A method of forming an optical device is provided. The method includes disposing an optical device substrate on a substrate support in a process volume of a process chamber, the optical device substrate having a first surface; and forming a first optical layer on the first surface of the optical device substrate during a first time period when the optical device substrate is on the substrate support, wherein the first optical layer comprises one or more metals in a metal-containing oxide, a metal-containing nitride, or a metal-containing oxynitride, and the first optical layer is formed without an RF-generated plasma over the optical device substrate; and forming a second optical layer with an RF-generated plasma over the first optical layer during a second time period when the optical device substrate is on the substrate support.

Disclosed herein are systems, devices, and methods for a magnet system for a sputtering device. The disclosed magnet system may include a housing having a housing interior. The magnet system may also include a magnet holder disposed in the housing interior and supported by the housing in a preferably stationary manner. The magnet system may also include a dehumidifying device adjacent to or disposed in the housing interior for drying the housing interior.

The present invention resides in the unifying idea of synchronizing a positive voltage pulse supplied to an electrically conductive or ferromagnetic tube and a exciting negative voltage pulse on a hollow cathode induced on the background of a high-frequency capacitive discharge. In one embodiment, the invention relates to a method of generating low-temperature plasma in a vacuum chamber comprising a hollow cathode and an electrode, the method comprising the step of igniting the pulsed DC discharge in the hollow cathode wherein the positive voltage pulse at least partially overlaps with the negative voltage pulse, and the positive voltage pulse at least partially overlaps with the negative voltage pulse on the hollow cathode. In another embodiment, the present invention relates to a method of coating the inner walls of hollow tubes which utilizes the above-mentioned low-temperature plasma generation process. In another embodiment, the invention relates to a low-temperature plasma generating device comprising a hollow cathode located in the vacuum chamber, a RF plasma source, a pulse DC burst source, and a bipolar pulse source. In another embodiment, an object of the invention is an apparatus adapted to coat the inner sides of hollow tubes comprising a low-temperature plasma generating device.

A sputtering target structure includes a body having a first side and an opposing second side. A first sputtering target is coupled to the first side of the body. The first sputtering target includes a first material. A second sputtering target is coupled to the second side of the body. The second sputtering target includes a second material. A rotation mechanism is coupled to the body and is configured to allow rotation of the body from a first orientation to a second orientation.

The present invention discloses a PVD coating process for producing a multifunctional coating structure comprising the steps of producing a HEA ceramic matrix on a substrate and the targeted introduction of a controlled precipitate structure into the HEA ceramic matrix to generate a desired specific property of the coating structure.

The present invention discloses a PVD coating process for producing a multifunctional coating structure comprising the steps of producing a HEA ceramic matrix on a substrate and the targeted introduction of a controlled precipitate structure into the HEA ceramic matrix to generate a desired specific property of the coating structure.

An aluminum or copper alloy sputtering chamber includes a front surface, a back surface opposite the front surface, and a sputter trap formed on at least a portion of the front surface A coating of titanium particles is formed on the sputter trap.

The present disclosure discloses a heating device in a semiconductor apparatus and the semiconductor apparatus, including a heating body configured to carry a wafer, a heating member configured to generate heat being arranged in the heating body; and a cooling structure, which is arranged on the heating body below, and a cooling structure being arranged below the heating body. The cooling structure is configured to perform heat exchange with the heating body selectively at different positions away from the heating body. The heating device in the semiconductor apparatus and the semiconductor apparatus of the present disclosure are configured to expand an application temperature range of the heating device to satisfy different temperature requirements.

A system comprising (i) thin film optical element comprising substrate and thin film stack (≥2 film layers; uniform thickness—variation of less than ±5% in any 10 mm.sup.2 stack) deposited on substrate's first side; (ii) holder comprising at least one opening; wherein holder has inner side and outer side having beveled edge extending into lip having flat side and beveled edge side; wherein beveled edge/beveled edge side of lip form angle <45° with flat side of lip/first side; wherein flat side of lip and holder inner side define socket receiving substrate; wherein opening exposes first side to deposition plume; wherein first side contacts flat side of lip, thereby allowing film stack deposition on first side; wherein beveled edge side/beveled edge provide film uniformity, and (iii) deposition source providing plume traveling towards first side perpendicular to flat side of lip/first deposition side; and wherein beveled edge side faces plume.

A system comprising (i) thin film optical element comprising substrate and thin film stack (≥2 film layers; uniform thickness—variation of less than ±5% in any 10 mm.sup.2 stack) deposited on substrate's first side; (ii) holder comprising at least one opening; wherein holder has inner side and outer side having beveled edge extending into lip having flat side and beveled edge side; wherein beveled edge/beveled edge side of lip form angle <45° with flat side of lip/first side; wherein flat side of lip and holder inner side define socket receiving substrate; wherein opening exposes first side to deposition plume; wherein first side contacts flat side of lip, thereby allowing film stack deposition on first side; wherein beveled edge side/beveled edge provide film uniformity, and (iii) deposition source providing plume traveling towards first side perpendicular to flat side of lip/first deposition side; and wherein beveled edge side faces plume.