C23C14/34

ELECTROCHROMIC DEVICES
20230074776 · 2023-03-09 ·

Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer, which are in direct contact with one another. The interfacial region contains an ion conducting electronically insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices. In addition to the improved electrochromic devices and methods for fabrication, integrated deposition systems for forming such improved devices are also disclosed.

PULSED-DC POWER GENERATOR AND METHOD OF AUTOMATICALLY ADJUSTING ARC EXTINCTION PARAMETERS
20230126427 · 2023-04-27 ·

A pulsed-DC power generator is used to sputter a substrate in a chamber, and the power generator includes a first voltage source, a second voltage source, a switch unit, a control unit, and a detection unit. The control unit provides a first control signal to control the switching of the switch unit to integrate a first voltage of the first voltage source and a second voltage of the second voltage source into a pulse voltage. The control unit adjusts parameters of a first predetermined time period for arc extinction when the pulse voltage is in a working time period of the first voltage, and the number that a voltage value of the first voltage in a voltage variation to be higher than a range is higher than the number of occurrence.

METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE
20230130106 · 2023-04-27 ·

Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises supplying pulsed DC power to a target disposed in a processing volume of a processing chamber for depositing sputter material onto a substrate, during a pulse off time, determining if a reverse current is equal to or greater than at least one of a first threshold or a second threshold different from the first threshold, and if the reverse current is equal to or greater than the at least one of the first threshold or second threshold, generate a pulsed DC power shutdown response, and if the reverse current is not equal to or greater than the at least one of the first threshold or second threshold, continue supplying pulsed DC power to the target.

Sputtering apparatus
11473188 · 2022-10-18 · ·

A sputtering apparatus of the present invention is an apparatus performing deposition on a substrate to be processed using a sputtering method and includes a vacuum chamber, a target provided on a surface of a cathode provided in the vacuum chamber, a substrate holder provided in the vacuum chamber to face the target, and a swing unit that causes the substrate holder to be swingable with respect to the target. A swing region of the substrate to be processed in the substrate holder is set to be smaller than an erosion region of the target.

Apparatus for Temperature Control in a Substrate Processing Chamber

An adapter for a deposition chamber includes an adapter body extending longitudinally about a central axis between an upper side and lower side opposite the upper side. The adapter body has a central opening about the central axis. The adapter body has a radially outer portion having a connection surface on the lower side and a radially inner portion having a coolant channel and a stepped surface on the lower side. At least a portion of the coolant channel is spaced radially inwardly from a radially inner end of the connection surface. At least the portion of the coolant channel is disposed longitudinally below the connection surface between the connection surface and the stepped surface.

Apparatus for Temperature Control in a Substrate Processing Chamber

An adapter for a deposition chamber includes an adapter body extending longitudinally about a central axis between an upper side and lower side opposite the upper side. The adapter body has a central opening about the central axis. The adapter body has a radially outer portion having a connection surface on the lower side and a radially inner portion having a coolant channel and a stepped surface on the lower side. At least a portion of the coolant channel is spaced radially inwardly from a radially inner end of the connection surface. At least the portion of the coolant channel is disposed longitudinally below the connection surface between the connection surface and the stepped surface.

Coated tool and cutting tool including same
11471948 · 2022-10-18 · ·

A coated tool may include a base member and a coating layer located on the base member. The coating layer may include a first section located on the base member and a second section located on the first section. The first section may include an AlTi portion including aluminum and titanium, and an AlCr portion including aluminum and chromium, and each of the AlTi portion and the AlCr portion may be in contact with the base member. The second section may include a plurality of AlTi layers including aluminum and titanium, and a plurality of AlCr layers including aluminum and chromium, and the AlTi layers and the AlCr layers may be located alternately one upon another.

Coated tool and cutting tool including same
11471948 · 2022-10-18 · ·

A coated tool may include a base member and a coating layer located on the base member. The coating layer may include a first section located on the base member and a second section located on the first section. The first section may include an AlTi portion including aluminum and titanium, and an AlCr portion including aluminum and chromium, and each of the AlTi portion and the AlCr portion may be in contact with the base member. The second section may include a plurality of AlTi layers including aluminum and titanium, and a plurality of AlCr layers including aluminum and chromium, and the AlTi layers and the AlCr layers may be located alternately one upon another.

Deposition system with multi-cathode and method of manufacture thereof

A deposition system, and a method of operation thereof, includes: a cathode; a shroud below the cathode; a rotating shield below the cathode for exposing the cathode through the shroud and through a shield hole of the rotating shield; and a rotating pedestal for producing a material to form a carrier over the rotating pedestal, wherein the material having a non-uniformity constraint of less than 1% of a thickness of the material and the cathode having an angle between the cathode and the carrier.

Oriented electrical steel sheet and method for producing same

Provided are: an oriented electrical steel sheet having a high tension applied to a steel sheet and excellent adhesion to a film; and a method for producing the same. This oriented electrical steel sheet includes: a steel sheet; a film A containing a crystalline material disposed on the steel sheet; and a film B containing a vitreous material disposed on the film A, wherein an element profile, which is obtained by using a high-frequency glow discharge light-emission surface analysis method, in the direction from the film B to the steel sheet satisfies formulae (1) and (2). 0.35≤(t.sub.A/t.sub.Fe/2)≤0.75 . . . (1), 0.25≤(t.sub.A/2/t.sub.Fe/2)≤1.00 . . . (2), where t.sub.A represents the peak time of an alkali metal element profile, t.sub.A/2 represents the half time of an alkali metal.