A method of controlling a reactive deposition process and a corresponding assembly and/or apparatus are described. The method includes providing power to a cathode with a power supply, providing a voltage set point to the power supply, receiving a power value correlating the power provided to the cathode, and controlling a flow of a process gas in dependence of the power value to provide a closed loop control for the power value.

An indium sputtering target with a short time to attain a stable film deposition rate once sputtering has begun is provided. An indium sputtering target having a surface to be sputtered with an arithmetic average roughness Ra of from 5 μm to 70 μm prior to sputtering.

A fluorine plasma resistant coating on a substrate being a component in a semiconductor manufacturing system is disclosed. In one embodiment the composition includes an AlON coating that overlies a substrate, and an optional yttria coating layer that overlies the AlON coating, with a total coating thickness of about 5-6 microns.

A sputtering target having a one-piece top coat comprising a mixture of oxides of zinc, tin, and optionally gallium, characterized in that said one-piece top coat has a length of at least 80 cm; a method for forming such a sputtering target and the use of such a target for forming films.

A sputtering target having a one-piece top coat comprising a mixture of oxides of zinc, tin, and optionally gallium, characterized in that said one-piece top coat has a length of at least 80 cm; a method for forming such a sputtering target and the use of such a target for forming films.

A sliding element for use in an internal combustion engine may include a ferrous base having a peripheral sliding surface covered by a protective surface layer, the protective surface layer including at least one nitride applied via at least one of physical vapour deposition and a nitrided layer. The peripheral sliding surface may have a diamond like carbon (DLC) coating disposed thereon. The coating may include at least one of (a) one or more transition layers composed of WC1-x and (b) an adhesive layer of metallic chromium with a crystal structure. The coating may include an intermediate layer of metal DLC, the metal may be tungsten in a multilayer structure of a-C:H:W and a-C:H, and an outer layer of metal-free DLC.

A magnetic material sputtering target characterized in that, in a plane for observing the oxide in the target, oxide grains in the target have an average diameter of 1.5 μm or less, and that 60% or more of the oxide grains in the observing plane of the target have a difference between a maximum diameter and a minimum diameter of 0.4 μm or less, where the maximum diameter is a maximum distance between arbitrary two points on the periphery of an oxide grain, and the minimum diameter is a minimum distance between two parallel lines across the oxide grain. A non-magnetic grain dispersion-type magnetic material sputtering target that can inhibit abnormal discharge due to an oxide causing occurrence of particles during sputtering is obtained.

Provided are an indium cylindrical sputtering target capable of providing good film thickness distribution and a method for production thereof. The indium cylindrical target comprises crystal grains whose average size is 1 mm to 20 mm over its surface to be sputtered. The method for manufacturing the indium cylindrical target includes the steps of: casting a semi-finished product of an indium cylindrical target integrated with a backing tube; and subjecting the semi-finished product to plastic working in its radial direction, wherein the plastic working is performed with a total thickness reduction rate of at least 10% over its longitudinal direction.

Embodiments relate generally to semiconductor device fabrication and processes, and more particularly, to systems and methods that implement magnetic field generators configured to generate rotating magnetic fields to facilitate physical vapor deposition (“PVD”). In one embodiment, a system generates a first portion of a magnetic field adjacent a first circumferential portion of a substrate, and can generate a second portion of the magnetic field adjacent to a second circumferential portion of the substrate. The second circumferential portion is disposed at an endpoint of a diameter that passes through an axis of rotation to another endpoint of the diameter at which the first circumferential portion resides. The second peak magnitude can be less than the first peak magnitude. The system rotates the first and second portions of the magnetic fields to decompose a target material to form a plasma adjacent the substrate. The system forms a film upon the substrate.

The present invention is to provide a deposition device capable of coping with a size change of a substrate only by replacing a magnet unit and a target material. A deposition device (1) of the present invention is to perform deposition onto a surface of a substrate W to be conveyed by using an evaporation source (2) facing a front surface of the substrate (W), and the evaporation source (2) has a target material (7), a backing plate (8), a magnet unit (9), a cathode body (10), and a cooling water flow passage (12). The cooling water flow passage (12) is a space formed by separating the magnet unit (9) and the backing plate (8), and the cooling water can be distributed through this space. As the magnet unit (9), a short magnet unit can be arranged in correspondence with a narrow-width substrate having narrower width than that of the substrate (W), and as the target material (7), a short target material is arranged in correspondence with width of the arrange magnet unit (9).