The tantalum-doped molybdenum disulfide/tungsten disulfide (MoS.sub.2/WS.sub.2) multi-layer film includes a titanium transition layer, a titanium/tantalum/molybdenum disulfide/tungsten disulfide (Ti/Ta/MoS.sub.2/WS.sub.2) multi-layer gradient transition layer, and a tantalum-doped MoS.sub.2/WS.sub.2 multi-layer layer which are successively laminated in a thickness direction. The preparation method includes: successively depositing the titanium transition layer, the Ti/Ta/MoS.sub.2/WS.sub.2 multi-layer gradient transition layer, and the tantalum-doped MoS.sub.2/WS.sub.2 multi-layer layer on the surface of a matrix by adopting a magnetron sputtering technology to obtain the tantalum-doped MoS.sub.2/WS.sub.2 multi-layer film. The tantalum-doped MoS.sub.2/WS.sub.2 multi-layer film has good matrix binding strength, hardness and elasticity modulus, good friction and abrasion performance, good temperature self-adopting performance, heat and humidity resistance, and high temperature oxidization resistance under an atmospheric environment at different temperatures, and can meet the requirements of stable lubrication and long-life service of aerospace vehicles.

A method for forming a layer includes following operations. A workpiece is received in an apparatus for deposition. The apparatus for deposition includes a chamber, a pedestal disposed in the chamber to accommodate the workpiece, and a ring disposed on the pedestal. The ring includes a ring body having a first top surface and a second top surface and a barrier structure disposed between the first top surface and the second top surface. A vertical distance is defined by a top surface of the barrier structure and a top surface of the workpiece. The vertical distance is between approximately 0 mm and approximately 50 mm. A target disposed in the apparatus for deposition is sputtered. A sputtered material is deposited onto a top surface of the workpiece to form a layer. The barrier structure alters an electrical density distribution during the depositing the sputter material.

A method for preparing bismuth oxide nanowire films by heating in an upside down position includes: washing a substrate, and fixing the substrate to a substrate support in a magnetron sputtering system in a position where an electrically conductive surface of the substrate faces downwards; placing a bismuth target, which is adhered to a copper backing plate, on a sputtering head in the magnetron sputtering system; performing direct current magnetron sputtering to form a bismuth film on the electrically conductive surface of the substrate; and regulating a heating temperature to maintain the bismuth film in a semi-molten state, and providing a predetermined oxygen gas concentration to form the bismuth oxide nanowire film.

Apparatus and methods for controlling plasma profiles during PVD deposition processes are disclosed. Some embodiments utilize EM coils placed above the target to control the plasma profile during deposition.

According to the present invention, a method for manufacturing a rare earth magnet that is capable of manufacturing a high-performance rare earth magnet with stable quality in large amount by the grain boundary diffusion method utilizing a film formed by the physical vapor phase deposition method is provided.

A glazing includes a glass substrate on which is deposited a coating including at least one layer, the layer being formed from a material including metal nanoparticles dispersed in an inorganic matrix of an oxide, in which the metal nanoparticles are made of a metal chosen from the group formed by silver, gold, platinum, copper and nickel or of an alloy formed from at least two of these metals, in which the matrix including an oxide of at least one element chosen from the group of titanium, silicon and zirconium and in which the atomic ratio M/Me in the material is less than 1.5, M representing all atoms of the elements of the group of titanium, silicon and zirconium present in the layer and Me representing all of the atoms of the metals of the group formed by silver, gold, platinum, copper and nickel present in the layer.

An electronic device and a manufacturing method thereof are provided. The electronic device includes an array substrate, which includes a substrate, a first conductive layer, a first insulating layer, a second conductive layer, and a second insulating layer. The substrate has a substrate surface. The first conductive layer is located on the substrate surface. The first insulating layer is located on the first conductive layer. The second conductive layer is located on the first insulating layer and includes a first sputtering layer, a second sputtering layer, and a third sputtering layer. The second insulating layer is located on the second conductive layer. The second sputtering layer is located between the first and third sputtering layers, and includes a first metal element. The first sputtering layer includes the first metal element and a second metal element. The third sputtering layer includes the first metal element and a third metal element.

An etching method of the invention includes: a resist pattern-forming step of forming a resist layer on a target object, the resist layer being formed of a resin, the resist layer having a resist pattern; an etching step of etching the target object via the resist layer having the resist pattern; and a resist protective film-forming step of forming a resist protective film on the resist layer. The etching step is repetitively carried out multiple times. After the etching steps are repetitively carried out multiple times, the resist protective film-forming step is carried out.

An etching method of the invention includes: a resist pattern-forming step of forming a resist layer on a target object, the resist layer being formed of a resin, the resist layer having a resist pattern; an etching step of etching the target object via the resist layer having the resist pattern; and a resist protective film-forming step of forming a resist protective film on the resist layer. The etching step is repetitively carried out multiple times. After the etching steps are repetitively carried out multiple times, the resist protective film-forming step is carried out.

A vacuum processing apparatus includes: a stage on which a substrate is placed; and a shutter configured to be able to move between a shielding position at which the stage is covered and a retracted position that is retracted from the shielding position, wherein the shutter arranged at the shielding position forms a processing space between the shutter and the stage, and includes: a gas supplier configured to supply a gas into the processing space; and a gas exhauster provided closer to a center side of the processing space than the gas supplier and configured to exhaust the gas from the processing space.