A method of manufacturing a device useable in DNA or genome sequencing comprises disposing pairs of electrodes on a substrate, the electrodes within each pair separated by a nanogap; depositing a resist layer over the electrodes; patterning the resist layer to create an exposed region on each electrode at or near each nanogap; roughening the electrode surface within each exposed region using various methods; and exposing the exposed regions to biomolecules, wherein one biomolecule bridges each nanogap of each electrode pair, with each end of each biomolecule bound to the electrodes at each exposed region.

A method of manufacturing a device useable in DNA or genome sequencing comprises disposing pairs of electrodes on a substrate, the electrodes within each pair separated by a nanogap; depositing a resist layer over the electrodes; patterning the resist layer to create an exposed region on each electrode at or near each nanogap; roughening the electrode surface within each exposed region using various methods; and exposing the exposed regions to biomolecules, wherein one biomolecule bridges each nanogap of each electrode pair, with each end of each biomolecule bound to the electrodes at each exposed region.

An IHC ion source having increased plasma potential is disclosed. In certain embodiments, the extraction plate is biased at a higher voltage than the body of the arc chamber to achieve the higher plasma potential. Shielding electrodes may be utilized to remove the interaction between the biased extraction plate and the plasma. The cross-section of the arc chamber may be circular or nearly circular to facilitate the rotation of electrons in the chamber. In another embodiment, biased electrodes may be disposed in the chamber on opposite sides of the extraction aperture in the height direction. In some embodiments, only one of the electrodes is biased at a voltage greater than the body of the arc chamber.

An IHC ion source having increased plasma potential is disclosed. In certain embodiments, the extraction plate is biased at a higher voltage than the body of the arc chamber to achieve the higher plasma potential. Shielding electrodes may be utilized to remove the interaction between the biased extraction plate and the plasma. The cross-section of the arc chamber may be circular or nearly circular to facilitate the rotation of electrons in the chamber. In another embodiment, biased electrodes may be disposed in the chamber on opposite sides of the extraction aperture in the height direction. In some embodiments, only one of the electrodes is biased at a voltage greater than the body of the arc chamber.

A system comprising a spinning disk is disclosed. The system comprises a semiconductor processing system, such as a high energy implantation system. The semiconductor processing system produces a spot ion beam, which is directed to a plurality of workpieces, which are disposed on the spinning disk. The spinning disk comprises a rotating central hub with a plurality of platens. The plurality of platens may extend outward from the central hub and workpieces are electrostatically clamped to the platens. The plurality of platens may also be capable of rotation. The central hub also controls the rotation of each of the platens about an axis orthogonal to the rotation axis of the central hub. In this way, variable angle implants may be performed. Additionally, this allows the workpieces to be mounted while in a horizontal orientation.

A system comprising a spinning disk is disclosed. The system comprises a semiconductor processing system, such as a high energy implantation system. The semiconductor processing system produces a spot ion beam, which is directed to a plurality of workpieces, which are disposed on the spinning disk. The spinning disk comprises a rotating central hub with a plurality of platens. The plurality of platens may extend outward from the central hub and workpieces are electrostatically clamped to the platens. The plurality of platens may also be capable of rotation. The central hub also controls the rotation of each of the platens about an axis orthogonal to the rotation axis of the central hub. In this way, variable angle implants may be performed. Additionally, this allows the workpieces to be mounted while in a horizontal orientation.

An optical element (200), has a first surface configured to convey light, a second surface configured to convey light, an optical path between the first surface and the second surface, a filter coating (230) applied to the first surface, and a colour corrected anti-reflection (AR) coating (240) with colour correcting and antireflection characteristics applied to the second surface. The AR coating is configured according to an antireflective function to maximise photopic transmission and/or, integrated visual photopic transmission (IVPT) of the optical path. The second surface is disposed opposite the first surface, and the antireflective function is determined according to a daylight emission a I(λ), a transmission spectrum of the antireflection/colour corrective coating T(λ) and a thickness a d(λ), of the film for a specified wavelength.

An optical element (200), has a first surface configured to convey light, a second surface configured to convey light, an optical path between the first surface and the second surface, a filter coating (230) applied to the first surface, and a colour corrected anti-reflection (AR) coating (240) with colour correcting and antireflection characteristics applied to the second surface. The AR coating is configured according to an antireflective function to maximise photopic transmission and/or, integrated visual photopic transmission (IVPT) of the optical path. The second surface is disposed opposite the first surface, and the antireflective function is determined according to a daylight emission a I(λ), a transmission spectrum of the antireflection/colour corrective coating T(λ) and a thickness a d(λ), of the film for a specified wavelength.

Systems and methods for strengthening a sapphire part are described herein. One embodiment may take the form of a method including orienting a first surface of a sapphire member relative to an ion implantation device and performing a first implantation step. The implanting step may include directing ions at the first surface of the sapphire member to embed them under the first surface. The systems and methods may also include one or more of heating the sapphire member to diffuse the implanted ions into deeper layers of sapphire member, cooling the sapphire member, and performing at least a second implantation step directing ions at the first surface of the sapphire member to embed the ions under the first surface.

Systems and methods for strengthening a sapphire part are described herein. One embodiment may take the form of a method including orienting a first surface of a sapphire member relative to an ion implantation device and performing a first implantation step. The implanting step may include directing ions at the first surface of the sapphire member to embed them under the first surface. The systems and methods may also include one or more of heating the sapphire member to diffuse the implanted ions into deeper layers of sapphire member, cooling the sapphire member, and performing at least a second implantation step directing ions at the first surface of the sapphire member to embed the ions under the first surface.