A maintenance method for a sputtering device includes the steps of: moving a cathode carriage to take a plurality of targets and a plurality of cathodes out of a vacuum chamber; operating a plurality of cathode rotating apparatuses to rotate the targets and the cathodes so as to cause the targets to face upwards; operating a plurality of cathode sliding apparatuses to move the targets and the cathodes located in places at high height to places at low height; removing the targets from the cathodes to attach a plurality of new targets to the cathodes; returning the targets and the cathodes to an original height thereof; returning the targets and the cathodes to original rotation angles; and putting the targets and the cathodes back into the vacuum chamber.

Provided is a cylindrical sputtering target material formed of copper or a copper alloy, in which an average value of the special grain boundary length ratios Lσ.sub.N/L.sub.N which are measured with respect to the outer peripheral surfaces of both end portions and the outer peripheral surface of the center portion in an axis O direction is set to be equal to or greater than 0.5, and each measured value is in a range of ±20% with respect to the average value of the special grain boundary length ratios Lσ.sub.N/L.sub.N, and the total amount of Si and C which are impurity elements is equal to or smaller than 10 mass ppm and the amount of O is equal to or smaller than 50 mass ppm.

Provided is a cylindrical sputtering target material formed of copper or a copper alloy, in which an average value of the special grain boundary length ratios Lσ.sub.N/L.sub.N which are measured with respect to the outer peripheral surfaces of both end portions and the outer peripheral surface of the center portion in an axis O direction is set to be equal to or greater than 0.5, and each measured value is in a range of ±20% with respect to the average value of the special grain boundary length ratios Lσ.sub.N/L.sub.N, and the total amount of Si and C which are impurity elements is equal to or smaller than 10 mass ppm and the amount of O is equal to or smaller than 50 mass ppm.

Light wave separation lattices and methods of formation are provided herein. In some embodiments, a light wave separation lattice includes a first layer having the formula RO.sub.XN.sub.Y, wherein the first layer has a first refractive index; and a second layer, different from the first layer, disposed atop the first layer, and having the formula R′O.sub.XN.sub.Y, wherein the second layer has a second refractive index different from the first refractive index, and wherein R and R′ are each one of a metal or a dielectric material. In some embodiments, a method of forming a light wave separation lattice includes depositing a first layer having a predetermined desired refractive index atop a substrate by a physical vapor deposition process; and depositing a second layer, different from the first layer, atop the first layer, wherein the second layer has a predetermined second refractive index different from the first refractive index.

A sputtering target comprising a sputtering material and having a non-planar sputtering surface prior to erosion by use in a sputtering system, the non-planar sputtering surface having a circular shape and comprising a central axis region including a concave curvature feature at the central axis region. The central axis region having a wear profile after erosion by use in a sputtering system for at least 1000 kWhrs including a protuberance including a first outer circumferential wear surface having a first slope. A reference, protruding convex curvature feature for a reference target after sputtering use for the same time includes a second outer circumferential wear surface having a second slope. The protuberance provides a sputtered target having reduced shadowing relative to the reference, protruding convex curvature feature, wherein the first slope is less steep than a second slope.

A composite structure for use as a constituent of a mounting device, wherein the composite structure comprises an electrically conductive carrier, an intermediate layer comprising adhesion promoting material and being arranged on the electrically conductive carrier, and a thermally conductive and electrically insulating layer on the intermediate layer.

A composite structure for use as a constituent of a mounting device, wherein the composite structure comprises an electrically conductive carrier, an intermediate layer comprising adhesion promoting material and being arranged on the electrically conductive carrier, and a thermally conductive and electrically insulating layer on the intermediate layer.

Disclosed is a method for improving the high-temperature stability of a component, in particular a blade of a turbomachine, formed at least partially from a molybdenum alloy that, besides molybdenum, silicon, boron and titanium, comprises iron and/or yttrium. The method comprises depositing a diffusion barrier layer formed from technically pure molybdenum or tungsten or being an alloy based on molybdenum and/or tungsten at least on an outer surface, which comprises the molybdenum alloy, of the component, and depositing silicon on the diffusion barrier layer to form molybdenum silicides and/or tungsten silicides.

Disclosed is a method for improving the high-temperature stability of a component, in particular a blade of a turbomachine, formed at least partially from a molybdenum alloy that, besides molybdenum, silicon, boron and titanium, comprises iron and/or yttrium. The method comprises depositing a diffusion barrier layer formed from technically pure molybdenum or tungsten or being an alloy based on molybdenum and/or tungsten at least on an outer surface, which comprises the molybdenum alloy, of the component, and depositing silicon on the diffusion barrier layer to form molybdenum silicides and/or tungsten silicides.

Certain example embodiments relate to techniques for improving the uniformity of, and/or conformance to a desired pattern for, metal island layers (MILs) formed on a substrate (e.g., a glass or other substrate), and/or associated products. Certain example embodiments form MILs using a laser or other energy source or magnetic field assisted technique, e.g., to compensate for non-uniformities that otherwise likely would result in the MIL diverging from its desired configuration. For example, a laser or other energy source may introduce heat onto a substrate, enable pulsed laser deposition, raster a target including the MIL metal to be deposited, raster a substrate where the MIL is to be formed, etc. These and/or other techniques may be used to enable the MIL to be formed on the substrate in a desired pattern, e.g., by compensating for implicit non-uniformities of the substrate and/or by selectively creating non-uniformities in how the MIL is formed.