A stage device for holding a substrate in a processing apparatus for processing the substrate includes a stage, a stage rotating mechanism, and a cold heat transfer mechanism. The stage is configured to hold the substrate in a processing chamber. The stage rotating mechanism includes a rotation shaft extending downward from a center of a bottom surface of the stage and a motor configured to rotate the stage via the rotation shaft. The cold heat transfer mechanism includes at least one cold heat transfer body that is fixedly disposed at a position spaced away from the rotation shaft below the stage and is configured to transfer cold heat of a chiller. The cold heat transfer mechanism is disposed with a gap between the cold heat transfer mechanism and the stage.

A stage device for holding a substrate in a processing apparatus for processing the substrate includes a stage, a stage rotating mechanism, and a cold heat transfer mechanism. The stage is configured to hold the substrate in a processing chamber. The stage rotating mechanism includes a rotation shaft extending downward from a center of a bottom surface of the stage and a motor configured to rotate the stage via the rotation shaft. The cold heat transfer mechanism includes at least one cold heat transfer body that is fixedly disposed at a position spaced away from the rotation shaft below the stage and is configured to transfer cold heat of a chiller. The cold heat transfer mechanism is disposed with a gap between the cold heat transfer mechanism and the stage.

A system and method for refurbishing an internal surface of an article of manufacture includes a sputtering unit. The internal surface of the article of manufacture defines an internal cavity. The sputtering unit includes an electrode assembly coupled to a sealing portion. The refurbishing method begins with preparing the internal surface to remove physical damage and contamination. Next, the sputtering unit is interfaced with the article by extending the electrode assembly into the cavity and sealing the sputtering unit to the article with the sealing portion. The internal surface of the article then defines a boundary of a sputtering chamber. A dimensional value is provided that is related to an internal dimension of the cavity. Finally the sputtering unit is operated to deposit material onto the internal surface based upon the provided dimensional value.

A system and method for refurbishing an internal surface of an article of manufacture includes a sputtering unit. The internal surface of the article of manufacture defines an internal cavity. The sputtering unit includes an electrode assembly coupled to a sealing portion. The refurbishing method begins with preparing the internal surface to remove physical damage and contamination. Next, the sputtering unit is interfaced with the article by extending the electrode assembly into the cavity and sealing the sputtering unit to the article with the sealing portion. The internal surface of the article then defines a boundary of a sputtering chamber. A dimensional value is provided that is related to an internal dimension of the cavity. Finally the sputtering unit is operated to deposit material onto the internal surface based upon the provided dimensional value.

Embodiments generally relate to a chamber component to be used in plasma processing chambers for semiconductor or display processing. In one embodiment, a chamber component includes a textured surface having a surface roughness ranging from about 150 microinches to about 450 microinches and a coating layer disposed on the textured surface. The coating layer may be a silicon layer having a purity ranging from about 90 weight percent to about 99 weight percent, a thickness ranging from about 50 microns to about 500 microns, and an electrical resistivity ranging from about 1 E-3 ohm*m to about 1 E3 ohm*m. The coating layer provides strong adhesion for materials deposited in the plasma processing chamber, which reduces the materials peeling from the chamber component. The coating layer also enables oxygen plasma cleaning for further reducing materials deposited on the chamber component and provides the protection of the textured surface located therebelow.

The present invention relates to sputter targets for electrochemical device layer deposition comprising a lithium-containing target material with near-metallic electrical conductivity which includes (a) at least one metal and (b) a lithium-containing material, the lithium-containing material being selected from the group consisting of lithium metal and a lithium-containing salt, wherein the at least one metal and the lithium-containing material are formed into the lithium-containing target material and wherein the lithium-containing target material is configured with a composition sufficient for physical vapor deposition of a lithium-containing electrode of the electrochemical device in a single step, the lithium-containing electrode as deposited requiring no further lithium doping. Furthermore, the composition of the metallic lithium-containing target material may be configured to provide a low enough electrical resistance to permit DC sputtering. Chambers and tools including the sputter target and process flows for fabricating electrochemical devices including steps utilizing the sputter target are also described.

The present invention provides strategies for making high quality CIGS photoabsorbing materials from precursor films that incorporate a sub-stoichiometric amount of chalcogen(s). Chalcogen(s) are incorporated into the CIGS precursor film via co-sputtering with one or more other constituents of the precursor. Optional annealing also may be practiced to convert precursor into more desirable chalcopyrite crystalline form in event all or a portion of the precursor has another constitution. The resultant precursors generally are sub-stoichiometric with respect to chalcogen and have very poor electronic characteristics. The conversion of these precursors into CIGS photoabsorbing material via chalcogenizing treatment occurs with dramatically reduced interfacial void content. The resultant CIGS material displays excellent adhesion to other layers in the resultant photovoltaic devices. Ga migration also is dramatically reduced, and the resultant films have optimized Ga profiles in the top or bottom portion of the film that improve the quality of photovoltaic devices made using the films.

The present invention relates to a method for producing a neutron converter from boron carbide or a boron film on a neutron transparent metal substrate. The neutron transparent metal substrate is polished in a first step by fine grinding and coated in a further step by means of sputtering with boron carbide or a boron film. An adhesion promoting layer is optionally applied between the metal substrate and below the boron or boron carbide layer. The coatings obtained have a high homogeneity in layer thickness, chemical composition and isotope ratio as well as a low level of impurities such as oxygen or nitrogen.

The present invention relates to a method for producing a neutron converter from boron carbide or a boron film on a neutron transparent metal substrate. The neutron transparent metal substrate is polished in a first step by fine grinding and coated in a further step by means of sputtering with boron carbide or a boron film. An adhesion promoting layer is optionally applied between the metal substrate and below the boron or boron carbide layer. The coatings obtained have a high homogeneity in layer thickness, chemical composition and isotope ratio as well as a low level of impurities such as oxygen or nitrogen.

A metallization for a thin-film component includes at least one layer composed of an Mo-based alloy containing Al and Ti and usual impurities. A process for producing a metallization includes providing at least one sputtering target, depositing at least one layer of an Mo-based alloy containing Al and Ti and usual impurities, and structuring the metallization by using at least one photolithographic process and at least one subsequent etching step. A sputtering target is composed of an Mo-based alloy containing Al and Ti and usual impurities. A process for producing a sputtering target composed of an Mo-based alloy includes providing a powder mixture containing Mo and also Al and Ti and cold gas spraying (CGS) of the powder mixture onto a suitable support material.