Methods for making solid-state laminate electrode assemblies include methods of forming a solid electrolyte interphase (SEI) by ion implanting nitrogen and/or phosphorous into the glass surface by ion implantation.

An apparatus for sputter deposition of material on a substrate. The apparatus includes a deposition chamber and a cathode array mounted in the deposition chamber. The array has three or more rotating cathodes. Each cathode has a cylindric target of equal target length L.sub.T and a magnetic system. The cathodes are spaced from one another such that their longitudinal axes Y.sub.Cj are arranged parallel to each other, in a distance T.sub.SD from a substrate plane S, and spaced apart along a projection of a substrate axis X in a distance T.sub.TT, whereat each cathode of the cathode array includes a magnetic system. The magnetic system of at least one cathode is swivel mounted round respective cathode axis Y.sub.Cj to swivel the magnetic system into and out of a swivel plane P.sub.TS. A pedestal is designed to support at least one substrate of maximal dimensions x*y to be coated in a static way. The pedestal is positioned in the deposition chamber in front of and centered with reference to the cathode array. At least one pulsed power supply is configured for supplying and controlling a power to at least one of the cathodes.

A coated tool of the present invention includes a base material and a hard coating film on the base material. The hard coating film is a nitride or carbonitride containing aluminum (Al) of 65 atomic % or more 90 atomic % or less, titanium (Ti) of 10 atomic % or more 35 atomic % or less, a total of aluminum (Al) and titanium (Ti) of 85 atomic % or more, and argon (Ar) of 0.20 atomic % or less. The hard coating film satisfies a relationship of Ih×100/Is≤12 when a peak intensity of a (010) plane of AlN of a hexagonal close-packed structure is Ih and a sum of peak intensities due to predetermined nine crystal planes of TiN and AlN is Is in an intensity profile obtained from a selected area diffraction pattern of a transmission electron microscope.

The present invention chiefly aims to provide a new API particle in which a metal or the like is coated on the API itself of a pharmaceutical solid dosage form.

The present invention includes, for example, a coated API particle, wherein the surface of an API particle is coated with a metal or a metal oxide (e.g., iron oxide) by sputter deposition, and a process for manufacturing a pharmaceutical solid dosage form (e.g., tablet) using the coated API particles.

According to the present invention, for example, it is possible to improve the photostability of an API itself or of pharmaceutical solid dosage forms produced with the API.

In some implementations, an optical interference filter includes a substrate; and a set of layers that are disposed on the substrate. The set of layers includes a first subset of layers, wherein the first subset of layers comprises an aluminum nitride (AlN) material; and a second subset of layers, wherein the second subset of layers comprises a hydrogenated silicon (Si:H) material.

An apparatus includes a printed circuit board (PCB), a power component disposed on the PCB, the power component to generate heat, and a multilayered coating disposed over the power component and at least a portion of the PCB to dissipate heat from the power component, the multilayered including: an electrical insulation layer comprising a non-polar compound and disposed on the power component and the at least a portion of the PCB; a chromium layer disposed on the electrical insulation layer; and a copper layer disposed on the chromium layer that is at least 10 microns (μm) thick, the copper layer conformally adhered to a top of the power component and to the PCB.

An apparatus includes a printed circuit board (PCB), a power component disposed on the PCB, the power component to generate heat, and a multilayered coating disposed over the power component and at least a portion of the PCB to dissipate heat from the power component, the multilayered including: an electrical insulation layer comprising a non-polar compound and disposed on the power component and the at least a portion of the PCB; a chromium layer disposed on the electrical insulation layer; and a copper layer disposed on the chromium layer that is at least 10 microns (μm) thick, the copper layer conformally adhered to a top of the power component and to the PCB.

Various embodiments herein relate to carriers for supporting one or more substrate as the substrates are passed through a processing apparatus. In many cases, the substrates are oriented in a vertical manner. The carrier may include a frame and vertical support bars that secure the glass to the frame. The carrier may lack horizontal support bars. The carrier may allow for thermal expansion and contraction of the substrates, without any need to provide precise gaps between adjacent pairs of substrates. The carriers described herein substantially reduce the risk of breaking the processing apparatus and substrates, thereby achieving a more efficient process. Certain embodiments herein relate to methods of loading substrates onto a carrier.

Various embodiments herein relate to carriers for supporting one or more substrate as the substrates are passed through a processing apparatus. In many cases, the substrates are oriented in a vertical manner. The carrier may include a frame and vertical support bars that secure the glass to the frame. The carrier may lack horizontal support bars. The carrier may allow for thermal expansion and contraction of the substrates, without any need to provide precise gaps between adjacent pairs of substrates. The carriers described herein substantially reduce the risk of breaking the processing apparatus and substrates, thereby achieving a more efficient process. Certain embodiments herein relate to methods of loading substrates onto a carrier.

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.