Patent classifications
C23C14/34
METHOD FOR FABRICATING A MICRO RESISTANCE LAYER AND METHOD FOR FABRICATING A MICRO RESISTOR
A method for fabricating a micro resistance layer and a method for fabricating a micro resistor are provided. The method for fabricating a micro resistance layer includes: providing a substrate; forming a first resistance layer on the substrate by using a screen printing process or a sputtering process; dividing the first resistance layer into second resistance layers, wherein each one of the product regions includes a second resistance layer, and an area of each one of the product regions is smaller than 0.4*0.2 mm.sup.2; and trimming the second resistance layer of each one of the product regions according to a predetermined resistance value to enable the pattern of each one of the second resistance layers to correspond to the predetermined resistance value. The method for fabricating a micro resistor uses the method for fabricating a micro resistance layer for fabrication of the micro resistor.
COUNTER ELECTRODE FOR ELECTROCHROMIC DEVICES
The embodiments herein relate to electrochromic stacks, electrochromic devices, and methods and apparatus for making such stacks and devices. In various embodiments, an anodically coloring layer in an electrochromic stack or device is fabricated to include nickel tungsten tantalum oxide (NiWTaO). This material is particularly beneficial in that it is very transparent in its clear state.
Method for manufacturing semiconductor device
In a semiconductor device in which a channel formation region is included in an oxide semiconductor layer, an oxide insulating film below and in contact with the oxide semiconductor layer and a gate insulating film over and in contact with the oxide semiconductor layer are used to supply oxygen of the gate insulating film, which is introduced by an ion implantation method, to the oxide semiconductor layer.
COUNTER ELECTRODE MATERIAL FOR ELECTROCHROMIC DEVICES
Various embodiments herein relate to electrochromic devices, methods of fabricating electrochromic devices, and apparatus for fabricating electrochromic devices. In a number of cases, the electrochromic device may be fabricated to include a particular counter electrode material. The counter electrode material may include a base anodically coloring material. The counter electrode material may further include one or more halogens. The counter electrode material may also include one or more additives.
Anti-reflection film and production method therefor
There is provided an anti-reflection film that has an excellent reflection characteristic (low reflectivity) in a wide spectrum and has an excellent reflection hue that is close to neutral, and a method by which such anti-reflection film can be produced with high productivity and at a low cost. An anti-reflection film according to the present invention includes: a substrate; and a medium-refractive index layer, a high-refractive index layer, and a low-refractive index layer in the stated order from a substrate side. A refractive index n.sub.S of the substrate, a refractive index n.sub.M of the medium-refractive index layer, and a refractive index n.sub.H of the high-refractive index layer satisfy the following expression (1):
Anti-reflection film and production method therefor
There is provided an anti-reflection film that has an excellent reflection characteristic (low reflectivity) in a wide spectrum and has an excellent reflection hue that is close to neutral, and a method by which such anti-reflection film can be produced with high productivity and at a low cost. An anti-reflection film according to the present invention includes: a substrate; and a medium-refractive index layer, a high-refractive index layer, and a low-refractive index layer in the stated order from a substrate side. A refractive index n.sub.S of the substrate, a refractive index n.sub.M of the medium-refractive index layer, and a refractive index n.sub.H of the high-refractive index layer satisfy the following expression (1):
Plasma erosion resistant rare-earth oxide based thin film coatings
An article comprises a body and at least one protective layer on at least one surface of the body. The at least one protective layer is a thin film having a thickness of less than approximately 20 microns that comprises a ceramic selected from a group consisting of Y.sub.3Al.sub.5O.sub.12, Y.sub.4Al.sub.2O.sub.9, Er.sub.2O.sub.3, Gd.sub.2O.sub.3, Er.sub.3Al.sub.5O.sub.12, Gd.sub.3Al.sub.5O.sub.12 and a ceramic compound comprising Y.sub.4Al.sub.2O.sub.9 and a solid-solution of Y.sub.2O.sub.3—ZrO.sub.2.
Plasma erosion resistant rare-earth oxide based thin film coatings
An article comprises a body and at least one protective layer on at least one surface of the body. The at least one protective layer is a thin film having a thickness of less than approximately 20 microns that comprises a ceramic selected from a group consisting of Y.sub.3Al.sub.5O.sub.12, Y.sub.4Al.sub.2O.sub.9, Er.sub.2O.sub.3, Gd.sub.2O.sub.3, Er.sub.3Al.sub.5O.sub.12, Gd.sub.3Al.sub.5O.sub.12 and a ceramic compound comprising Y.sub.4Al.sub.2O.sub.9 and a solid-solution of Y.sub.2O.sub.3—ZrO.sub.2.
Hard coating and target for forming hard coating
Provided is a hard coating having, in particular, excellent oxidation resistance, high hardness, and excellent abrasion resistance as compared with conventional hard coatings such as TiSiN, TiAlSiN, TiCrAlSiN, and AlCrSiN coatings. The hard coating according to the present invention has a compositional formula of (Ti.sub.αCr.sub.1-α).sub.1-aGe.sub.a(C.sub.1-xN.sub.x), where the atomic ratios of the elements satisfy the expressions: 0≦α≦1, 0.010≦a≦0.20, and 0.5≦x≦1.
Visualization device and related systems and methods
According to one aspect, a visualization device may include an image sensor, a lens for focusing light onto the image sensor, a first end, a second end opposite the first end, a lateral wall surface extending between the first end and the second end, and a coating on the lateral wall surface. The coating may include at least one of an electrically-insulating layer and a light-blocking layer, and may be deposited on the lateral wall surface using, for example, physical vapor deposition (PVD).