C23C14/34

TRANSFER CHAMBER WITH INTEGRATED SUBSTRATE PRE-PROCESS CHAMBER

A transfer chamber includes a monolithic chamber body, a transfer robot configured to pass substrates between a factory interface and a processing module in a substrate processing system, a load lock chamber station, a shutter station, a pre-clean chamber station, and a process chamber station integrated within the monolithic chamber body, and a plurality of slit valves integrated within the monolithic chamber body. The plurality of slit valves are configured to open and close the load lock chamber station, the pre-clean chamber station, and the process chamber station each from the shutter station such that the load lock chamber station, the pre-clean chamber station, and the process chamber station maintain respective vacuum pressures.

DIELECTRIC FILM AND ELECTRONIC COMPONENT

A dielectric film containing an alkaline earth metal oxide having a NaCl type crystal structure as a main component, wherein the dielectric film has a (111)-oriented columnar structure in a direction perpendicular to the surface of the dielectric film, and in a Cu—Kα X-ray diffraction chart of the dielectric film, a half width of the diffraction peak of (111) is in a range of from 0.3° to 2.0°.

VOLTAGE-NONLINEAR RESISTOR ELEMENT AND METHOD FOR PRODUCING THE SAME

A voltage-nonlinear resistor element 10 includes a voltage-nonlinear resistor (referred simply as “resistor”) 20 and a pair of electrodes 14 and 16 between which the resistor 20 is interposed. The resistor 20 has a multilayer structure including a first layer 21 composed primarily of zinc oxide, a second layer 22 composed primarily of zinc oxide, and a third layer 23 composed primarily of a metal oxide other than zinc oxide. The second layer 22 is adjacent to the first layer 21 and has a smaller thickness and a higher volume resistivity than the first layer 21. The third layer 23 is adjacent to the second layer 22.

POLYGON DEPOSITION SOURCES WITH HIGH MATERIALS UTILIZATION AND INCREASED TIME BETWEEN CHAMBER CLEANINGS
20170275762 · 2017-09-28 · ·

The present application discloses a new type of deposition source, where individual sources are placed in a substantial closed loop. The closed polygon deposition sources have no end in circumference and enable better deposition uniformity. A closed loop deposition sources minimize the edge effects in sputtering, chemical vapor deposition (CVD) and plasma enhanced chemical vapor deposition (PECVD) and increase deposition material utilization.

SILICONE AND POLYMER SUBSTRATE COMPOSITE MATERIALS, METHODS, AND USES OF THE SAME
20170246847 · 2017-08-31 ·

Composite materials and methods of producing the same are provided. In some embodiments, the composite materials can comprise a polymer substrate, an intermediary material, such as a metal or oxide, mechanically attached onto the polymer substrate, and an elastomer bonded to the polymer substrate on the side of the polymer substrate comprising the intermediary materials. The elastomer can be bonded to the polymer substrate irreversibly, where the elastomer and the polymer substrate cannot be separated at their interface without breaking either the elastomer or the polymer substrate. In some embodiments, a primer and/or an epoxy can also be used. Uses of material sputtering or sputtered materials are also provided to bond a parylene substrate and silicone elastomer, or to enhance the relative strength of the bonding between the two. In addition, composite materials, and the use thereof, involving a parylene substrate, an elastomer receptacle, and liquid silicone are provided.

SPUTTERING APPARATUS AND FILM FORMING METHOD

A sputtering apparatus includes a first target and a second target that emit sputter particles, a substrate support configured to support a substrate, and a slit plate disposed between the first and the second targets and the substrate and having a slit unit through which the sputter particles pass. The slit unit includes a first slit to the first and the second target side and a second slit to the substrate side. The second slit has a first protrusion and a second protrusion protruding toward the center of the second slit. When the slit unit is viewed from the first target, the first protrusion is hidden. When the slit unit is viewed from the second target, the second protrusion is hidden.

SHADOW MASK, FILM FORMING SYSTEM USING SHADOW MASK AND METHOD OF MANUFACTURING A DISPLAY DEVICE
20170247788 · 2017-08-31 · ·

A shadow mask includes a mask foil and a plurality of openings provided on the mask foil in accordance with a shape of at least one region where films are formed on a film forming object. The mask foil has an annular shape where first end of the mask foil and a second end of the mask foil, which is opposed to the first end of the mask foil, are connected to each other.

SHADOW MASK, FILM FORMING SYSTEM USING SHADOW MASK AND METHOD OF MANUFACTURING A DISPLAY DEVICE
20170247788 · 2017-08-31 · ·

A shadow mask includes a mask foil and a plurality of openings provided on the mask foil in accordance with a shape of at least one region where films are formed on a film forming object. The mask foil has an annular shape where first end of the mask foil and a second end of the mask foil, which is opposed to the first end of the mask foil, are connected to each other.

Coaxial microwave applicator for plasma production

The disclosure includes a coaxial microwave applicator for plasma production, including a coaxial tube formed by a central core and an outer conductor separated from the central core by an annular space allowing propagation of microwaves. The applicator includes: a cylindrical permanent magnet disposed at the end of the central core; and at least one annular permanent magnet disposed at the end of the outer conductor, all of the magnets disposed at the end of the coaxial tube having the same direction of magnetization. The magnetization of the magnets forms a magnetic field suitable for generating, in a zone away from the end of the applicator, an electronic cyclotronic resonance coupling with the electric microwave field of the applicator. The external radius and the magnetization of the annular magnet are selected such that the magnetic field lines generated by the magnets pass through the coupling zone in a direction substantially parallel to the axis of the applicator.

Apparatus for cylindrical magnetron sputtering
09748082 · 2017-08-29 · ·

A cathode target assembly for use in sputtering target material onto a substrate includes a generally cylindrical target and a magnetic array. The magnetic array is adapted to provide a plasma confinement region adjacent an outer surface of the target. End portions of the magnetic array are adapted to make the shape and strength of the confinement field at the turns of the racetrack closely match the shape and strength of the confinement field along the straight part of the racetrack so as to significantly reduce cross-corner effect.