To provide a manufacturing method of a laminate body, including: a step of forming onto a supporting body a curable resin composition layer formed from a thermosetting resin composition to obtain a curable resin composition layer with a supporting body; a step of laminating the curable resin composition onto a substrate on a curable resin composition layer forming surface side to obtain a pre-cured composite with a supporting body formed from a substrate and a curable resin composition layer with a supporting body; a step of performing a first heating of the pre-cured composite and thermally curing the curable resin composition layer to obtain a cured composite with a supporting body formed from a substrate and a cured resin layer with a supporting body; a step of performing hole punching from the supporting body side of the cured composite with a supporting body to form a via hole in the cured resin layer; step of removing resin residue in the via hole of the cured composite with a supporting body; a step of peeling the supporting body from the cured composite with a supporting body to obtain a cured composite formed from a substrate and a cured resin layer, and a step of forming a dry plated conductor layer by dry plating on an inner wall surface of the via hole of the cured composite and on the cured resin layer.

To provide a manufacturing method of a laminate body, including: a step of forming onto a supporting body a curable resin composition layer formed from a thermosetting resin composition to obtain a curable resin composition layer with a supporting body; a step of laminating the curable resin composition onto a substrate on a curable resin composition layer forming surface side to obtain a pre-cured composite with a supporting body formed from a substrate and a curable resin composition layer with a supporting body; a step of performing a first heating of the pre-cured composite and thermally curing the curable resin composition layer to obtain a cured composite with a supporting body formed from a substrate and a cured resin layer with a supporting body; a step of performing hole punching from the supporting body side of the cured composite with a supporting body to form a via hole in the cured resin layer; step of removing resin residue in the via hole of the cured composite with a supporting body; a step of peeling the supporting body from the cured composite with a supporting body to obtain a cured composite formed from a substrate and a cured resin layer, and a step of forming a dry plated conductor layer by dry plating on an inner wall surface of the via hole of the cured composite and on the cured resin layer.

A process of forming a thin film photoactive layer of an optoelectronic device comprising: providing a substrate having a surface comprising or coated with a metal M selected from at least one of Pb, Sn, Ge, Si, Ti, Bi, or In; and converting the metal surface or metal coating of the substrate to a perovskite layer.

A process of forming a thin film photoactive layer of an optoelectronic device comprising: providing a substrate having a surface comprising or coated with a metal M selected from at least one of Pb, Sn, Ge, Si, Ti, Bi, or In; and converting the metal surface or metal coating of the substrate to a perovskite layer.

A multi-deposition chamber apparatus is provided that includes a first deposition chamber that includes a substrate holder, a retractable sputter gun, a gate valve, an output port, a retractable chamber separator, a gas input port, a gas output port, and an electron cyclotron resonance plasma source, where the retractable chamber separator is configured to selectively segment the first deposition chamber to form a second deposition chamber, where the second deposition chamber comprises the substrate holder, the gas input port, the gas output port and the electron cyclotron resonance plasma source.

A film forming apparatus for forming a thin film on a flexible substrate. The film forming apparatus forms a thin film on a flexible substrate under vacuum. The film forming apparatus includes a first zone into which a first gas is introduced and a second zone into which a second gas is introduced in a vacuum chamber. Zone separators have openings through which the flexible substrate passes. The film forming apparatus includes a mechanism that reciprocates the flexible substrate between the zones. Further, the film forming apparatus includes a mechanism that supplies a raw material gas containing metal or silicon to the first zone, and a mechanism that performs sputtering of a material containing metal or silicon as a target material in the second zone.

A film forming apparatus for forming a thin film on a flexible substrate. The film forming apparatus forms a thin film on a flexible substrate under vacuum. The film forming apparatus includes a first zone into which a first gas is introduced and a second zone into which a second gas is introduced in a vacuum chamber. Zone separators have openings through which the flexible substrate passes. The film forming apparatus includes a mechanism that reciprocates the flexible substrate between the zones. Further, the film forming apparatus includes a mechanism that supplies a raw material gas containing metal or silicon to the first zone, and a mechanism that performs sputtering of a material containing metal or silicon as a target material in the second zone.

A laminate that improves barrier properties of an atomic layer deposition film in spite of use of a substrate made of a polymer material, and provides a gas barrier film and a method of producing the same. The laminate includes: a substrate made a polymer material; an undercoat layer disposed on at least part of a surface of the substrate and made up of an inorganic material containing Ta; and an atomic layer deposition film disposed so as to cover a surface of the undercoat layer.

A sputtering target and/or a coil disposed at a periphery of a plasma-generating region for confining plasma are provided. The target and/or coil has a surface to be eroded having a hydrogen content of 500 μL/cm.sup.2 or less. In dealing with reduction in hydrogen content of the surface of the target and/or coil, a process of producing the target and/or coil, in particular, conditions for heating the surface of the target and/or coil, which is believed to be a cause of hydrogen occlusion, are appropriately regulated. As a result, hydrogen occlusion at the surface of the target can be reduced, and the degree of vacuum during sputtering can be improved. Thus, a target and/or coil is provided that has a uniform and fine structure, makes plasma stable, and allows a film to be formed with excellent uniformity. A method of producing the target and/or the coil is also provided.

A sputtering target and/or a coil disposed at a periphery of a plasma-generating region for confining plasma are provided. The target and/or coil has a surface to be eroded having a hydrogen content of 500 μL/cm.sup.2 or less. In dealing with reduction in hydrogen content of the surface of the target and/or coil, a process of producing the target and/or coil, in particular, conditions for heating the surface of the target and/or coil, which is believed to be a cause of hydrogen occlusion, are appropriately regulated. As a result, hydrogen occlusion at the surface of the target can be reduced, and the degree of vacuum during sputtering can be improved. Thus, a target and/or coil is provided that has a uniform and fine structure, makes plasma stable, and allows a film to be formed with excellent uniformity. A method of producing the target and/or the coil is also provided.