C23C14/34

BIOSENSOR FOR SINGLE CELL ANALYSIS

A biosensor for single cell analysis is disclosed. The biosensor includes a substrate, an array of electrodes, and a passivation layer. The substrate includes a roughened surface, where the array of electrodes is patterned on the roughened surface. Each electrode includes a distal tip and a proximal end. The passivation layer is deposited on top of the biosensor and includes a microwell around the distal tip of an electrode. A single cell is trapped within the microwell and adhered onto the distal tip of the electrode for further single cell analysis.

BIOSENSOR FOR SINGLE CELL ANALYSIS

A biosensor for single cell analysis is disclosed. The biosensor includes a substrate, an array of electrodes, and a passivation layer. The substrate includes a roughened surface, where the array of electrodes is patterned on the roughened surface. Each electrode includes a distal tip and a proximal end. The passivation layer is deposited on top of the biosensor and includes a microwell around the distal tip of an electrode. A single cell is trapped within the microwell and adhered onto the distal tip of the electrode for further single cell analysis.

Molybdenum containing targets for touch screen device

The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of titanium, and a third metal element of chromium or tantalum, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in titanium, and a phase that is rich in the third metal element.

Molybdenum containing targets for touch screen device

The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of titanium, and a third metal element of chromium or tantalum, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in titanium, and a phase that is rich in the third metal element.

IN-PLANE MAGNETIZED FILM, IN-PLANE MAGNETIZED FILM MULTILAYER STRUCTURE, HARD BIAS LAYER, MAGNETORESISTANCE EFFECT ELEMENT, AND SPUTTERING TARGET

An in-plane magnetized film for use as a hard bias layer of a magnetoresistive effect element contains metal Co, metal Pt, and an oxide and has a thickness of 20 nm or more and 80 nm or less, wherein: the in-plane magnetized film contains the metal Co in an amount of 45 at% or more and 80 at% or less and the metal Pt in an amount of 20 at% or more and 55 at% or less relative to a total of metal components of the in-plane magnetized film; the in-plane magnetized film contains the oxide in an amount of 3 vol% or more and 25 vol% or less relative to a whole amount of the in-plane magnetized film; and the in-plane direction average grain diameter of magnetic crystal grains of the in-plane magnetized film is 15 nm or more and 30 nm or less.

IN-PLANE MAGNETIZED FILM, IN-PLANE MAGNETIZED FILM MULTILAYER STRUCTURE, HARD BIAS LAYER, MAGNETORESISTANCE EFFECT ELEMENT, AND SPUTTERING TARGET

An in-plane magnetized film for use as a hard bias layer of a magnetoresistive effect element contains metal Co, metal Pt, and an oxide and has a thickness of 20 nm or more and 80 nm or less, wherein: the in-plane magnetized film contains the metal Co in an amount of 45 at% or more and 80 at% or less and the metal Pt in an amount of 20 at% or more and 55 at% or less relative to a total of metal components of the in-plane magnetized film; the in-plane magnetized film contains the oxide in an amount of 3 vol% or more and 25 vol% or less relative to a whole amount of the in-plane magnetized film; and the in-plane direction average grain diameter of magnetic crystal grains of the in-plane magnetized film is 15 nm or more and 30 nm or less.

REFLECTIVE OPTICAL METASURFACE FILMS

An optical metasurface film includes a flexible polymeric film having a first major surface, a patterned polymer layer having a first surface proximate to the first major surface of the flexible polymeric film and having a second nanostructured surface opposite the first surface, and a refractive index contrast layer including a refractive index contrast material adjacent to the nanostructured surface of the patterned polymer layer forming a nanostructured bilayer with a nano structured interface. The nanostructured bilayer comprising a plurality of nanostructures disposed on the flexible polymeric film. The nanostructured bilayer imparts a light phase shift that varies as a function of position of the nano structured bilayer on the flexible polymeric film. The light phase shift of the nanostructured bilayer defines a predetermined operative phase profile of the optical metasurface film. A light reflecting layer is in optical communication with the nano structured bilayer.

Zn—Sn—O based oxide sintered body and method for producing the same

[Object] Provided are a Zn—Sn—O-based oxide sintered body which is used as a sputtering target or a tablet for vapor deposition and which is resistant to crack formation and the like during film formation, and a method for producing the same. [Solving means] The oxide sintered body is characterized in that tin is contained with an atomic ratio of Sn/(Zn+Sn) being 0.01 to 0.6, an average crystal particle diameter of the sintered body is 4.5 μm or less, and a degree of orientation represented by I.sub.(222)/[I.sub.(222)+I.sub.(400)] is 0.52 or more, where I.sub.(222) and I.sub.(400) represent integrated intensities of the (222) plane and the (400) plane of a Zn.sub.2SnO.sub.4 phase measured by X-ray diffraction using the CuKα radiation. The oxide sintered body has an improved mechanical strength, so that the oxide sintered body is resistant to breakage during processing of the sintered body and also is resistant to breakage and crack formation during film formation of transparent conductive films when used as a sputtering target or a tablet for vapor deposition.

Oxide semiconductor target, oxide semiconductor film and method for producing same, and thin film transistor

The invention provides an oxide semiconductor target including an oxide sintered body including zinc, tin, oxygen, and aluminum in a content ratio of from 0.005% by mass to 0.2% by mass with respect to the total mass of the oxide sintered body, in which the content ratio of silicon to the total mass of the oxide sintered body is less than 0.03% by mass.

HIGH-ENTROPY CARBIDE CERAMIC MATERIAL, CARBIDE CERAMIC COATING AND PREPARATION METHODS AND USE THEREOF

Disclosed are a high-entropy carbide ceramic material and a preparation method thereof, and also a ceramic coating and its preparation method and use. The high-entropy carbide ceramic material has a chemical composition of (ZrCrTiVNb)C and includes Zr, Cr, Ti, V, and Nb, with a same mole fraction of 6-10%.