A part includes a base material, a colored layer on the base material, and a surface layer on the colored layer, wherein the colored layer contains Zr, and optionally, C and/or N, a ratio (H.sub.Zr .sub.oxide/H.sub.Zr) of a peak height derived from Zr oxide (H.sub.Zr oxide) to a peak height of Zr (H.sub.Zr) at an interface of the colored layer on the side of the surface layer is more than 0 and less than 4.5, the interface is a point where Zr is detected by sputtering the part from the side of the surface layer with an XPS depth direction analysis, and the ratio (H.sub.Zr oxide/H.sub.Zr) at a point where Ar sputtering is performed for 5 minutes from the interface of the colored layer on the side of the surface layer with the XPS depth direction analysis is 0 to less than 3. The surface layer is water-repellent and exhibits a sputtering time of 5 minutes or less

A part includes a base material, a colored layer, an intermediate layer, and a water-repellent-surface layer. The colored layer contains 35 at % to 99 at % of C, 0 at % to less than 40 at % of Cr, 0 at % to less than 15 at % of N, and more than 0 at % to less than 15 at % of O. The intermediate layer contains at least one metal atom selected from Cr, Zr, and Si; and an oxygen atom. The intermediate layer exhibits a sputtering time of 0.5 minutes or more to 9 minutes or less

A part includes a base material, a colored layer, an intermediate layer, and a water-repellent-surface layer. The colored layer contains 35 at % to 99 at % of C, 0 at % to less than 40 at % of Cr, 0 at % to less than 15 at % of N, and more than 0 at % to less than 15 at % of O. The intermediate layer contains at least one metal atom selected from Cr, Zr, and Si; and an oxygen atom. The intermediate layer exhibits a sputtering time of 0.5 minutes or more to 9 minutes or less

The invention relates to a method and a device to for applying a layer 64 to a body 60, 62, and to a coated body 60. The body 60, 62 is disposed in a vacuum chamber 12 and process gas is supplied. A plasma is generated in the vacuum chamber 12 by operating a cathode 30 by applying a cathode voltage V.sub.P with cathode pulses and by sputtering a target 32. A bias voltage V.sub.B is applied to the body 60, 62 so that charge carriers of the plasma are accelerated into the direction of the body 60, 62 and attached to its surface. In order to achieve favorable properties of the coating 64 in a controlled way, the time course of the bias voltage V.sub.B is varied during the coating duration D. In the coating 64 of the body 60, 62, the material of the layer 64 comprises proportions of a noble gas, the concentration of which in the layer 64 varies over the layer thickness.

Methods and apparatus for processing a substrate are provided. For example, a method includes sputtering a material from a target in a PVD chamber to form a material layer on a layer comprising a feature of the substrate, the feature having an opening width defined by a first sidewall and a second sidewall, the material layer having a greater lateral thickness at the top surface of the layer than a thickness on the first sidewall or the second sidewall within the feature, depositing additional material on the layer by biasing the layer with an RF bias at a low power, etching the material layer from the layer by biasing the layer with an RF bias at a high-power, and repeatedly alternating between the low power and the high-power at a predetermined frequency.

The present disclosure provides a method and system for controlling a deposition device, relating to the field of semiconductor technology. The method for controlling a deposition device is applied to the deposition device, the deposition device includes a reaction chamber and an electrostatic chuck arranged in the reaction chamber, the electrostatic chuck carries a wafer, and the controlling method includes: obtaining a pressure value between the wafer and the electrostatic chuck; and when the pressure value exceeds a preset range, the deposition device sending out an alarm signal, and executing a cleaning operation according to a use state of the electrostatic chuck.

The present disclosure provides a method and system for controlling a deposition device, relating to the field of semiconductor technology. The method for controlling a deposition device is applied to the deposition device, the deposition device includes a reaction chamber and an electrostatic chuck arranged in the reaction chamber, the electrostatic chuck carries a wafer, and the controlling method includes: obtaining a pressure value between the wafer and the electrostatic chuck; and when the pressure value exceeds a preset range, the deposition device sending out an alarm signal, and executing a cleaning operation according to a use state of the electrostatic chuck.

In a general aspect, a ceramic thin film with nanotwinned regions at a tunable volume fraction is manufactured. In some aspects, a method for manufacturing a ceramic thin film on a surface of a substrate in an evacuated chamber is disclosed. The ceramic thin film includes crystalline grains; and each of the crystalline grains includes one or more nanotwinned regions. The one or more nanotwinned regions have a volume fraction in a range of 30-80% of the ceramic thin film. The ceramic thin film comprises titanium, nitrogen, and boron. A plurality of targets including a plurality of sputtering materials is prepared. A gas atmosphere in the evacuated chamber is formed. Electric power is supplied to the plurality of targets to cause co-sputtering of the plurality of sputtering materials to form the ceramic thin film with the one or more nanotwinned regions.

A brake disk or drum has at least one working surface which opposes a braking member such as a brake pad or shoe. A plurality of spaced, raised island formations are provided across the working surface, with channels extending between the island formations. Each raised island formation has an outer surface which contacts a brake pad or brake shoe during braking.

In some implementations of the current subject matter, a brake rotor can include a supporting layer applied to a friction surface of a brake rotor substrate, which can optionally include cast iron, and a coating applied over the supporting layer. The supporting layer can include a preparatory metal, and the coating can impart wear and corrosion resistant properties to the friction surface. Related systems, methods, articles of manufacture, and the like are disclosed.