Interconnect structures and methods and apparatuses for forming the same are disclosed. In an embodiment, a method includes supplying a process gas to a process chamber; igniting the process gas into a plasma in the process chamber; reducing a pressure of the process chamber to less than 0.3 mTorr; and after reducing the pressure of the process chamber, depositing a conductive layer on a substrate in the process chamber.

Embodiments of the present disclosure provide a substrate processing system. In one embodiment, the system includes a chamber, a target disposed within the chamber, a magnetron disposed proximate the target, a pedestal disposed within the chamber, and a first gas injector disposed at a sidewall of the chamber, the first gas injector having a movable gas outlet.

Methods and apparatus for processing substrates are provided herein. For example, a magnet to target spacing system configured for use with an apparatus for processing a substrate comprises a sensor configured to provide a signal corresponding to a distance between a front of a magnet and a back of a target while rotating the magnet with respect to the target and a magnet controller configured to control the distance between the front of the magnet and the back of the target based upon the signal provided by the sensor.

Analyte sensors and methods for fabricating analyte sensors are provided. In an exemplary embodiment, a method for fabricating a planar flexible analyte sensor includes sputtering platinum onto a polyester base layer to form a layer of platinum. The method includes patterning the layer of platinum to form working electrodes and additional electrodes. Further, the method includes forming an insulating dielectric layer over the base layer, wherein the insulating dielectric layer is formed with openings exposing portions of the working electrodes and portions of the additional electrodes. Also, the method includes partially singulating individual sensors from the base layer, wherein each individual sensor is connected to the base layer by a tab. The method further includes depositing an enzyme layer over the exposed portions of the working electrodes and coating the working electrodes with a glucose limiting membrane.

Analyte sensors and methods for fabricating analyte sensors are provided. In an exemplary embodiment, a method for fabricating a planar flexible analyte sensor includes sputtering platinum onto a polyester base layer to form a layer of platinum. The method includes patterning the layer of platinum to form working electrodes and additional electrodes. Further, the method includes forming an insulating dielectric layer over the base layer, wherein the insulating dielectric layer is formed with openings exposing portions of the working electrodes and portions of the additional electrodes. Also, the method includes partially singulating individual sensors from the base layer, wherein each individual sensor is connected to the base layer by a tab. The method further includes depositing an enzyme layer over the exposed portions of the working electrodes and coating the working electrodes with a glucose limiting membrane.

Physical vapor deposition target assemblies and methods of manufacturing such target assemblies are disclosed. An exemplary target assembly comprises a flow pattern including a plurality of arcs and bends fluidly connected to an inlet end and an outlet end.

There is provided a film forming apparatus, including: a processing chamber having a processing space in which a film forming process is performed on a substrate; a substrate support part configured to support the substrate inside the processing chamber; at least one sputtering particle emission part including a target and configured to emit sputtering particles to the substrate from the target; and at least one etching particle emission part configured to emit etching particles having an etching action with respect to the substrate, wherein the sputtering particles emitted from the at least one sputtering particle emission part are deposited on the substrate to form a film, and a portion of the film is etched by the etching particles emitted from the at least one etching particle emission part.

There is provided a film forming apparatus, including: a processing chamber having a processing space in which a film forming process is performed on a substrate; a substrate support part configured to support the substrate inside the processing chamber; at least one sputtering particle emission part including a target and configured to emit sputtering particles to the substrate from the target; and at least one etching particle emission part configured to emit etching particles having an etching action with respect to the substrate, wherein the sputtering particles emitted from the at least one sputtering particle emission part are deposited on the substrate to form a film, and a portion of the film is etched by the etching particles emitted from the at least one etching particle emission part.

A method includes providing a substrate including mandrels of a first material positioned on an underlying layer. Each of the mandrels includes a first sidewall and an opposing second sidewall. The method further includes forming sidewall spacers made of a second material and including a first sidewall spacer abutting each respective first sidewall and a second sidewall spacer abutting each respective second sidewall. The mandrels extend above top surfaces of the sidewall spacers. The method also includes forming first capped sidewall spacers by depositing a third material on the first sidewall spacers without depositing on the second sidewall spacers, forming second capped sidewall spacers by depositing a fourth material on the second sidewall spacers without depositing on the first sidewall spacers, and selectively removing at least one of the first material, the second material, the third material, and the fourth material to uncover an exposed portion of the underlying layer.

A method includes providing a substrate including mandrels of a first material positioned on an underlying layer. Each of the mandrels includes a first sidewall and an opposing second sidewall. The method further includes forming sidewall spacers made of a second material and including a first sidewall spacer abutting each respective first sidewall and a second sidewall spacer abutting each respective second sidewall. The mandrels extend above top surfaces of the sidewall spacers. The method also includes forming first capped sidewall spacers by depositing a third material on the first sidewall spacers without depositing on the second sidewall spacers, forming second capped sidewall spacers by depositing a fourth material on the second sidewall spacers without depositing on the first sidewall spacers, and selectively removing at least one of the first material, the second material, the third material, and the fourth material to uncover an exposed portion of the underlying layer.