The present invention provides for an electroactive device having a first conductive layer, a second conductive layer, and one or more electroactive layers sandwiched between the first and second conductive layers. One or more adjacent layers of the electroactive device may include a physical separation between a first portion and a second portion of the adjacent layers, the physical separation defining a respective tapered sidewall of each of the first and second portions. The one or more adjacent layers may include one of the first and second conductive layers. The remaining layers of the electroactive device may be formed over the physical separation of the one or more adjacent layers. The remaining layers may include the other of the first and second conductive layers.

The present invention provides for an electroactive device having a first conductive layer, a second conductive layer, and one or more electroactive layers sandwiched between the first and second conductive layers. One or more adjacent layers of the electroactive device may include a physical separation between a first portion and a second portion of the adjacent layers, the physical separation defining a respective tapered sidewall of each of the first and second portions. The one or more adjacent layers may include one of the first and second conductive layers. The remaining layers of the electroactive device may be formed over the physical separation of the one or more adjacent layers. The remaining layers may include the other of the first and second conductive layers.

A method for forming a perpendicular magnetization type magnetic tunnel junction element includes forming a tunnel barrier layer on a first magnetic layer of a workpiece, cooling the workpiece on which the tunnel barrier layer is formed, and forming a second magnetic layer on the tunnel barrier layer after the cooling.

A method for forming a perpendicular magnetization type magnetic tunnel junction element includes forming a tunnel barrier layer on a first magnetic layer of a workpiece, cooling the workpiece on which the tunnel barrier layer is formed, and forming a second magnetic layer on the tunnel barrier layer after the cooling.

An implant for the cardiovascular system is provided, the implant is insertable into an organ and includes a body structure configured to be disposed inside an organ; and an electret coating disposed on the body structure; wherein the electret coating includes a negative charge such that a negative electrostatic field is formed in proximity of the body structure, the charge is such that the negative electrostatic field corresponds to a positive electrostatic field formed by a damaged tissue of the organ.

Embodiments of the invention generally relate to an anode for a semiconductor processing chamber. More specifically, embodiments described herein relate to a process kit including a shield serving as an anode in a physical deposition chamber. The shield has a cylindrical band, the cylindrical band having a top and a bottom, the cylindrical band sized to encircle a sputtering surface of a sputtering target disposed adjacent the top and a substrate support disposed at the bottom, the cylindrical band having an interior surface. A texture is disposed on the interior surface. The texture has a plurality of features. A shaded area is disposed in the feature wherein the shaded area is not visible to the sputtering target. A small anode surface is disposed in the shaded area.

Embodiments of the invention generally relate to an anode for a semiconductor processing chamber. More specifically, embodiments described herein relate to a process kit including a shield serving as an anode in a physical deposition chamber. The shield has a cylindrical band, the cylindrical band having a top and a bottom, the cylindrical band sized to encircle a sputtering surface of a sputtering target disposed adjacent the top and a substrate support disposed at the bottom, the cylindrical band having an interior surface. A texture is disposed on the interior surface. The texture has a plurality of features. A shaded area is disposed in the feature wherein the shaded area is not visible to the sputtering target. A small anode surface is disposed in the shaded area.

The invention discloses a method for preparing a flaky iron oxide. The flaky iron oxide is obtained through a vacuum coating machine. The vacuum coating machine includes a vacuum pump, a vacuum pipeline arrangement, a vacuum coating chamber, a flaky iron oxide supporting chamber and an electrical discharging gas inlet. High-energy particles generated by an iron oxide target are deposited on the surface of the conveying belt; and then the flaky iron oxide on a conveying belt is stripped and calcined to obtain the flaky iron oxide with bright color. By means of the method, vacuum sputtering time can be controlled to prepare the flaky iron oxide with various diameter-to-thickness ratios, and pollution caused by a traditional chemical deposition preparation method can be avoided. The preparation method is simple and environment-friendly. Due to the adoption of roller transmission, the production efficiency is improved.

The invention discloses a method for preparing a flaky iron oxide. The flaky iron oxide is obtained through a vacuum coating machine. The vacuum coating machine includes a vacuum pump, a vacuum pipeline arrangement, a vacuum coating chamber, a flaky iron oxide supporting chamber and an electrical discharging gas inlet. High-energy particles generated by an iron oxide target are deposited on the surface of the conveying belt; and then the flaky iron oxide on a conveying belt is stripped and calcined to obtain the flaky iron oxide with bright color. By means of the method, vacuum sputtering time can be controlled to prepare the flaky iron oxide with various diameter-to-thickness ratios, and pollution caused by a traditional chemical deposition preparation method can be avoided. The preparation method is simple and environment-friendly. Due to the adoption of roller transmission, the production efficiency is improved.

A photosensitive device and method includes a top cell having an N-type layer, a P-type layer and a top intrinsic layer therebetween. A bottom cell includes an N-type layer, a P-type layer and a bottom intrinsic layer therebetween. The bottom intrinsic layer includes a Cu—Zn—Sn containing chalcogenide.