According to one embodiment, there is provided a substrate processing apparatus including a first electrode, a second electrode, a third electrode, a first power supply circuit, a second power supply circuit and a control line. The first electrode is arranged in a processing chamber, and on which a substrate can be placed. The second electrode faces the first electrode. The third electrode is arranged along a side wall in the processing chamber and facing the first electrode. The first power supply circuit is connected to the first electrode. The second power supply circuit is connected to the third electrode. The control line is connected to the first power supply circuit and the second power supply circuit.

According to one embodiment, there is provided a substrate processing apparatus including a first electrode, a second electrode, a third electrode, a first power supply circuit, a second power supply circuit and a control line. The first electrode is arranged in a processing chamber, and on which a substrate can be placed. The second electrode faces the first electrode. The third electrode is arranged along a side wall in the processing chamber and facing the first electrode. The first power supply circuit is connected to the first electrode. The second power supply circuit is connected to the third electrode. The control line is connected to the first power supply circuit and the second power supply circuit.

The present disclosure provides a thin-film-deposition equipment for detecting shielding mechanism, which includes a reaction chamber, a carrier, a shielding mechanism and two distance sensors. The carrier and the shielding mechanism is partially disposed within the reaction chamber. The shielding mechanism includes two shield unit and a driver. The driver interconnects and drives the two shield units to sway in opposite directions and into an open state and a shielding state. Each of the two shield unit is disposed with a reflective surface for each of the two distance sensors to respectively project optical beams onto and detect a distances therebetween when the two shield units are operated in the shielding state, such that to confirm that the shielding mechanism is in the shielding state.

The present disclosure provides a thin-film-deposition equipment for detecting shielding mechanism, which includes a reaction chamber, a carrier, a shielding mechanism and two distance sensors. The carrier and the shielding mechanism is partially disposed within the reaction chamber. The shielding mechanism includes two shield unit and a driver. The driver interconnects and drives the two shield units to sway in opposite directions and into an open state and a shielding state. Each of the two shield unit is disposed with a reflective surface for each of the two distance sensors to respectively project optical beams onto and detect a distances therebetween when the two shield units are operated in the shielding state, such that to confirm that the shielding mechanism is in the shielding state.

The invention relates to a method for producing a semi-transparent motor vehicle design element (3), comprising the following steps:

A providing a dimensionally stable, at least partially light-permeable substrate (1) which is heat-resistant for a temperature of at least 60° C., the substrate (1) having a front side (1a) and a rear side (1b),

B introducing the substrate (1) into a vacuum chamber (2) and applying a first metallic semi-transparent layer (L1) by means of a PVD process to the substrate (1) according to step a) which is situated in the vacuum chamber (2), and

C applying a light-impermeable cover layer (LD) to the front or rear side (1a, 1b) of the substrate (1), the light-impermeable cover layer (LD) containing at least one light-permeable opening (8) for reproducing at least one graphical symbol (SYM),

steps B and C being carried out such that light (LSQ) passing through the at least one opening (8) in the light-impermeable cover layer (LD) from the rear side (1b) towards the front side (1a) of the substrate (1) is incident on the first metallic semi-transparent layer (L1) and at least partially passes outwards through the first metallic semi-transparent layer (L1) in order to project the at least one graphical symbol (SYM) represented by the at least one opening (8).

Methods for manufacturing rotary target materials that allows a material to be cast in a melting zone of a casting vessel while the vessel is rotated such that a melting zone is below a casting zone. The vessel is sealed and the pressure inside the vessel is reduced and the exterior of the vessel is heated. The melting zone of the vessel is heated to a temperature that melts the material and releases any trapped gasses which can be pumped out using the vacuum pump. Once the melting zone and molten material have reached a specified temperature, outgassed, and the casting zone has reached a temperature to maximize adhesion and reduce voids and defects, the vessel is rotated until the melting zone is directly above the casting zone to transfer the material from the melting zone to the casting zone.

Provided is a sputtering target material having excellent crack resistance and a method of producing the same. Also provided is a sputtering target material and a method of producing the same. The sputtering target material is composed of an alloy consisting of B; one or more rare earth elements; and the balance consisting of Co and/or Fe and unavoidable impurities. The amount of B in the alloy is 15 at. % or more and 30 at. % or less. The one or more rare earth elements are selected from the group consisting of Pr, Sm, Gd, Tb, Dy, and Ho. The total amount of the one or more rare earth elements in the alloy is 0.1 at. % or more and 10 at. % or less.

A gold sputtering target is made of gold and inevitable impurities, and has a surface to be sputtered. In the gold sputtering target, an average value of Vickers hardness is 40 or more and 60 or less, and an average crystal grain size is 15 μm or more and 200 μm or less. A {110} plane of gold is preferentially oriented at the surface to be sputtered.

A gold sputtering target is made of gold and inevitable impurities, and has a surface to be sputtered. In the gold sputtering target, an average value of Vickers hardness is 40 or more and 60 or less, and an average crystal grain size is 15 μm or more and 200 μm or less. A {110} plane of gold is preferentially oriented at the surface to be sputtered.

Provided is a sputtering target which can lower a heat treatment temperature for ordering a Fe—Pt magnetic phase and can suppress generation of particles during sputtering. The sputtering target is a nonmagnetic material-dispersed sputtering target containing Fe, Pt and Ge. The sputtering target includes at least one magnetic phase satisfying a composition represented by (Fe.sub.1-αPt.sub.α).sub.1-βGe.sub.β, as expressed in an atomic ratio for Fe, Pt and Ge, in which α and β represent numbers meeting 0.35≤α≤0.55 and 0.05≤β≤0.2, respectively. The magnetic phase has a ratio (S.sub.Ge30mass %/S.sub.Ge) of 0.5 or less. The ratio (S.sub.Ge30mass %/S.sub.Ge) is an average area ratio of Ge-based alloy phases containing a Ge concentration of 30% by mass or more (S.sub.Ge30mass %) to an area ratio of Ge (S.sub.Ge) calculated from the entire composition of the sputtering target, in element mapping by EPMA of a polished surface obtained by polishing a cross section perpendicular to a sputtering surface of the sputtering target.