Disclosed is a white coating layer-formed touch screen panel. The coating layer includes a glass substrate, a white coating layers selectively formed on an edge portion of the glass substrate, a black color coating layer selectively formed on an edge portion, and a transparent conductive layer formed on the glass substrate including the edge portion.

A method of fabricating a thin film battery may comprise: depositing a first stack of blanket layers on a substrate, the first stack comprising a cathode current collector, a cathode, an electrolyte, an anode and an anode current collector; laser die patterning the first stack to form one or more second stacks, each second stack forming the core of a separate thin film battery; blanket depositing an encapsulation layer over the one or more second stacks; laser patterning the encapsulation layer to open up contact areas to the anode current collectors on each of the one or more second stacks; blanket depositing a metal pad layer over the encapsulation layer and the contact areas; and laser patterning the metal pad layer to electrically isolate the anode current collectors of each of the one or more thin film batteries. For electrically non-conductive substrates, cathode contact areas are opened-up through the substrate.

A method of fabricating a thin film battery may comprise: depositing a first stack of blanket layers on a substrate, the first stack comprising a cathode current collector, a cathode, an electrolyte, an anode and an anode current collector; laser die patterning the first stack to form one or more second stacks, each second stack forming the core of a separate thin film battery; blanket depositing an encapsulation layer over the one or more second stacks; laser patterning the encapsulation layer to open up contact areas to the anode current collectors on each of the one or more second stacks; blanket depositing a metal pad layer over the encapsulation layer and the contact areas; and laser patterning the metal pad layer to electrically isolate the anode current collectors of each of the one or more thin film batteries. For electrically non-conductive substrates, cathode contact areas are opened-up through the substrate.

Provided is a technique whereby a DLC film having a desired surface roughness and a desired film hardness can be easily formed within a short period of time while preventing cost increase so that a large quantity of boll joints, which are less expensive and yet have stable sliding characteristics, can be supplied. A method for manufacturing a ball joint provided with a ball stud that has a spherical surface section and a holder section that pivotally holds the spherical surface section, said method comprising: an intermediate underlayer-forming step for forming an intermediate underlayer, that has a fine irregular surface structure, on the surface of the spherical surface section using a sputtering method; and an amorphous hard carbon film-forming step for forming an amorphous hard carbon film, that has a root mean square roughness on the surface of 6.5-35 nm, on the intermediate underlayer using a PIG plasma film formation method.

Provided is a technique whereby a DLC film having a desired surface roughness and a desired film hardness can be easily formed within a short period of time while preventing cost increase so that a large quantity of boll joints, which are less expensive and yet have stable sliding characteristics, can be supplied. A method for manufacturing a ball joint provided with a ball stud that has a spherical surface section and a holder section that pivotally holds the spherical surface section, said method comprising: an intermediate underlayer-forming step for forming an intermediate underlayer, that has a fine irregular surface structure, on the surface of the spherical surface section using a sputtering method; and an amorphous hard carbon film-forming step for forming an amorphous hard carbon film, that has a root mean square roughness on the surface of 6.5-35 nm, on the intermediate underlayer using a PIG plasma film formation method.

Provided is a crystalline oxide semiconductor thin film comprising only bixbyite-structured In.sub.2O.sub.3 phase, suitable as a channel layer material for a thin film transistor, and having excellent etching properties in an amorphous state and a low carrier density and high carrier mobility in a crystalline state. An amorphous oxide thin film is formed using, as a target, an oxide sintered body which comprises indium, gallium, oxygen, and unavoidable impurities, the gallium content being in a range of 0.09 to 0.45 in terms of a Ga/(In+Ga) atomic ratio, has a In.sub.2O.sub.3 phase having a bixbyite structure as the main crystal phase, and has a GaInO.sub.3 phase having a β-Ga.sub.2O.sub.3-type structure, or a GaInO.sub.3 phase having a β-Ga.sub.2O.sub.3-type structure and a (Ga, In).sub.2O.sub.3 phase finely dispersed therein. The amorphous oxide thin film is finely processed by performing etching using photolithography, and is annealed.

Provided are a thin film for optical element as a single-layer thin film which contains a Si simple substance, a Si compound excluding Si alloy, and a metal or metal compound, a method of manufacturing the thin film for optical element, and an optical element including the thin film for optical element. Further provided are an inorganic polarizing plate including a reflection suppressing layer composed of the thin film for optical element, a method of manufacturing the inorganic polarizing plate, and an optical device including the inorganic polarizing plate.

Provided are a thin film for optical element as a single-layer thin film which contains a Si simple substance, a Si compound excluding Si alloy, and a metal or metal compound, a method of manufacturing the thin film for optical element, and an optical element including the thin film for optical element. Further provided are an inorganic polarizing plate including a reflection suppressing layer composed of the thin film for optical element, a method of manufacturing the inorganic polarizing plate, and an optical device including the inorganic polarizing plate.

Implementations described herein provide a pedestal lift assembly for a plasma processing chamber and a method for using the same. The pedestal lift assembly has a platen configured to couple a shaft of a pedestal disposed in the plasma processing chamber. An absolute linear encoder is coupled to a fixed frame wherein the absolute linear encoder is configured to detect incremental movement of the platen. A lift rod is attached to the platen. A motor rotor encoder brake module (MRBEM) is coupled to the fixed frame and moveably coupled to the lift rod, the motor encoder brake module configured to move the lift rod in a first direction and a second direction, wherein the movement of the lift rod results in the platen traveling vertically relative to the fixed frame.

Implementations described herein provide a pedestal lift assembly for a plasma processing chamber and a method for using the same. The pedestal lift assembly has a platen configured to couple a shaft of a pedestal disposed in the plasma processing chamber. An absolute linear encoder is coupled to a fixed frame wherein the absolute linear encoder is configured to detect incremental movement of the platen. A lift rod is attached to the platen. A motor rotor encoder brake module (MRBEM) is coupled to the fixed frame and moveably coupled to the lift rod, the motor encoder brake module configured to move the lift rod in a first direction and a second direction, wherein the movement of the lift rod results in the platen traveling vertically relative to the fixed frame.