Provided is a copper alloy sputtering target, wherein, based on charged particle activation analysis, the copper alloy sputtering target has an oxygen content of 0.6 wtppm or less, or an oxygen content of 2 wtppm or less and a carbon content of 0.6 wtppm or less. Additionally provided is a method for manufacturing a copper alloy sputtering target, wherein a copper raw material is melted in a vacuum or an inert gas atmosphere, a reducing gas is thereafter introduced into the melting atmosphere, an alloy element is subsequently added to a molten metal for alloying, and an obtained ingot is processed into a target shape. The present invention aims to provide a copper alloy sputtering target that generates few particles during sputtering, and a method for manufacturing such a sputtering target.

Provided is a copper alloy sputtering target, wherein, based on charged particle activation analysis, the copper alloy sputtering target has an oxygen content of 0.6 wtppm or less, or an oxygen content of 2 wtppm or less and a carbon content of 0.6 wtppm or less. Additionally provided is a method for manufacturing a copper alloy sputtering target, wherein a copper raw material is melted in a vacuum or an inert gas atmosphere, a reducing gas is thereafter introduced into the melting atmosphere, an alloy element is subsequently added to a molten metal for alloying, and an obtained ingot is processed into a target shape. The present invention aims to provide a copper alloy sputtering target that generates few particles during sputtering, and a method for manufacturing such a sputtering target.

A method of the invention which manufactures a substrate with a transparent conductive film, includes: preparing a base body that has a top surface and a back surface and has an a-Si film coating at least one of the top surface and the back surface; and setting temperatures of the base body and the a-Si film to be in the range of 70 to 220° C. in a film formation space having a processing gas containing hydrogen, applying a sputtering voltage to a target, carrying out DC sputtering, and thereby forming the a-Si film on a transparent conductive film.

A method of the invention which manufactures a substrate with a transparent conductive film, includes: preparing a base body that has a top surface and a back surface and has an a-Si film coating at least one of the top surface and the back surface; and setting temperatures of the base body and the a-Si film to be in the range of 70 to 220° C. in a film formation space having a processing gas containing hydrogen, applying a sputtering voltage to a target, carrying out DC sputtering, and thereby forming the a-Si film on a transparent conductive film.

A decoration member including: a color developing layer including a light reflective layer and a light absorbing layer provided on the light reflective layer; and a substrate provided on one surface of the color developing layer. The substrate includes a pattern layer, and the light absorbing layer includes silicon (Si).

A decoration member including: a color developing layer including a light reflective layer and a light absorbing layer provided on the light reflective layer; and a substrate provided on one surface of the color developing layer. The substrate includes a pattern layer, and the light absorbing layer includes silicon (Si).

A method of modifying surfaces of diamond particles comprises forming spinodal alloy coatings over discrete diamond particles, thermally treating the spinodal alloy coatings to form modified coatings each independently exhibiting a reactive metal phase and a substantially non-reactive metal phase, and etching surfaces of the discrete diamond particles with at least one reactive metal of the reactive metal phase of the modified coatings. Diamond particles and earth-boring tools are also described.

A method of modifying surfaces of diamond particles comprises forming spinodal alloy coatings over discrete diamond particles, thermally treating the spinodal alloy coatings to form modified coatings each independently exhibiting a reactive metal phase and a substantially non-reactive metal phase, and etching surfaces of the discrete diamond particles with at least one reactive metal of the reactive metal phase of the modified coatings. Diamond particles and earth-boring tools are also described.

A ceramic capacitor which is low in ESL and suitable for being built into a substrate includes a first external electrode, a second external electrode and a third external electrode. Each of the first, second and third external electrodes include a sputtering electrode film. Each of the outermost layers of the first, second and third external electrodes contains Cu.

A ceramic capacitor that has low ESL and is suitable to be built into a substrate includes a first external electrode including a first portion extending from a portion located on a first principal surface to a portion of a first end surface, a second portion extending from a portion located on a second principal surface to a portion of the first end surface, a third portion extending from a portion located on a first side surface to a portion of the first end surface, and a fourth portion extending from a portion located on a second side surface to a portion of the first end surface. The first external electrode includes an outermost layer that is a Cu plated layer.