Embodiments of process kits are provided herein. In some embodiments, a process kit, includes: a deposition ring configured to be disposed on a substrate support, the deposition ring comprising: an annular band having an upper surface and a lower surface, the lower surface including a step between a radially inner portion and a radially outer portion, the step extending downward from the radially inner portion to the radially outer portion; an inner lip extending upwards from the upper surface of the annular band and adjacent an inner surface of the annular band, and wherein an outer surface of the inner lip extends radially outward and downward from an upper surface of the inner lip to the upper surface of the annular band; a channel disposed radially outward of the annular band; and an outer lip extending upwardly and disposed radially outward of the channel.

A film forming apparatus for forming a metal oxide film on a substrate, includes: a substrate support part configured to support the substrate; a heating mechanism configured to heat the substrate supported by the substrate support part; a processing container in which the substrate support part is provided; a holder configured to hold a metal material target inside the processing container and connected to a power source; a gas supply part configured to supply an oxygen gas into the processing container; and a controller, wherein the controller is configured to control the heating mechanism, the power source, and the gas supply part so as to execute alternately and repeatedly: forming a predetermined film on the substrate inside the processing container by reactive sputtering in a metal mode; and forming a target metal oxide film by causing the predetermined film to react with an oxygen gas inside the processing container.

A film forming apparatus for forming a metal oxide film on a substrate, includes: a substrate support part configured to support the substrate; a heating mechanism configured to heat the substrate supported by the substrate support part; a processing container in which the substrate support part is provided; a holder configured to hold a metal material target inside the processing container and connected to a power source; a gas supply part configured to supply an oxygen gas into the processing container; and a controller, wherein the controller is configured to control the heating mechanism, the power source, and the gas supply part so as to execute alternately and repeatedly: forming a predetermined film on the substrate inside the processing container by reactive sputtering in a metal mode; and forming a target metal oxide film by causing the predetermined film to react with an oxygen gas inside the processing container.

Objects of the present invention consist in achievement of both of elongation of life of a sputtering target as well as uniformity of a thickness of a resulting thin coating layer formed on a substrate during the period. The present invention provides a sputtering target comprising a target material, which is characterized in that the target material has a sputtering surface having a first area placed at the center, which is circular and flat; and a second area placed outside of the first area and concentrically with the first area, which has a ring shape, wherein the first area is positioned at a location lower than that of the second area by 15% of thickness of the second area at most, and the first area has a diameter which is ranging from 60% to 80% of a circumferential diameter of the sputtering surface.

The present disclosure provides a thin-film-deposition equipment with shielding device, which includes a reaction chamber, a carrier and a shielding device. The shielding device includes a first-carry arm, a second-carry arm, a first-shield member, a second-shield member and a driver. The driver interconnects the first-carry arm and the second first-carry arm, for driving and swinging the first-shield member and the second-shield member to move in opposite directions via the first-carry arm and the second first-carry arm. During a cleaning process, the driver swings the shield members toward each other into a shielding state for covering the carrier, such that to prevent polluting the carrier during the process of cleaning the thin-film-deposition equipment.

The present disclosure provides a thin-film-deposition equipment with shielding device, which includes a reaction chamber, a carrier and a shielding device. The shielding device includes a first-carry arm, a second-carry arm, a first-shield member, a second-shield member and a driver. The driver interconnects the first-carry arm and the second first-carry arm, for driving and swinging the first-shield member and the second-shield member to move in opposite directions via the first-carry arm and the second first-carry arm. During a cleaning process, the driver swings the shield members toward each other into a shielding state for covering the carrier, such that to prevent polluting the carrier during the process of cleaning the thin-film-deposition equipment.

A sputter deposition apparatus including: a plasma generation arrangement arranged to provide single plasma for sputter deposition of target material within a sputter deposition zone; a conveyor system arranged to convey a substrate through the sputter deposition zone in a conveyance direction; and one or more target support assemblies arranged to support one or more targets in the sputter deposition zone so as to provide for sputter deposition of the target material on the substrate utilising the plasma such that as the substrate is conveyed through the sputter deposition zone in use there is deposited: a first stripe on the substrate; and a second stripe on the substrate. The first stripe includes at least one of: a different density of the target material or a different composition of the target material than the second stripe.

The present invention provides a method for manufacturing a thin film foil, wherein a metal thin film layer is formed on a base substrate through a vacuum deposition process to form an ultra-thin film foil having a thickness of 5 μm or less, preferably 2 μm or less. The provided method for manufacturing a thin film foil comprises the steps of: preparing a base substrate having release properties; preparing a metal raw material; vacuum-depositing the metal raw material on the base substrate to form a metal layer on the base substrate; and separating the base substrate from the metal layer to form a thin film foil, wherein one of a BeCu alloy, a Cu—Ag—Cr ternary alloy, an Ag alloy, a CuMo alloy, and a CuFeP alloy is prepared as the metal raw material.

The present invention provides a method for manufacturing a thin film foil, wherein a metal thin film layer is formed on a base substrate through a vacuum deposition process to form an ultra-thin film foil having a thickness of 5 μm or less, preferably 2 μm or less. The provided method for manufacturing a thin film foil comprises the steps of: preparing a base substrate having release properties; preparing a metal raw material; vacuum-depositing the metal raw material on the base substrate to form a metal layer on the base substrate; and separating the base substrate from the metal layer to form a thin film foil, wherein one of a BeCu alloy, a Cu—Ag—Cr ternary alloy, an Ag alloy, a CuMo alloy, and a CuFeP alloy is prepared as the metal raw material.

graphite composite laminated heat-dissipating structure and a manufacturing method thereof are disclosed. The structure includes a metal substrate and a graphite heat-dissipating layer. The metal substrate has a first surface having a roughness ranging between 0.01 and 10 μm. The graphite heat-dissipating layer is composed of pure graphite and is directly formed on the first surface by means of physical vapor deposition using a carbon sputtering target. The graphite heat-dissipating layer has a thickness ranging between 0.05 and 2 μm. The manufacturing method includes S1: directly forming a graphite heat-dissipating layer on a first surface of a metal substrate by means of physical vapor deposition using a carbon sputtering target after the metal substrate has received plasma treatment or infrared heating; and S2: stopping the physical vapor deposition when the graphite heat-dissipating layer has a thickness ranging between 0.05 and 2 μm.