The present disclosure is a substrate-processing chamber with a shielding mechanism, which includes a reaction chamber, a substrate carrier, a storage chamber and a shielding mechanism. The reaction chamber is connected to the storage chamber, the substrate carrier is within the reaction chamber. The shielding mechanism includes at least one guide unit, at least one connecting seat, a shield and at least one drive arm. The drive arm is connected to the shield for driving the shield to move between the storage chamber and the reaction chamber. During a deposition process, the drive arm drives the shield to move into the storage space. During a cleaning process, the drive arm moves the shield to move into the reaction chamber for prevent pollution to the substrate carrier.

The present disclosure is a substrate-processing chamber with a shielding mechanism, which includes a reaction chamber, a substrate carrier, a storage chamber and a shielding mechanism. The reaction chamber is connected to the storage chamber, the substrate carrier is within the reaction chamber. The shielding mechanism includes at least one guide unit, at least one connecting seat, a shield and at least one drive arm. The drive arm is connected to the shield for driving the shield to move between the storage chamber and the reaction chamber. During a deposition process, the drive arm drives the shield to move into the storage space. During a cleaning process, the drive arm moves the shield to move into the reaction chamber for prevent pollution to the substrate carrier.

A coated cutting tool includes a substrate of cemented carbide, cubic boron nitride (cBN) or cermet containing tungsten carbide hard grains and a tungsten carbide (WC) layer deposited immediately on top of the substrate surface. The tungsten carbide (WC) layer is a mixture or combination of hexagonal tungsten mono-carbide α-WC phase and cubic tungsten mono-carbide β-WC phase and unavoidable impurities.

A Cr—Si sintered body contains Cr and Si. The Cr—Si sintered body contains a crystalline CrSi.sub.2 phase and a crystalline Si phase. A content of the Si phase in the Cr—Si sintered body is 40% by mass or more. A relative density of the Cr—Si sintered body relative to a true density of the Cr—Si sintered body is 95% or more. The CrSi.sub.2 phase has an average crystal grain size of 40 μm or less, and the Si phase has an average crystal grain size of 30 μm or less. A total content of impurities in the Cr—Si sintered body is 200 ppm by mass or less, and the impurities are composed of at least one element selected from the group consisting of Mn, Fe, Mg, Ca, Sr, and Ba.

A semiconductor device includes a chip and an electrode that has a laminated structure including a Ti film, a TiN film, a TiAl alloy film and an Al-based metal film that are laminated in that order from the chip side.

A semiconductor device includes a chip and an electrode that has a laminated structure including a Ti film, a TiN film, a TiAl alloy film and an Al-based metal film that are laminated in that order from the chip side.

The invention relates to a motor vehicle headlamp (8) comprising a vehicle headlamp housing (9), an at least sectionally transparent cover pane (10) that closes the vehicle headlamp housing (9), a light source (11) that is accommodated in the vehicle headlamp housing (9) and serves for radiating light through the cover pane (10), and at least one motor vehicle design element (3) that is accommodated in the vehicle headlamp housing (9), wherein the at least one motor vehicle design element (3) comprises a dimensionally stable substrate (1) with at least one coated side.

The invention relates to a motor vehicle headlamp (8) comprising a vehicle headlamp housing (9), an at least sectionally transparent cover pane (10) that closes the vehicle headlamp housing (9), a light source (11) that is accommodated in the vehicle headlamp housing (9) and serves for radiating light through the cover pane (10), and at least one motor vehicle design element (3) that is accommodated in the vehicle headlamp housing (9), wherein the at least one motor vehicle design element (3) comprises a dimensionally stable substrate (1) with at least one coated side.

The present invention relates to an antimicrobial plastic film and a winding coating method, the antimicrobial plastic film includes a plastic film main part, wherein a surface of said plastic film main part is coated with an antimicrobial coating, the antimicrobial coating includes a bonding layer, a carrier layer, a first antimicrobial layer and a second antimicrobial layer, the winding coating method includes the steps of vacuum treatment , applying a bonding layer, applying a carrier layer, applying a first antimicrobial layer, and applying a second antimicrobial layer

Methods and apparatus for processing a substrate are provided herein. For example, a processing chamber for processing a substrate comprises a sputtering target, a chamber wall at least partially defining an inner volume within the processing chamber and connected to ground, a power source comprising an RF power source, a process kit surrounding the sputtering target and a substrate support, an auto capacitor tuner (ACT) connected to ground and the sputtering target, and a controller configured to energize the cleaning gas disposed in the inner volume of the processing chamber to create the plasma and tune the sputtering target using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit during the etch process to remove sputtering material from the process kit, wherein the predetermined potential difference is based on a resonant point of the ACT.