective layer, wherein the protective layer includes a fluorine-containing (poly)ether amide silane compound represented by Formula 1 and having a molecular weight greater than 2,000 Da, and the intermediate layer includes at least one Si—O bond and having a density greater than about 2.0 g/cm.sup.3 and less than about 2.5 g/cm.sup.3,

Rf-(L1).sub.p1-Q1-(L2).sub.p2-Si(R.sub.1)(R.sub.2)(R.sub.3)  Formula 1 wherein, in Formula 1, Rf, L1, p1, Q1, L2, p2, R.sub.1 to R.sub.3 are the same as described in the specification.

A sputtering target and a method for fabricating an electronic device using the same are provided. A sputtering target may include a carbon-doped GeSbTe alloy, wherein, for the carbon-doped GeSbTe alloy, an average grain diameter of a GeSbTe alloy after sintering is in a range of 0.5 μm to 5 μm, and a first ratio of an average grain diameter of carbon after the sintering is Y (μm) to the average grain diameter of the GeSbTe alloy after the sintering may be in a range of greater than 0.5 and equal to or less than 1.5. Alternatively, for the carbon-doped GeSbTe alloy, a condition of Y=X×(Z/100) may be satisfied, where an average grain diameter of a GeSbTe alloy after sintering is X (μm), an average grain diameter of carbon after the sintering is Y (μm), and a content of carbon is Z (at %).

Mass production of nanoscale thin layer is essential for industrial uses. Reel-to-reel sputtering method is an effective deposition means for producing nanoscale thin layers on a flexible substrate in a vacuum chamber. The present disclosure provides an apparatus for depositing a thin sputtered film on the flexible substrate. By way of example, the apparatus includes a reel-to-reel sputtering system including a deposition or processing chamber, one or more sputtering devices in the processing chamber, a mask device disposed in the processing chamber, and one or more mask supporters coupled to the mask device. Further, the sputtering operation occurs in the processing chamber when the one or more sputtering devices are in operation as a flexible substrate moves under the mask device from a first roller set to a second roller set.

Mass production of nanoscale thin layer is essential for industrial uses. Reel-to-reel sputtering method is an effective deposition means for producing nanoscale thin layers on a flexible substrate in a vacuum chamber. The present disclosure provides an apparatus for depositing a thin sputtered film on the flexible substrate. By way of example, the apparatus includes a reel-to-reel sputtering system including a deposition or processing chamber, one or more sputtering devices in the processing chamber, a mask device disposed in the processing chamber, and one or more mask supporters coupled to the mask device. Further, the sputtering operation occurs in the processing chamber when the one or more sputtering devices are in operation as a flexible substrate moves under the mask device from a first roller set to a second roller set.

Embodiments of process shield for use in process chambers are provided herein. In some embodiments, a process shield for use in a process chamber includes: an annular body having an upper portion and a lower portion extending downward and radially inward from the upper portion, wherein the upper portion includes a plurality of annular trenches on an upper surface thereof and having a plurality of slots disposed therebetween to fluidly couple the plurality of annular trenches, wherein one or more inlets extend from an outer surface of the annular body to an outermost trench of the plurality of annular trenches.

An ex situ physical vapor deposition (PVD) process kit conditioning apparatus configured to condition process kit components of a PVD substrate processing chamber, the ex situ PVD process kit conditioning apparatus comprising a chamber assembly, a central cathode assembly configured to mount one or more targets. The apparatus is configured to receive one or more components of a process kit of a PVD substrate processing chamber and the central cathode assembly is positioned and configured so that the apparatus deposits the defect reduction coating substantially uniformly on an inner surface of a process kit component of the PVD substrate processing chamber.