Methods and apparatus for processing a plurality of substrates are provided herein. In some embodiments, a method of processing a plurality of substrates in a physical vapor deposition (PVD) chamber includes: performing a series of reflow processes on a corresponding series of substrates over at least a portion of a life of a sputtering target disposed in the PVD chamber, wherein a substrate-to-target distance in the PVD chamber and a support-to-target distance within the PVD chamber are each controlled as a function of the life of the sputtering target.

The embodiments herein relate to electrochromic stacks, electrochromic devices, and methods and apparatus for making such stacks and devices. In various embodiments, an anodically coloring layer in an electrochromic stack or device is fabricated to include nickel-tungsten-tin-oxide (NiWSnO). This material is particularly beneficial in that it is very transparent in its clear state.

The embodiments herein relate to electrochromic stacks, electrochromic devices, and methods and apparatus for making such stacks and devices. In various embodiments, an anodically coloring layer in an electrochromic stack or device is fabricated to include nickel-tungsten-tin-oxide (NiWSnO). This material is particularly beneficial in that it is very transparent in its clear state.

A pulsed direct current sputtering system and method are disclosed. The system has a plasma chamber with two targets, two magnetrons and one anode, a first power source, and a second power source. The first power source is coupled to the first magnetron and the anode, and provides a cyclic first-power-source voltage with a positive potential and a negative potential during each cycle between the anode and the first magnetron. The second power source is coupled to the second magnetron and the anode, and provides a cyclic second-power-source voltage. The controller phase-synchronizes and controls the first-power-source voltage and second-power-source voltage to apply a combined anode voltage, and phase-synchronizes a first magnetron voltage with a second magnetron voltage, wherein the combined anode voltage applied to the anode has a magnitude of at least 80 percent of a magnitude of a sum of the first magnetron voltage and the second magnetron voltage.

Disclosed are rare earth metal containing silicate coatings, coated articles (e.g., heaters and susceptors) or bodies of articles and methods of coating such articles with a rare earth metal containing silicate coating.

Disclosed are rare earth metal containing silicate coatings, coated articles (e.g., heaters and susceptors) or bodies of articles and methods of coating such articles with a rare earth metal containing silicate coating.

A metal oxide thin film formed of β-MoO.sub.3 includes at least one doping element of the group Re, Mn, and Ru. Further, there is described a method of producing such a metal oxide thin film via sputtering and a thin film device with a metal oxide thin film of β-MoO.sub.3 that includes at least one doping element selected from the group Re, Mn, and Ru.

A sputtering target assembly, sputtering apparatus, and method, the target assembly including a backing plate having an aperture formed therein; and a target bonded to a front surface of the backing plate. The aperture is disposed on the backing plate such that a first end of the aperture is sealed by a portion of the target that is predicted by a sputtering target erosion profile to have the highest etching rate during a corresponding sputtering process.

Prior electrochromic devices frequently suffer from high levels of defectivity. The defects may be manifest as pin holes or spots where the electrochromic transition is impaired. This is unacceptable for many applications such as electrochromic architectural glass. Improved electrochromic devices with low defectivity can be fabricated by depositing certain layered components of the electrochromic device in a single integrated deposition system. While these layers are being deposited and/or treated on a substrate, for example a glass window, the substrate never leaves a controlled ambient environment, for example a low pressure controlled atmosphere having very low levels of particles. These layers may be deposited using physical vapor deposition.

Problems to be Solved: To provide a metal foil coil with a planarization film, with which an electronic device can be formed by a roll to roll process. Solution: A quick curable coating liquid for a planarization film prepared by adding into an organic solvent, with respect to 1 mol of a phenyltrialkoxysilane, 0.1 mol to 1 mol of acetic acid and 0.005 mol to 0.05 mol of organic tin as a catalyst, hydrolyzing the silane with 2 mol to 4 mol of water, then distilling away the organic solvent at a temperature of 160° C. to 210° C. under reduced pressure to yield a resin, and dissolving the resin in an aromatic hydrocarbon solvent, is coated on a metal foil coil to a film thickness of 2.0 μm to 5.0 μm. When an insulation coating is provided on a metal foil coil before a planarization film is formed, high reliability for insulation can be obtained. When a stainless steel foil provided with a reflection film is used, a highly efficient light emitting device can be obtained.