A production method for a glass roll includes a start preparation step (S1) of feeding-out a first lead film (LF1) coupled to a starting end portion (GFa) of a first glass film (GF1) from an unwinding device (3) and allowing a winding device (8) to wind the first lead film (LF1 after passing of the first lead film (LF1) through a thermal film-forming device (4),). The start preparation step (S1) includes a temperature increasing step of causing the thermal film-forming device (4) to be increased in temperature to a film-forming temperature. The first glass film (GF1) reaches the thermal film-forming device (4) before the thermal film-forming device (4) is increased in temperature to the film-forming temperature.

A production method for a glass roll includes a start preparation step (S1) of feeding-out a first lead film (LF1) coupled to a starting end portion (GFa) of a first glass film (GF1) from an unwinding device (3) and allowing a winding device (8) to wind the first lead film (LF1 after passing of the first lead film (LF1) through a thermal film-forming device (4),). The start preparation step (S1) includes a temperature increasing step of causing the thermal film-forming device (4) to be increased in temperature to a film-forming temperature. The first glass film (GF1) reaches the thermal film-forming device (4) before the thermal film-forming device (4) is increased in temperature to the film-forming temperature.

A substrate processing module includes a transfer chamber, an array of processing stations, at least one shutter disk assembly, and a substrate handling device. The array of processing stations is disposed within a transfer volume, and each of the processing stations within the array are configured to selectively process at least one substrate. The shutter disk assembly includes an actuator and a disk blade configured to support a shutter disk coupled thereto. The shutter disk is rotatable between a first position and a second position. In the first position, the disk blade is disposed between two of the plurality of processing stations. In the second position, the disk blade is located under one of the processing stations within the array. The substrate handling device is disposed centrally within the transfer volume and includes a plurality of arms each configured to support and position a substrate.

A mounting table structure includes a mounting table on which a substrate is mounted, a refrigerating mechanism configured to cool the substrate, an elevating drive part configured to move the mounting table or the refrigerating mechanism up and down, and at least one contact provided at a position between the refrigerating mechanism and the mounting table which face each other. The refrigerating mechanism and the mounting table are allowed to be brought into contact with each other via the contact by moving the mounting table or the refrigerating mechanism up and down by the elevating drive part.

A mounting table structure includes a mounting table on which a substrate is mounted, a refrigerating mechanism configured to cool the substrate, an elevating drive part configured to move the mounting table or the refrigerating mechanism up and down, and at least one contact provided at a position between the refrigerating mechanism and the mounting table which face each other. The refrigerating mechanism and the mounting table are allowed to be brought into contact with each other via the contact by moving the mounting table or the refrigerating mechanism up and down by the elevating drive part.

A negative thermal expansion material and a preparation method thereof, and a negative thermal expansion film and a preparation method thereof are provided. The negative thermal expansion material includes Eu.sub.0.85Cu.sub.0.15MnO.sub.3-δ, wherein 0≤δ≤2.

Sputtering systems and methods are provided. In an embodiment, a sputtering system includes a chamber configured to receive a substrate, a sputtering target positioned within the chamber, and an electromagnet array over the sputtering target. The electromagnet array includes a plurality of electromagnets.

A sputtering system may include a substrate. The sputtering system may include at least one target. The at least one target may include at least one coating material to coat at least one layer onto the substrate. The at least one coating material may be sputtered onto the substrate in a presence of an inert gas. The inert gas may include argon gas and helium gas.

A sputtering system may include a substrate. The sputtering system may include at least one target. The at least one target may include at least one coating material to coat at least one layer onto the substrate. The at least one coating material may be sputtered onto the substrate in a presence of an inert gas. The inert gas may include argon gas and helium gas.

Disclosed are an aluminum-scandium alloy target with high scandium content and a preparation method thereof. The method comprises: preparing aluminum and scandium; melting the scandium; mixing the aluminum into the scandium, smelting and cooling to obtain an aluminum-scandium alloy through a plurality of cycles; ball-milling the alloy to obtain alloy powder and drying in vacuum, then pre-pressing and sintering in vacuum to obtain an aluminum-scandium alloy target billet; performing a thermal deformation process on the target billet to obtain the target, comprising hot forging, hot rolling and finish machining. In the present disclosure, the target has more uniform structure and chemical composition, higher relative density (up to 99.0% or more), finer grain size and higher ductility; reduce defects of shrinkage cavity and porosity, save material cost, solve problem of alloys with high brittleness, unable to process targets, meeting the requirements on wiring materials for large-scale integrated circuits.