Various embodiments herein relate to carriers for supporting one or more substrate as the substrates are passed through a processing apparatus. In many cases, the substrates are oriented in a vertical manner. The carrier may include a frame and vertical support bars that secure the glass to the frame. The carrier may lack horizontal support bars. The carrier may allow for thermal expansion and contraction of the substrates, without any need to provide precise gaps between adjacent pairs of substrates. The carriers described herein substantially reduce the risk of breaking the processing apparatus and substrates, thereby achieving a more efficient process. Certain embodiments herein relate to methods of loading substrates onto a carrier.

Various embodiments herein relate to carriers for supporting one or more substrate as the substrates are passed through a processing apparatus. In many cases, the substrates are oriented in a vertical manner. The carrier may include a frame and vertical support bars that secure the glass to the frame. The carrier may lack horizontal support bars. The carrier may allow for thermal expansion and contraction of the substrates, without any need to provide precise gaps between adjacent pairs of substrates. The carriers described herein substantially reduce the risk of breaking the processing apparatus and substrates, thereby achieving a more efficient process. Certain embodiments herein relate to methods of loading substrates onto a carrier.

A novel sputtering apparatus capable of separating functions can be provided. A sputtering apparatus is capable of forming a semiconductor film and includes a first target, a first power source connected to the first target, a first shutter facing the first target, a first driver portion connected to the first shutter, a second target, a second power source connected to the second target, a second shutter facing the second target, and a second driver portion connected to the second shutter. The first driver portion and the second driver portion operate in conjunction with each other.

The present disclosure provides a film forming method and an aluminum nitride film forming method for a semiconductor device. The film forming method for a semiconductor device includes performing multiple sputtering routes sequentially. Each sputtering routes includes: loading a substrate into a chamber; moving a shielding plate between a target and the substrate; introducing an inert gas into the chamber to perform a surface modification process on the target; performing a pre-sputtering to pre-treat a surface of the target; moving the shielding plate away from the substrate, and performing a main sputtering on the substrate to form a film on the substrate; and moving the substrate out of the chamber.

The present disclosure provides a film forming method and an aluminum nitride film forming method for a semiconductor device. The film forming method for a semiconductor device includes performing multiple sputtering routes sequentially. Each sputtering routes includes: loading a substrate into a chamber; moving a shielding plate between a target and the substrate; introducing an inert gas into the chamber to perform a surface modification process on the target; performing a pre-sputtering to pre-treat a surface of the target; moving the shielding plate away from the substrate, and performing a main sputtering on the substrate to form a film on the substrate; and moving the substrate out of the chamber.

Provided is a tantalum sputtering target containing 1 mass ppm or more and 100 mass ppm or less of tungsten as an essential component, and having a purity of 99.998% or more excluding tungsten and gas components. Additionally provided is a tantalum sputtering target according to according to the above further containing 0 to 100 mass ppm of molybdenum and/or niobium, excluding 0 mass ppm thereof, wherein the total content of tungsten, molybdenum, and niobium is 1 mass ppm or more and 150 mass ppm or less, and wherein the purity is 99.998% or more excluding tungsten, molybdenum, niobium and gas components. Thereby obtained is a high purity tantalum sputtering target comprising a uniform and fine structure and which enables stable plasma and yields superior film evenness (uniformity).

Disclosed is a hard coating including a chemical composition specified by formula: (Ti.sub.aAl.sub.bSi.sub.cR.sub.d)O.sub.x, where R represents at least one rare-earth element; and a, b, c, d, and x are atomic ratios respectively of Ti, Al, Si, R, and O. The atomic ratios meet conditions as specified by formulae: 0.30≦a≦0.7, 0.30≦b≦0.70, 0≦c≦0.2, 0.005≦d≦0.05, a+b+c+d=1, and 0.5≦a/b<1. The atomic ratios meet a condition as specified by Formula (1) when R does not include Ce. The atomic ratios meet a condition as specified by Formula (2) when R includes Ce. The hard coating has better wear resistance as compared with conventional nitride films and oxide films.
0.8≦[x/(2a+1.5b+2c+1.5d)]≦1.2  (1)
0.8≦[x/(2a+1.5b+2c+2d)]≦1.2  (2)

Disclosed is a hard coating including a chemical composition specified by formula: (Ti.sub.aAl.sub.bSi.sub.cR.sub.d)O.sub.x, where R represents at least one rare-earth element; and a, b, c, d, and x are atomic ratios respectively of Ti, Al, Si, R, and O. The atomic ratios meet conditions as specified by formulae: 0.30≦a≦0.7, 0.30≦b≦0.70, 0≦c≦0.2, 0.005≦d≦0.05, a+b+c+d=1, and 0.5≦a/b<1. The atomic ratios meet a condition as specified by Formula (1) when R does not include Ce. The atomic ratios meet a condition as specified by Formula (2) when R includes Ce. The hard coating has better wear resistance as compared with conventional nitride films and oxide films.
0.8≦[x/(2a+1.5b+2c+1.5d)]≦1.2  (1)
0.8≦[x/(2a+1.5b+2c+2d)]≦1.2  (2)

Disclosed herein is a method of forming a multilayer thin film by depositing target particles, detached from a target by plasma discharge of inert gas, on a metal object using a multilayer thin film deposition apparatus and a multilayer thin film formed by the method. More specifically, a sputtering deposition apparatus is used as the multilayer thin film deposition apparatus. The method includes coating a metal object with a coating layer, depositing at least one hardness-enhancing layer on the coating layer, and depositing a color layer on the at least one hardness-enhancing layer.

Provided are: a novel electrode which is suitable for use in an input device as typified by a capacitive touch panel sensor, and which has low electrical resistivity and low reflectance; and a method for producing this electrode. This electrode has a multilayer structure comprising a first layer that is formed of an Al film or an Al alloy film and a second layer that is partially nitrided and is formed of an Al alloy containing Al and at least one element selected from the group consisting of Mn, Cu, Ti and Ta.