A transparent conductive film, includes: an organic polymer film substrate; at least one undercoat layer formed on the organic polymer film substrate by a dry process; and a transparent conductive coating provided on at least one surface of the organic polymer film substrate with the undercoat layer interposed therebetween, wherein the transparent conductive coating is a crystalline coating of an indium-based complex oxide having a content of a tetravalent metal element oxide of 7 to 15% by weight as calculated by the formula {(the amount of the tetravalent metal element oxide)/(the amount of the tetravalent metal element oxide+the amount of indium oxide)}×100(%), the transparent conductive coating has a thickness in the range of 10 to 40 nm, and the transparent conductive coating has a specific resistance of 1.3×10.sup.−4 to 2.8×10.sup.−4 Ω.Math.cm.

The method for processing a substrate includes the substrate preparation step of preparing the substrate, the pattern formation step of forming dummy patterns extending in an X-direction on the substrate, the mask arrangement step of arranging a stencil mask having multiple opening patterns on the substrate, the coating formation step of forming a metal film on the substrate through the multiple opening patterns, and the separation step of separating the dummy patterns from the substrate to obtain a submount. The dummy pattern has protrusion formed such that a side surface of the submount is exposed and formed close to the side surface with a clearance.

The method for processing a substrate includes the substrate preparation step of preparing the substrate, the pattern formation step of forming dummy patterns extending in an X-direction on the substrate, the mask arrangement step of arranging a stencil mask having multiple opening patterns on the substrate, the coating formation step of forming a metal film on the substrate through the multiple opening patterns, and the separation step of separating the dummy patterns from the substrate to obtain a submount. The dummy pattern has protrusion formed such that a side surface of the submount is exposed and formed close to the side surface with a clearance.

A physical vapor deposition (PVD) chamber, a process kit of a PVD chamber and a method of fabricating a process kit of a PVD chamber are provided. In various embodiments, the PVD chamber includes a sputtering target, a power supply, a process kit, and a substrate support. The sputtering target has a sputtering surface that is in contact with a process region. The power supply is electrically connected to the sputtering target. The process kit has an inner surface at least partially enclosing the process region, and a liner layer disposed on the inner surface. The substrate support has a substrate receiving surface, wherein the liner layer disposed on the inner surface of the process kit has a surface roughness (Rz), and the surface roughness (Rz) is substantially in a range of 50-200 μm.

A physical vapor deposition (PVD) chamber, a process kit of a PVD chamber and a method of fabricating a process kit of a PVD chamber are provided. In various embodiments, the PVD chamber includes a sputtering target, a power supply, a process kit, and a substrate support. The sputtering target has a sputtering surface that is in contact with a process region. The power supply is electrically connected to the sputtering target. The process kit has an inner surface at least partially enclosing the process region, and a liner layer disposed on the inner surface. The substrate support has a substrate receiving surface, wherein the liner layer disposed on the inner surface of the process kit has a surface roughness (Rz), and the surface roughness (Rz) is substantially in a range of 50-200 μm.

The present invention provides an epitaxial film forming method for epitaxially growing a high-quality group III nitride semiconductor thin film on an α-Al.sub.2O.sub.3 substrate by a sputtering method. In the epitaxial film forming method according to an embodiment of the present invention, when an epitaxial film of a group III nitride semiconductor thin film is to be formed on the α-Al.sub.2O.sub.3 substrate arranged on a substrate holder provided with a heater electrode and a bias electrode of a sputtering apparatus, in a state where the α-Al.sub.2O.sub.3 substrate is maintained at a predetermined temperature by the heater electrode, high-frequency power is applied to a target electrode and high-frequency bias power is applied to a bias electrode and at that time, the powers are applied so that frequency interference between the high-frequency power and the high-frequency bias power does not occur.

A method for manufacturing a resistive device, includes depositing a first electrically conductive layer on a substrate; forming an etching mask on the first conductive layer; etching the first conductive layer through the mask, such as to obtain a plurality of electrically conductive pillars separated from one another; and forming storage elements with variable electrical resistance at the tops of the electrically conductive pillars, such that each storage element is supported by one of the electrically conductive pillars, the step of forming the storage elements including the following operations depositing a first layer by non-collimated cathode sputtering at normal incidence relative to the substrate; and depositing a second layer on the first layer by cathode sputtering, the second layer including a first chemical species sputtered at an oblique incidence.

The present invention provides a niobium oxide sintered compact having a composition of NbO.sub.x (2<x<2.5), and specifically provides a niobium oxide sintered compact which can be applied to a sputtering target for forming a high-quality resistance change layer for use in ReRAM. In particular, the present invention aims to provide a high-density niobium oxide sintered compact suitable for stabilizing the sputtering process.

A film for inorganic substance deposition, comprising single or multiple resin layers, wherein all of the resin layers contain an ethylene-based polymer (A) having a melt tension (MT), as measured at 190° C., of not more than 5.0 g, and the film satisfies the following requirements: Requirement (1): the amount of a component generated by heating the film under the prescribed conditions is not more than 1.2 μg per milligram of the film; Requirement (2): the amount of a compound containing pentavalent phosphorus, said compound being recovered after washing of a surface of the film under the prescribed conditions, is not more than 9 μg; and Requirement (3): the amount of an oxide of an oligomer of a hexamer to a decamer, said oxide being recovered after washing of a surface of the film under the prescribed conditions, is not more than 1.5 μg.

A film for inorganic substance deposition, comprising single or multiple resin layers, wherein all of the resin layers contain an ethylene-based polymer (A) having a melt tension (MT), as measured at 190° C., of not more than 5.0 g, and the film satisfies the following requirements: Requirement (1): the amount of a component generated by heating the film under the prescribed conditions is not more than 1.2 μg per milligram of the film; Requirement (2): the amount of a compound containing pentavalent phosphorus, said compound being recovered after washing of a surface of the film under the prescribed conditions, is not more than 9 μg; and Requirement (3): the amount of an oxide of an oligomer of a hexamer to a decamer, said oxide being recovered after washing of a surface of the film under the prescribed conditions, is not more than 1.5 μg.