A sputtering target containing 20 at % to 40 at % of Te, 5 at % to 20 at % of Cu, 5 at % to 15 at % of Zr, and remainder being Al, wherein a structure of the sputtering target is comprise of an Al phase, a Cu phase, a CuTeZr phase, a CuTe phase and a Zr phase. The present invention aims to provide an Al—Te—Cu—Zr-based alloy sputtering target capable of effectively suppressing the degradation of properties caused by compositional deviation, as well as a method of manufacturing the same.

The present invention is directed to tamper-evident mesh material, methods of manufacture therefor, and tamper-evident bags manufactured therefrom. The tamper-evident mesh material of the present invention may be used, for example, in the manufacture of a variety of tamper-evident security bags for use in applications where it is desirable to detect any traces or evidence of tampering with or of unauthorized access to the contents of the bag.

The present invention is directed to tamper-evident mesh material, methods of manufacture therefor, and tamper-evident bags manufactured therefrom. The tamper-evident mesh material of the present invention may be used, for example, in the manufacture of a variety of tamper-evident security bags for use in applications where it is desirable to detect any traces or evidence of tampering with or of unauthorized access to the contents of the bag.

An indium tin oxide film containing by weight about 90% In.sub.2O.sub.3 and about 10% SnO.sub.2 is prepared using a low-energy deposition sputter process on a substrate. The indium tin oxide film thus obtained has a carrier concentration on the order of 10.sup.20/cm.sup.3 and a carrier mobility greater than 30 cm.sup.2/Vs. The low carrier concentration results in an increased transmission in the near infra-red region, while the high carrier mobility results in good conductive properties.

An indium tin oxide film containing by weight about 90% In.sub.2O.sub.3 and about 10% SnO.sub.2 is prepared using a low-energy deposition sputter process on a substrate. The indium tin oxide film thus obtained has a carrier concentration on the order of 10.sup.20/cm.sup.3 and a carrier mobility greater than 30 cm.sup.2/Vs. The low carrier concentration results in an increased transmission in the near infra-red region, while the high carrier mobility results in good conductive properties.

A method for forming a thin film according to an exemplary embodiment of the present invention includes forming the thin film at a power density in the range of approximately 1.5 to approximately 3 W/cm.sup.2 and at a pressure of an inert gas that is in the range of approximately 0.2 to approximately 0.3 Pa. This process results in an amorphous metal thin film barrier layer that prevents undesired diffusion from adjacent layers, even when this barrier layer is thinner than many conventional barrier layers.

A method for forming a thin film according to an exemplary embodiment of the present invention includes forming the thin film at a power density in the range of approximately 1.5 to approximately 3 W/cm.sup.2 and at a pressure of an inert gas that is in the range of approximately 0.2 to approximately 0.3 Pa. This process results in an amorphous metal thin film barrier layer that prevents undesired diffusion from adjacent layers, even when this barrier layer is thinner than many conventional barrier layers.

A method for coating a curved substrate is disclosed, which includes: providing a coating device including: a chamber, a carrying platform, a sputtering mechanism, and a position-adjusting mechanism, wherein the carrying platform is disposed in the chamber and has a first surface, the sputtering mechanism is disposed in the chamber and is disposed corresponding to the carrying platform, and the position-adjusting mechanism is disposed in the chamber; providing a curved substrate, wherein the curved substrate is disposed on the first surface of the carrying platform and the curved substrate has a second surface; adjusting the sputtering mechanism to different positions by the position-adjusting mechanism; and sputtering a coating material to different parts of the second surface of the curved substrate by the sputtering mechanism at the different positions.

A method for coating a curved substrate is disclosed, which includes: providing a coating device including: a chamber, a carrying platform, a sputtering mechanism, and a position-adjusting mechanism, wherein the carrying platform is disposed in the chamber and has a first surface, the sputtering mechanism is disposed in the chamber and is disposed corresponding to the carrying platform, and the position-adjusting mechanism is disposed in the chamber; providing a curved substrate, wherein the curved substrate is disposed on the first surface of the carrying platform and the curved substrate has a second surface; adjusting the sputtering mechanism to different positions by the position-adjusting mechanism; and sputtering a coating material to different parts of the second surface of the curved substrate by the sputtering mechanism at the different positions.

The present disclosure relates to the field of sensor manufacturing technology, particularly discloses a method for manufacturing a micro-sensor body, comprising the steps of S1: applying a wet colloidal material on a substrate to form a colloidal layer, and covering a layer of one-dimensional nanowire film on the surface of the colloidal layer to form a sensor embryo; S2: drying the colloidal layer of the sensor embryo to an extent that the colloidal layer cracks into a plurality of colloidal islands, a portion of the one-dimensional nanowire film contracting into a contraction diaphragm adhered to the surface of the colloidal islands while the other portion of the one-dimensional nanowire film being stretched into a connection structure connected between the adjacent contraction diaphragms. By the method for manufacturing a micro-sensor body of the present disclosure, the contraction diaphragms and connection structures formed by stretching the one-dimensional nanowire film are connected stably, which enhances the stability of the sensor devices; and the cracking manner renders it easy to obtain a large-scale of sensor bodies with connection structure arrays in stable suspension.