A novel oxide semiconductor, a novel oxynitride semiconductor, a transistor including them, or a novel sputtering target is provided. A composite target includes a first region and a second region. The first region includes an insulating material and the second region includes a conductive material. The first region and the second region each include a microcrystal whose diameter is greater than or equal to 0.5 nm and less than or equal to 3 nm or a value in the neighborhood thereof. A semiconductor film is formed using the composite target.

An electrically and magnetically enhanced ionized physical vapor deposition (I-PVD) magnetron apparatus and method is provided for sputtering material from a cathode target on a substrate, and in particular, for sputtering ceramic and diamond-like coatings. The electrically and magnetically enhanced magnetron sputtering source has unbalanced magnetic fields that couple the cathode target and additional electrode together. The additional electrode is electrically isolated from ground and connected to a power supply that can generate positive, negative, or bipolar high frequency voltages, and is preferably a radio frequency (RF) power supply. RF discharge near the additional electrode increases plasma density and a degree of ionization of sputtered material atoms.

The color of an electrochromic stack in a tinted state may be modified to achieve a desired color target by utilizing various techniques alone or in combination. A first approach generally involves changing a coloration efficiency of a WO.sub.x electrochromic (EC) layer by lowering a sputter temperature to achieve a WO.sub.x microstructural change in the EC layer. A second approach generally involves utilizing a dopant (e.g., Mo, Nb, or V) to improve the neutrality of the tinted state of WO.sub.x (coloration efficiency changes). A third approach generally involves tailoring a thickness of the WO.sub.x layer to tune the color of the tinted stack.

A coated tool according to the present disclosure includes a base member and a coating layer located on the base member. The coating layer includes a first peak located in a range of 0° to 90° and a second peak located at a higher angle side than the first peak in a distribution of X-ray intensity indicated at α axis of a pole figure, the X-ray intensity regarding a plane of the cubic crystal. The coating layer further includes a valley part between the first peak and the second peak, and the valley part includes the X-ray intensity smaller than the X-ray intensity at each of the first peak and the second peak.

A coated tool according to the present disclosure includes a base member and a coating layer located on the base member. The coating layer includes a first peak located in a range of 0° to 90° and a second peak located at a higher angle side than the first peak in a distribution of X-ray intensity indicated at α axis of a pole figure, the X-ray intensity regarding a plane of the cubic crystal. The coating layer further includes a valley part between the first peak and the second peak, and the valley part includes the X-ray intensity smaller than the X-ray intensity at each of the first peak and the second peak.

A coated tool according to the present disclosure includes a base member and a coating layer located on the base member. The coating layer includes a first peak located in a range of 15° to 30° and a second peak located in a range of 60° to 75° in a distribution of X-ray intensity indicated at a axis of a pole figure, the X-ray intensity regarding a plane of the cubic crystal. The coating layer includes a valley part between the first peak and the second peak, and the valley part includes the X-ray intensity smaller than the X-ray intensity at each of the first peak and the second peak. The X-ray intensity at the first peak is 0.7 times or greater of the X-ray intensity at the second peak.

A coated tool according to the present disclosure includes a base member and a coating layer located on the base member. The coating layer includes a first peak located in a range of 15° to 30° and a second peak located in a range of 60° to 75° in a distribution of X-ray intensity indicated at a axis of a pole figure, the X-ray intensity regarding a plane of the cubic crystal. The coating layer includes a valley part between the first peak and the second peak, and the valley part includes the X-ray intensity smaller than the X-ray intensity at each of the first peak and the second peak. The X-ray intensity at the first peak is 0.7 times or greater of the X-ray intensity at the second peak.

Provided is a MgAl.sub.2O.sub.4 sintered body, which includes a relative density of the MgAl.sub.2O.sub.4 sintered body being 90% or higher, and an L* value in a L*a*b* color system being 90 or more. A method of producing a MgAl.sub.2O.sub.4 sintered body is characterized by that a MgAl.sub.2O.sub.4 powder is hot pressed at 1150 to 1300° C., and is thereafter subjected to atmospheric sintering at 1350° C. or higher. Embodiments of the present invention address the issue of providing a high density and white MgAl.sub.2O.sub.4 sintered body and a sputtering target using the sintered body, and a method of producing a MgAl.sub.2O.sub.4 sintered body.

Provided is a MgAl.sub.2O.sub.4 sintered body, which includes a relative density of the MgAl.sub.2O.sub.4 sintered body being 90% or higher, and an L* value in a L*a*b* color system being 90 or more. A method of producing a MgAl.sub.2O.sub.4 sintered body is characterized by that a MgAl.sub.2O.sub.4 powder is hot pressed at 1150 to 1300° C., and is thereafter subjected to atmospheric sintering at 1350° C. or higher. Embodiments of the present invention address the issue of providing a high density and white MgAl.sub.2O.sub.4 sintered body and a sputtering target using the sintered body, and a method of producing a MgAl.sub.2O.sub.4 sintered body.

A copper-based alloy sputtering target includes copper and a metal element selected from manganese, chromium, cobalt, aluminum, tin, titanium, and combinations thereof. Based on a total weight of the copper-based alloy sputtering target, copper is present in an amount of not less than 98 wt %, and the metal element is present in an amount ranging from 0.3 wt % to 2.0 wt %. The copper-based alloy sputtering target has an average value of Kernel Average Misorientation of not greater than 2° as determined by Electron Backscatter Diffraction, and an average value of Vickers hardness on a sputtering surface that ranges from 90 Hv to 120 Hv. A method for making the copper-based alloy sputtering target is also disclosed.