Patent classifications
C23C14/34
Gold sputtering target
A gold sputtering target is made of gold and inevitable impurities, and has a surface to be sputtered. In the gold sputtering target, an average value of Vickers hardness is 40 or more and 60 or less, and an average crystal grain size is 15 μm or more and 200 μm or less. A {110} plane of gold is preferentially oriented at the surface to be sputtered.
NiW(X) sputtering target with improved structure
The present invention relates to a sputtering target comprising Ni, W and, optionally, one or more further metal(s) X selected from the group of the refractory metals, Sn, Al and Si, which has a normalized peak intensity ratio
PIR=I.sub.Ni/I.sub.W.Math.(A.sub.W+A.sub.x)/A.sub.Ni of 0.40 or greater, wherein I.sub.Ni is the intensity of the (111) peak of Ni, I.sub.W is the intensity of the (110) peak of W, A.sub.w is the fraction of W in the target in atom %, A.sub.x is the total fraction of the one or more further metals selected from the group of the refractory metals, Sn, Al and Si in the target in atom %, A.sub.Ni is the fraction of Ni in the target in atom %, and wherein the intensities of the peaks are determined by X-ray powder diffraction using Cu-K.sub.alpha radiation.
Temperature control roller, transporting arrangement and vacuum arrangement
According to various embodiments, the temperature control roller may comprise: a cylindrical roller shell, which has a multiplicity of gas outlet openings; a temperature control device, which is configured to supply and/or extract thermal energy to or from the cylindrical roller shell; multiple gas lines made to extend along the axis of rotation; a gas distributing structure, which couples the multiple gas lines and the multiplicity of gas outlet openings to one another in a gas-conducting manner, the gas distributing structure having a lower structure density than the multiplicity of gas outlet openings.
COMPOSITE PVD TARGETS
Embodiments of the present disclosure generally relate to composite PVD target. The target has a diameter, a connection face, a substrate face opposite the connection face, a thickness between the connection face and the substrate face, and a material distribution. The material distribution includes a silicon containing material arranged in a pattern, and a titanium containing material arranged in the pattern. The material distribution is uniform at any point along the thickness.
Durable, high performance wire grid polarizer having barrier layer
A method for making a wire grid polarizer (WGP) can provide WGPs with high temperature resistance, robust wires, oxidation resistance, and corrosion protection. In one embodiment, the method can comprise: (a) providing an array of wires on a bottom protection layer; (b) applying a top protection layer on the wires, spanning channels between wires; then (c) applying an upper barrier-layer on the top protection layer and into the channels through permeable junctions in the top protection layer. In a variation of this embodiment, the method can further comprise applying a lower barrier-layer before applying the top protection layer. In another variation, the bottom protection layer and the top protection layer can include aluminum oxide. In another embodiment, the method can comprise applying on the WGP an amino phosphonate then a hydrophobic chemical.
Durable, high performance wire grid polarizer having barrier layer
A method for making a wire grid polarizer (WGP) can provide WGPs with high temperature resistance, robust wires, oxidation resistance, and corrosion protection. In one embodiment, the method can comprise: (a) providing an array of wires on a bottom protection layer; (b) applying a top protection layer on the wires, spanning channels between wires; then (c) applying an upper barrier-layer on the top protection layer and into the channels through permeable junctions in the top protection layer. In a variation of this embodiment, the method can further comprise applying a lower barrier-layer before applying the top protection layer. In another variation, the bottom protection layer and the top protection layer can include aluminum oxide. In another embodiment, the method can comprise applying on the WGP an amino phosphonate then a hydrophobic chemical.
MEMS process power
A transducer includes a first piezoelectric layer; and a second piezoelectric layer that is above the first piezoelectric layer; wherein the second piezoelectric layer is a more compressive layer with an average stress that is less than or more compressive than an average stress of the first piezoelectric layer.
MEMS process power
A transducer includes a first piezoelectric layer; and a second piezoelectric layer that is above the first piezoelectric layer; wherein the second piezoelectric layer is a more compressive layer with an average stress that is less than or more compressive than an average stress of the first piezoelectric layer.
Method for Making Porous Graphene Membranes and Membranes Produced Using the Method
Provided is a method for making a porous graphene layer of a thickness of less than 100 nm, including the following steps: providing a catalytically active substrate, said catalytically active substrate on its surface being provided with a plurality of catalytically inactive domains having a size essentially corresponding to the size of the pores in the resultant porous graphene layer; and chemical vapour deposition and formation of the porous graphene layer on the surface of the catalytically active substrate;. The catalytically active substrate is a copper-nickel alloy substrate with a copper content in the range of 98 to less than 99.96% by weight and a nickel content in the range of more than 0.04-2% by weight, the copper and nickel contents complementing to 100% by weight of the catalytically active substrate.
Method for Making Porous Graphene Membranes and Membranes Produced Using the Method
Provided is a method for making a porous graphene layer of a thickness of less than 100 nm, including the following steps: providing a catalytically active substrate, said catalytically active substrate on its surface being provided with a plurality of catalytically inactive domains having a size essentially corresponding to the size of the pores in the resultant porous graphene layer; and chemical vapour deposition and formation of the porous graphene layer on the surface of the catalytically active substrate;. The catalytically active substrate is a copper-nickel alloy substrate with a copper content in the range of 98 to less than 99.96% by weight and a nickel content in the range of more than 0.04-2% by weight, the copper and nickel contents complementing to 100% by weight of the catalytically active substrate.