In a plasma processing apparatus according to an exemplary embodiment, a gas supply system supplies a gas into a processing container. A plasma source excites the gas supplied by the gas supply system. A support structure holds a processing target within the processing container. The support structure is configured to rotatably and tiltably support the processing target. The plasma processing apparatus further includes a bias power supply unit that applies a pulse-modulated DC voltage, as a bias voltage for ion attraction, to the support structure.

There is provided a semiconductor device including: a gate electrode; a channel layer arranged in a region directly below or directly above the gate electrode; a source electrode and a drain electrode arranged to be in contact with the channel layer; and a first insulating layer arranged between the gate electrode and the channel layer, the channel layer including a first oxide semiconductor, at least one of the source electrode and the drain electrode including a second oxide semiconductor, and the first oxide semiconductor and the second oxide semiconductor containing indium, tungsten and zinc. There is also provided a method for manufacturing the semiconductor device.

There is provided a semiconductor device including: a gate electrode; a channel layer arranged in a region directly below or directly above the gate electrode; a source electrode and a drain electrode arranged to be in contact with the channel layer; and a first insulating layer arranged between the gate electrode and the channel layer, the channel layer including a first oxide semiconductor, at least one of the source electrode and the drain electrode including a second oxide semiconductor, and the first oxide semiconductor and the second oxide semiconductor containing indium, tungsten and zinc. There is also provided a method for manufacturing the semiconductor device.

A problem of particle generation in an Fe-Pt-BN-based sputtering target having a high relative density is resolved by an approach different from conventional methods.

An Fe-Pt-BN-based sputtering target having a relative density of 90% or more and a Vickers hardness of 150 or less can reduce the number of particles generated during magnetron sputtering.

An apparatus has a cathode target with a cathode target outer perimeter. An inner magnet array with an inner magnet array inner perimeter is within the cathode target outer perimeter. The inner magnet array includes an inner magnet array base portion and an inner magnet array upper portion. A keeper plate assembly is connected to the inner magnet array upper portion and isolates the inner magnet array upper portion from the inner magnet array base portion. An outer magnet array is connected to a bottom surface of the keeper plate. The outer magnet array has an outer magnet array outer perimeter larger than the inner magnet array inner perimeter. The inner magnet array upper portion has a first magnetic orientation and the outer magnet array and the inner magnet array base portion have a second magnetic orientation opposite the first magnetic orientation.

A sputtering target according to this invention comprises an alloy of Al and Sc and contains from 25 at. % to 50 at. % of Sc. The sputtering target has an oxygen content of 2000 ppm by mass or less, and a variation in Vickers hardness (Hv) of 20% or less.

A sputtering target according to this invention comprises an alloy of Al and Sc and contains from 25 at. % to 50 at. % of Sc. The sputtering target has an oxygen content of 2000 ppm by mass or less, and a variation in Vickers hardness (Hv) of 20% or less.

A method for depositing a rare material in a thin layer at the surface of an horological or jewellery external part includes providing a rough part of rare material, shaping the rough part of rare material so that it is adapted to be used as a target part for a PVD method, depositing material of the target part at the surface of a substrate consisting of an horological or jewellery eternal part by a PVD method so as to cover the external part.

A method for forming a fully self-aligned via is provided. A workpiece having a pattern of features in a dielectric layer is received into a common manufacturing platform. Metal caps are deposited on the metal features, and a barrier layer is deposited on the metal caps. A first dielectric layer is added to exposed dielectric material. The barrier layer is removed and an etch stop layer is added on the exposed surfaces of the first dielectric layer and the metal caps. Additional dielectric material is added on top of the etch stop layer, then both the additional dielectric material and a portion of the etch stop layer are etched to form a feature to be filled with metal material. An integrated sequence of processing steps is executed within one or more common manufacturing platforms to provide controlled environments. Transfer modules transfer the workpiece between processing modules within and between controlled environments.

Disclosed in the present invention is an enzyme-free glucose detection chip, including: a substrate; a detection portion, disposed on an end surface of the substrate; a plurality of protrusions, disposed at the detection portion; a conductive layer, disposed on a surface of the substrate having the protrusions; and a plurality of gold nanoparticles, dispersed on surfaces of the protrusions. In the enzyme-free glucose detection chip disclosed in the present invention, protrusions having gold nanoparticles are used as electrodes, are structures on a micrometer scale and a nanometer scale, and can directly react with glucose without any glucose oxidase or/and any medium.